A power module (10) includes a power semiconductor chip (1) and a Cu circuit (3) having the power semiconductor chip (1) provided on one surface. The power module (10) includes: a sintering layer (2) joining the power semiconductor chip (1) and the Cu circuit (3) by using a sintering paste; and a heat dissipation sheet (4) provided for joining a Cu base plate (5) to the other surface of the Cu circuit (3), in which in a first laminated structure in which the power semiconductor chip (1), the sintering layer (2), the Cu circuit (3), and the heat dissipation sheet (4) are laminated, the total thermal resistance XA in the direction of lamination is equal to or less than 0.30 (K/W).

A composite component containing one or more electronic components. The composite component includes a Si base layer having a first main surface, and a second main surface facing the first main surface, a redistribution layer disposed on the first main surface, a through-Si via extending through the Si base layer and the adhesive layer to electrically connect the redistribution layer and the electronic component, and extending through the Si base layer, an electronic component electrically connected to the through-Si via, and disposed on the second main surface, sidewall portions surrounding the electronic component, and disposed to form a recessed portion together with the Si base layer, and a resin sealing portion sealing the electronic component.

Provided is a semiconductor device in which a bonding state between a bonding object and a terminal is improved. The semiconductor device includes a bonding object, a case, and a terminal. The bonding object includes a metal pattern. The case includes a frame body and accommodates the bonding object inside the frame body. The terminal includes a first end and a second end. The first end is bonded to the metal pattern of the bonding object. The second end is led out of the case from the first end. The bonding object is an insulating substrate or a semiconductor element held on an insulating substrate. The case includes a beam bridging across a space inside frame body. The beam holds a portion of the terminal between the first end and the second end.

A chip is assembled on an interconnection substrate. A heat dissipation layer made of a thermal interface material is deposited on the chip. A cap is bonded to the substrate with the cap covering the chip and the heat dissipation layer contacting with the cap. An element made of an adhesive material or a solderable material is formed on the chip prior to depositing the heat dissipation layer, or formed on the cap prior to bonding the cap. The element is thus in contact with the cap and with the chip and positioned next to the heat dissipation layer.

A semiconductor module comprises a metallic sheet comprising a first surface. The semiconductor module further comprises a semiconductor die coupled to the first surface of the metallic sheet. An electrically insulative housing comprises a circumferential frame, wherein the electrically insulative housing encloses the semiconductor die and at least a part of the first surface of the metallic sheet. Furthermore, a joining section of the circumferential frame is directly joined to the first surface of the metallic sheet, wherein an electrically inducible element is enclosed near the joining section of the circumferential frame.

In one example, an electronic device, comprises a substrate comprising a dielectric structure and a conductive structure, an electronic component over a top side of the substrate, wherein the electronic component is coupled with the conductive structure; an encapsulant over the top side of the substrate and contacting a lateral side of the electronic component, wherein the encapsulant comprises a first trench on a top side of the encapsulant adjacent to the electronic component, a lid over the top side of the encapsulant and covering the electronic component; and an interface material between the top side of the encapsulant and the lid, and in the first trench. Other examples and related methods are also disclosed herein.

In one example, an electronic device, comprises a substrate comprising a dielectric structure and a conductive structure, an electronic component over a top side of the substrate, wherein the electronic component is coupled with the conductive structure; an encapsulant over the top side of the substrate and contacting a lateral side of the electronic component, wherein the encapsulant comprises a first trench on a top side of the encapsulant adjacent to the electronic component, a lid over the top side of the encapsulant and covering the electronic component; and an interface material between the top side of the encapsulant and the lid, and in the first trench. Other examples and related methods are also disclosed herein.

Many electronic devices generate significant amounts of heat during operation, especially those configured for high-performance computing often used to support machine learning/artificial intelligence (ML/AI) applications. However, operating electronic devices at increased temperatures can negatively impact their performance. While it is now common for integrated circuit packages to include a lid that can be coupled to a cooling plate providing heat dissipation, the lid is currently fabricated from copper metal which limits thermal conductivity and thus the ability to provide heat dissipation for the underlying integrated circuit. The present disclosure provide a diamond-based lid for an integrated circuit package, which can provide higher thermal conductivity than the existing copper lids.

A flip-chip bonding-based antenna packaging structure and its manufacturing method are provided. The flip-chip bonding-based antenna packaging structure includes a lead frame structure and a redistribution structure disposed above the lead frame structure. The redistribution structure includes a first surface and a second surface. The lead frame structure is disposed on the redistribution structure and includes a metal member, a first active element, and a passive element. The metal member includes a base portion, a first supporting portion on the base portion, and an extension portion adjacent to the first supporting portion. The extension portion extends from the base portion, and the first supporting portion is parallel to the extension portion. The first active element is disposed between the first supporting portion and the first surface. The passive element is disposed on the second surface and is electrically connected to the first active element.

A semiconductor device includes a circuit substrate, a semiconductor package, connective terminals and supports. The circuit substrate has a first side and a second side opposite to the first side. The semiconductor package is connected to the first side of the circuit substrate. The connective terminals are located on the second side of the circuit substrate and are electrically connected to the semiconductor package via the circuit substrate. The supports are located on the second side of the circuit substrate beside the connective terminals. A material of the supports has a melting temperature higher than a melting temperature of the connective terminals.