Power semiconductor device packages are provided. In one example, a power semiconductor device package includes a housing, a first semiconductor die and a second semiconductor die, and a plurality of electrical leads extending from the housing. At least one electrical lead of the plurality of electrical leads may be coupled to each of the first semiconductor die and the second semiconductor die. The second semiconductor die may be a different type of semiconductor device relative to the first semiconductor die. In one example, the power semiconductor device package includes a creepage cutout in the housing that provides a creepage distance between at least two electrical leads of the plurality of electrical leads.

A thermal interface film is used between a semiconductor die and a heat sink. The thermal interface film includes at least two layers, a first layer with vertically oriented graphite and a second layer with horizontally oriented graphite. The thermal interface film directs heat away from the semiconductor die both upwards and outwards, spreading the heat over a larger surface area more quickly.

A package comprising a substrate, a first integrated device coupled to a first surface of the substrate, a lid structure coupled to the substrate, where the lid structure includes a first compartment comprising a side surface and an inner top surface, and a thermal interface material coupled to (i) the first integrated device and (ii) the side surface and the inner top surface of the first compartment of the lid structure. The substrate includes at least one dielectric layer and a plurality of interconnects.

Assemblies and methods of manufacturing assemblies that include sockets and packaged semiconductor chips are provided. The packages for the semiconductor chips can include cores that are formed from a solid amorphous glass layer.

An integrated device package includes a substrate and a die coupled to the substrate. The integrated device package also includes a thermal interface material coupled to the die, and a lid coupled to the substrate and to the thermal interface material. The lid includes a unitary body that includes one or more openings that define a die contact area of the unitary body and one or more compliant members of the unitary body.

An electronic device includes a semiconductor die having a side, and a cap including a first portion spaced apart from the side of the semiconductor die to define a cavity over a portion of the side of the semiconductor die, and a second portion attached to the side of the semiconductor die and extending from the side of the semiconductor die to the first portion, wherein one of the first and second portions has an opening.

A package structure according to the present disclosure includes a package substrate, an interposer bonded to the package substrate, a first die and a second die bonded to the interposer by way of micro bumps, an underfill surrounding the micro bumps, disposed between the first die and the interposer as well as between the second die and the interposer, a metal layer interfacing the interposer, the underfill, sidewalls of the first die, and sidewalls of the second die, a molding material over the metal layer, and a thermal interface material disposed over the molding material, the metal layer, the first die, and the second die.

A terminal structure includes a pair of plate sections including first and second plate sections respectively provided spaced apart from each other in a thickness direction of the nut, a connection plate section extending in the thickness direction of the nut and connects respective one ends of the pair of plate sections to each other, a terminal section protruding from the other end of the first plate section of the pair of plate sections and faces the connection plate section, and a holding section provided at at least one of the connection plate section or the terminal section, and restricting rotation of the nut and movement of the nut in a direction intersecting the thickness direction. The pair of plate sections, the connection plate section, the terminal section, and the holding section are constituted by one plate-shaped body.

The present application discloses a support bracing structure, a semiconductor device with the support bracing structure, and a method for fabricating the semiconductor device with the support bracing structure. The support bracing structure includes a first bracing layer including two connection portions respectively positioned on top surfaces of two adjacent bottom electrodes, and a frame portion bridging the two connection portions; and a protection layer including a first portion positioned on and conforming to an inner surface of the frame portion and positioned between the two connection portions. The inner surface of the frame portion is normal to the top surfaces of the two adjacent bottom electrodes.

The present application discloses a support bracing structure, a semiconductor device with the support bracing structure, and a method for fabricating the semiconductor device with the support bracing structure. The support bracing structure includes a first bracing layer including two connection portions respectively positioned on top surfaces of two adjacent bottom electrodes, and a frame portion bridging the two connection portions; and a protection layer including a first portion positioned on and conforming to an inner surface of the frame portion and positioned between the two connection portions. The inner surface of the frame portion is normal to the top surfaces of the two adjacent bottom electrodes.