Patent classifications
H10W70/635
Double-sided redistribution layer (RDL) substrate for passive and device integration
A device includes a redistribution layer (RDL) substrate. The device also includes a passive component in the RDL substrate proximate a first surface of the RDL substrate. The device further includes a first die coupled to a second surface of the RDL substrate, opposite the first surface of the RDL substrate.
Liquid metal interconnect for modular system on an interconnect server architecture
An electronic system and associated methods are disclosed. In one example, the electronic system includes a processor package including at least one processor integrated circuit (IC); an interposer including electrically conductive interposer interconnect; a first liquid metal well array including multiple liquid metal wells arranged between the processor package and the interposer, wherein the first liquid metal well array is attached to a surface of the processor package and attached to a first surface of the interposer and the interposer interconnect; a printed circuit board (PCB) attached to a second surface of the interposer and the interposer interconnect; a second liquid metal well array including a first surface attached to the first surface of the interposer and the interposer interconnect; and a first companion component package attached to a second surface of the second liquid metal well array.
Semiconductor package and manufacturing method thereof
A semiconductor package includes a semiconductor die, a device layer over the semiconductor die and including an optical device, an insulator layer over the device layer, a buffer layer over the insulator layer, an etch stop layer between the device layer and the insulator layer, a connective terminal, and a bonding via passing through the device layer and electrically connecting the semiconductor die to the connective terminal. The conductive terminal passes through the etch stop layer, the insulator layer, and the buffer layer. The conductive terminal is in direct contact with the etch stop layer.
Electronic package including leadframe for power transmission
An electronic package is provided. The electronic package includes an electronic component and a leadframe. The electronic component has a passive surface. The leadframe includes a first patterned part under the electronic component and configured to provide a power to the electronic component by the passive surface.
Semiconductor package device
Disclosed is a semiconductor package device comprising a lower redistribution substrate, a first semiconductor chip on the lower redistribution substrate, vertical structures on the lower redistribution substrate, and a first molding member on the lower redistribution substrate and on the first semiconductor chip and the vertical structures. The vertical structure includes a first post having a first diameter, a second post on the first post and having a second diameter, and a bonding pad on the second post opposite the first post and having a third diameter. The first, second, and third diameters are different from each other. The third diameter is greater than the second diameter.
Method of transferring heat from ungrounded electronic components
A method for manufacturing an electronic package comprises providing at least one electronic component, the at least one electronic component including at least one non-groundable thermal output, providing a substrate in which a ground plane is enclosed in or supported by the substrate, defining at least one thermally conductive pathway extending between an interface exposed on the substrate and the ground plane such that the interface is electrically isolated from the ground plane, and mounting the electronic component to the substrate, the mounting including thermally coupling the output to the interface with at least one thermally conductive member.
Laser ablation system for package fabrication
The present disclosure relates to systems and methods for fabricating semiconductor packages, and more particularly, for forming features in semiconductor packages by laser ablation. In one embodiment, the laser systems and methods described herein can be utilized to pattern a substrate to be utilized as a package frame for a semiconductor package having one or more interconnections formed therethrough and/or one or more semiconductor dies disposed therein. The laser systems described herein can produce tunable laser beams for forming features in a substrate or other package structure. Specifically, frequency, pulse width, pulse shape, and pulse energy of laser beams are tunable based on desired sizes of patterned features and on the material in which the patterned features are formed. The adjustability of the laser beams enables rapid and accurate formation of features in semiconductor substrates and packages with controlled depth and topography.
Micro heat pipe for use in semiconductor IC chip package
A micro heat transfer component includes a bottom metal plate; a top metal plate; a plurality of sidewalls each having a top end joining the top metal plate and a bottom end joining the bottom metal plate, wherein the top and bottom metal plates and the sidewalls form a chamber in the micro heat transfer component; a plurality of metal posts in the chamber and between the top and bottom metal plates, wherein each of the metal posts has a top end joining the top metal plate and a bottom end joining the bottom metal plate; a metal layer in the chamber, between the top and bottom metal plates and intersecting each of the metal posts, wherein a plurality of openings are in the metal layer, wherein a first space in the chamber is between the metal layer and bottom metal plate and a second space in the chamber is between the metal layer and top metal plate; and a liquid in the first space in the chamber.
STRUCTURE AND FORMATION METHOD OF INTEGRATED CHIPS PACKAGE WITH THERMAL CONDUCTIVE ELEMENT
A package structure and a formation method are provided. The method includes forming multiple patterned material elements over a carrier substrate, and the patterned material elements are more thermal conductive than copper. The method also includes forming a protective layer laterally surrounding each of the patterned material elements. The method further includes bonding a chip-containing structure to a first patterned material element of the patterned material elements through dielectric-to-dielectric bonding and metal-to-metal bonding.
INTERCONNECT BOARD WITH ELECTRONIC COMPONENT EMBEDDED IN THERMALLY ENHANCED CAVITY SUBSTRATE
An interconnect board includes a thermally enhanced cavity substrate, an electronic component, a crack-inhibiting dielectric layer and a circuitry layer. The cavity in the thermally enhanced cavity substrate is defined by a heat conduction surface of a first conductive island and inner surrounding sidewalls of a stress-relief resin layer. The thermally enhanced cavity substrate further includes electrically conductive posts as vertical electrical conduction channel. The electronic component in the cavity is attached onto the heat conduction surface and covered and laterally surrounded by the crack-inhibiting dielectric layer. The circuitry layer can provide electrical connections between the electronic component and the electrically conductive posts. For applications involving electrical components with high thermal demand (such as power chips), the first conductive island may further include a metallized segment in contact with the bottom surface of the electronic component to improve thermal management.