Provided are a semiconductor photoresist composition including an organometallic compound; a salt compound including an anion represented by Chemical Formula 1; and a solvent, and a method of forming patterns using the same. The details of Chemical Formula 1 are as described in the specification.

##STR00001##

A resist topcoat composition and a method of forming patterns using the resist topcoat composition are provided. The resist topcoat composition including a polymer including a first structural unit represented by Chemical Formula M-1 and a second structural unit represented by Chemical Formula 2; and a solvent. Details about the Chemical Formulas are as described in the specification.

Disclosed systems and techniques are directed to improvement of semiconductor manufacturing. In one embodiment, the disclosed techniques include forming a deformation-accommodating layer (DAL) on a target substrate. The target substrate can include a first substrate supporting one or more manufactured features, or a second substrate. The techniques further include removing one or more portions of the DAL, causing the first substrate and the second substrate to form a composite structure, and thinning the first substrate to expose at least a subset of the one or more manufactured features, wherein the one or more portions of the DAL are removed to cause, responsive to the thinning, a deformation of the composite structure.

A method of patterning a substrate includes exposing a photoresist layer on the substrate with a pattern of actinic radiation to form a chemically reactive surface pattern, and coating, at the track system, a spin-on-material to convert the chemically reactive surface pattern to a photoresist surface mask pattern. The method further includes etching the photoresist layer using the photoresist surface mask pattern as a first etch mask to form a photoresist mask pattern, and etching a layer to be etched with the photoresist mask pattern as a second etch mask.

A resist underlayer film having a particularly high dry etching rate; a resist underlayer film-forming composition; a resist pattern forming method; and a semiconductor device production method. The resist underlayer film-forming composition contains a solvent and an epoxy adduct obtained by reacting a compound represented by formula (1) and an epoxy adduct-forming compound. The epoxy adduct-forming compound is one or more compounds selected from the group made of carboxylic acid-containing compounds, carboxylic anhydride-containing compounds, hydroxy group-containing compounds, thiol group-containing compounds, amino group-containing compounds, and imide group-containing compounds. ##STR00001##

A tin compound includes a tin-oxygen double bond, a photoresist composition including the same, and a method for forming a photoresist pattern using the same. In addition, a method for forming a photoresist pattern includes the step of dissociating an organic ligand of an organometallic compound upon light exposure to cause an addition reaction between metal molecules.

A manufacturing method of a semiconductor structure including following steps is provided. A patterned photoresist layer is formed on a substrate by a lithography process. The patterned photoresist layer includes a first opening and a second opening. The first opening includes a first inclined sidewall. An etching process is performed on the substrate by using the patterned photoresist layer as a mask to form a third opening corresponding to the first opening and a fourth opening corresponding to the second opening in the substrate. The third opening includes a second inclined sidewall. A conductive layer is formed on the substrate. The conductive layer fills the third opening and the fourth opening. A portion of the conductive layer is removed by using the conductive layer located in the third opening as a stop layer to form a mark in the third opening and a TSV in the fourth opening.

A method of manufacturing a semiconductor device includes forming a first protective layer over an edge portion of a first main surface of a semiconductor substrate. A metal-containing photoresist layer is formed over the first main surface of the semiconductor substrate. The first protective layer is removed, and the metal-containing photoresist layer is selectively exposed to actinic radiation. A second protective layer is formed over the edge portion of the first main surface of the semiconductor substrate. The selectively exposed photoresist layer is developed to form a patterned photoresist layer, and the second protective layer is removed.

A method of forming a device includes forming a patterned resist layer over a substrate using an extreme ultraviolet (EUV) lithography process. The method includes forming a mandrel in a plasma processing chamber by selectively depositing a mandrel material over the patterned resist layer, the mandrel including the patterned resist layer and the mandrel material.

A photoresist includes a solvent, a polymer and an additive. The polymer is dissolved in the solvent, and the additive is dispersed in the solvent. The additive includes a double bond or includes an epoxy group. The additive has a surface tension different from a surface tension of the polymer.