Methods of modeling chemical mechanical polishing applied to a wafer according to a recipe are provided. In one aspect, the method includes providing recipe data defining the recipe to a first model trained by recipe samples, obtaining a first removal amount from the first model, providing wafer data defining the wafer and the recipe data to a second model trained by the recipe samples and wafer samples, obtaining a second removal amount from the second model, and estimating a removal amount of the wafer generated by the chemical mechanical polishing, based on the first removal amount and the second removal amount.

A method for fabricating semiconductor devices is disclosed. The method includes forming, on a first side of a substrate, a first stack and a second stack. The method includes etching, from the first side, a portion of the substrate interposed between the first and second stacks to form a recess. The method includes filling the recess with a dielectric material to form an isolation structure. The method includes forming, on the first side, one or more first interconnect structures over the first and second stacks. The method includes removing, from a second side of the substrate opposite to the first side, a remaining portion of the substrate. The method includes forming a via structure extending through at least the isolation structure. The method includes forming, on the second side, one or more second interconnect structures.

Compositions, systems, and related methods for chemical mechanical planarization (CMP) polishing of silicon carbide substrates. A composition comprises at least 5% by weight of a permanganate component based on a total weight of the composition and a plurality of particles. The plurality of particles has a width percentage (WIP) less than 500.

The invention provides a chemical mechanical polishing solution for metal and metal nitride substrates comprising: a solvent; at least one abrasive with a Mohs hardness of at least 8; and at least one soluble metal oxide anion wherein the metal is selected from vanadium, niobium, tantalum, chromium, molybdenum and tungsten.

A polishing agent which has excellent storage stability and a high selective ratio between a silicon oxide and a stopper film while maintaining the silicon oxide removal. A polishing agent containing abrasive grains, an anionic polymer, an acidic compound selected from phosphoric acid compounds and organic acid compounds, and water, wherein the anionic polymer is a copolymer containing a hydrophobic monomer and an anionic monomer, an acid value of the anionic polymer is 20 to 400 mgKOH/g; a partition coefficient of the hydrophobic monomer is 0 to 4; the anionic monomer contains at least one type selected from unsaturated monocarboxylic acids and salts thereof, and when an acid compound having a highest molar concentration among the acidic compounds is defined as a first acidic compound, pKa of the first acidic compound and pH of the polishing agent satisfy a following relationship: |pKapH|1.5.

A CMP slurry composition for polishing a tungsten pattern wafer and a method of polishing a tungsten pattern wafer, the CMP slurry composition includes a solvent; an abrasive agent containing silica modified with a silane compound having at least one nitrogen atom; and an alkylene oxide group-containing fluorine surfactant.

A method of manufacturing a semiconductor device includes performing chemical mechanical polishing on a surface using a polishing slurry including abrasives, and first cleaning by supplying a cleaning slurry including soft particles and a dispersion medium to remove the abrasives from a polished surface on which the chemical mechanical polishing is performed he soft particles having a lower hardness than the polished surface, wherein a zeta potential of one of the soft particles and the abrasives at a pH of the cleaning slurry is greater than 0, and a zeta potential of the other of the soft particles and the abrasives at the pH of the cleaning slurry is less than 0.

Disclosed herein is a chemical mechanical polishing apparatus, including a platen having an upper surface to support a polishing pad, the platen having an annular chamber below and separated from a portion of an upper surface of the platen by a plate that is sufficiently flexible to deflect under a change of a pressure in the annular chamber, the platen having a channel fluidically connecting the annular chamber to a port in the platen; a pressure source coupled to the port to control the pressure in the annular chamber; a carrier head to hold a surface of a substrate against the polishing pad; and a motor to generate relative motion between the platen and the carrier head so as to polish an overlying layer on the substrate.

Compositions for polishing substrates are provided. A composition comprises at least one of a plurality of coated particles, an oxidizer, a pH adjuster, or any combination thereof. The plurality of coated particles, the oxidizer, and the pH adjuster are present in an amount sufficient for the composition, when used for polishing a silicon carbide substrate, to reduce a surface roughness, R.sub.a, of the silicon carbide substrate to 0.1 nm or less; and/or remove silicon carbide from the silicon carbide substrate at a material removal rate of 0.01 m/hr or greater. Related methods and related kits, among other things, are also provided.

Monitoring operations of a polishing system includes obtaining a time-based sequence of reference images of a component of the polishing system performing operations during a test operation of the polishing system, receiving from a camera a time-based sequence of monitoring images of an equivalent component of an equivalent polishing system performing operations during polishing of a substrate, determining a difference value for the time-based sequence of monitoring images by comparing the time-based sequence of reference images to the time-based sequence of monitoring image using an image processing algorithm, determining whether the difference value exceeds a threshold, and in response to determining the difference value exceeds the threshold, indicating an excursion.