An IC die includes a temperature control element suitable for three-dimensional IC package with enhanced thermal control and management. The temperature control element may be formed as an integral part of an IC die that may assist temperature control of the IC die when in operation. The temperature control element may include a heat dissipation material disposed therein to assist dissipating thermal energy generated by the plurality of devices in the IC die during operation.

The present invention provides a packaging structure and a manufacturing method thereof. The packaging structure includes a first substrate, a first chip, a second chip, a first heat conductor and a second heat conductor, wherein the first substrate includes a cavity; the first chip is embedded in the cavity and includes a first connecting surface and a first heat-conducting surface that face away from each other; the second chip is disposed on a side of the first connecting surface and electrically connected to the first chip, a side of the second chip distal from the first chip includes a second heat-conducting surface on a side; and the first heat conductor is connected to the first heat-conducting surface, and the second heat conductor is connected to the second heat-conducting surface. The first substrate includes a third connecting surface that is flush with the first connecting surface.

Provided is a package structure, including a substrate, a chip on the substrate in a flip-chip manner, the chip including a circuit layer, and a side heat dissipator on a side of the chip, the side heat dissipator comprising a heat conduction material, wherein the side heat dissipator is electrically connected to the circuit layer.

A system comprises: an inverter configured to convert DC power from a battery to AC power to drive a motor, wherein the inverter includes: a power switch including a drain terminal, a source terminal, and a gate terminal; and a controller configured to detect a change in current at the source terminal of the power switch using a complex impedance of a metal trace connected to the source terminal of the power switch, and control a gate control signal to the gate terminal based on the detected change in current.

A device package comprising an integrated cooling assembly comprising a semiconductor device and a cold plate directly bonded to the semiconductor device. The cold plate comprises a top portion, sidewalls extending downwardly from the top portion to a backside of the semiconductor device, an inlet opening, and an outlet opening. The top portion, the sidewalls, and the backside of the semiconductor device collectively define a coolant chamber volume therebetween. The inlet opening and the outlet opening are disposed in the top portion and are in fluid communication with the coolant chamber volume. The inlet opening is disposed above a hotspot region of the semiconductor device.

A semiconductor assembly includes a semiconductor element designed as a power semiconductor module and comprising a contact, and a connection element designed as a busbar which is connected to the contact of the power semiconductor module via a force-fit connection, in particular a screw connection. The busbar includes a cover plate and a closed cooling channel structure with a cooling channel which is produced at least partially by an FSC (Friction Stir Channeling) method and arranged to run through the cover plate.

A semiconductor device, including: a stacked substrate; a semiconductor device element mounted on the stacked substrate via a first bonding layer; a metal base bonded to the stacked substrate via a second bonding layer; and a water jacket bonded to the metal base, the water jacket having two ends and a center portion. The first and second bonding layers are identical, or different, in a material and a composition thereof. The water jacket has a plurality of heat dissipation fins, lengths of which are in an ascending order from each of the ends of the water jacket to the center portion of the water jacket.

A method of fabricating an electronic device includes forming an embedded die frame having a cavity and a routing structure, a semiconductor die in the cavity with a gallium nitride layer on the routing structure, and a heat spreader having a thermally conductive insulator layer and a metal plate, the thermally conductive insulator layer having a first side that faces the embedded die frame and an opposite second side that faces away from the embedded die frame, with a portion of the first side of the thermally conductive insulator layer extending over a side of a silicon substrate of the semiconductor die, and the metal plate on the second side of the thermally conductive insulator layer.

A semiconductor device includes a chip and a cooling apparatus dissipating heat generated in the chip during an operation of the chip, the cooling apparatus including a base, a plurality of microchannels, and a manifold disposed over the plurality of microchannels. A method of fabricating the semiconductor device includes increasing a thermal conductivity of the base of the cooling apparatus, or a thermal conductivity of the chip, or both, and directly bonding the cooling apparatus to the chip.

An electronic device includes a leadframe where the leadframe includes a first set of leads, a second set of leads, and conductive pads. A heat sink is attached to the conductive pads. The heat sink includes a pair of heat sink pads separated by a gap, and a die attach pad. The die attach pad has a semi-circular shape and is connected to an end of each of the pair of heat sink pads to form a U-shape. The die attach pad further includes an airgap prevention feature. A die is attached to the heat sink and wire bonds connect the die to the leadframe. A mold compound encapsulates the heat sink, the die, and the wire bonds.