The polishing pad according to an embodiment comprises a multifunctional low-molecular-weight compound as one of the polymerization units of the polyurethane-based resin that constitutes the polishing layer, thereby reducing the unreacted diisocyanate monomer in the production process to enhance the processability and quality and to increase the crosslinking density. Thus, the polishing pad may be applied to a process of preparing a semiconductor device, which comprises a CMP process, to provide a semiconductor device such as a wafer of excellent quality.

A means capable of sufficiently removing residues remaining on the surface of a polished object is to be provided. The present invention relates to a surface treatment composition, containing a component (A) and a component (B) and having pH of 8.0 or more: component (A): a polymer having a constituent unit having a quaternary nitrogen-containing onium salt or a constituent unit of a structure (X) below, ##STR00001## component (B): a buffer represented by a formula: RCOONH.sub.4.sup.+.

A method of polishing a layer on the substrate at a polishing station includes the actions of monitoring the layer during polishing at the polishing station with an in-situ monitoring system to generate a plurality of measured signals for a plurality of different locations on the layer; generating, for each location of the plurality of different locations, an estimated measure of thickness of the location, the generating including processing the plurality of measured signals through a neural network; and at least one of detecting a polishing endpoint or modifying a polishing parameter based on each estimated measure of thickness.

A polishing liquid containing: abrasive grains; an additive; and water, in which the additive includes (A1) a compound having two or more nitrogen atoms to which a hydroxyalkyl group is bonded and (B) a 4-pyrone-based compound represented by General Formula (1) below. A polishing liquid containing: abrasive grains; an additive; and water, in which the additive includes (A2) a polyglycerol and (B) a 4-pyrone-based compound represented by General Formula (1) below.

##STR00001##

[In the formula, X.sup.11, X.sup.12, and X.sup.13 are each independently a hydrogen atom or a monovalent substituent.]

The present disclosure is to provide a polishing pad which is capable of providing physical properties corresponding to various polishing purposes for various polishing objects through the subdivided structural design in a thickness direction, and of securing environmental friendliness by applying a recycled or recyclable material to at least some components, in relation to disposal after use, unlike the conventional polishing pad. Specifically, it includes a polishing layer, wherein the polishing layer includes a polishing variable layer having a polishing surface; and a polishing constant layer disposed on a rear surface side of the polishing variable layer opposite to the polishing surface.

An apparatus for chemical mechanical polishing of a wafer includes a process chamber and a rotatable platen disposed inside the process chamber. A polishing pad is disposed on the platen and a wafer carrier is disposed on the platen. A slurry supply port is configured to supply slurry on the platen. A process controller is configured to control operation of the apparatus. A set of microphones is disposed inside the process chamber. The set of microphones is arranged to detect sound in the process chamber during operation of the apparatus and transmit an electrical signal corresponding to the detected sound. A signal processor is configured to receive the electrical signal from the set of microphones, process the electrical signal to enable detection of an event during operation of the apparatus, and in response to detecting the event, transmit a feedback signal to the process controller. The process controller is further configured to receive the feedback signal and initiate an action based on the received feedback signal.

A system is provided. The system includes a polishing apparatus and a polishing apparatus monitoring system. The polishing apparatus includes a platen. The polishing apparatus includes a polishing pad coupled to the platen and configured to be rotated by the platen. The polishing apparatus includes a pad conditioner configured to condition a polishing surface of the polishing pad. The polishing apparatus monitoring system includes a first image sensor configured to capture a first image of the polishing pad. The polishing apparatus monitoring system includes a second image sensor configured to capture a second image of the pad conditioner. The polishing apparatus monitoring system includes a computer configured to determine, based upon at least one of the first image or the second image, whether the polishing apparatus is associated with a potential defect.

The present disclosure provides a fabricating method of a high electron mobility transistor device, including a substrate, a nucleation layer, a buffer layer, an active layer and a gate electrode. The nucleation layer is disposed on the substrate, and the buffer layer is disposed on the nucleation layer, wherein the buffer layer includes a first superlattice layer having at least two heteromaterials alternately arranged in a horizontal direction, and a second superlattice layer having at least two heteromaterials vertically stacked along a vertical direction. The at least two heteromaterials stack at least once within the second superlattice layer. The active layer is disposed on the buffer layer, and the gate electrode is disposed on the active layer.

A chemical mechanical polishing method includes transferring a substrate onto a chuck supported by a drive shaft when the chuck is located at a first height, raising the chuck to a second height greater than the first height such that a top surface of the substrate is in contact with at least one polishing pad, polishing the substate by the at least one polishing pad, lowering, the chuck to a third height lower than the second height, and transferring the substrate off of the chuck.

Embodiments described herein include a method for manufacturing a neural implant including patterning a circuit-bearing substrate to produce a first intermediate structure having a plurality of electrode contacts disposed on a first side thereof. The method can include applying an encapsulation layer to the first side of the first intermediate structure to produce a second intermediate structure and coupling a first surface of the second intermediate structure to a carrier, the first surface of the second intermediate structure including the encapsulating layer. The method can include thinning the second intermediate structure to produce a third intermediate structure and forming a plurality of recesses in a portion of the third intermediate structure to produce a fourth intermediate structure. The method can include releasing the carrier from the fourth intermediate structure to produce the neural implant.