A method of manufacturing single-photon detector includes forming a first electrode on a front side of a substrate, removing the substrate and preforming ion implantation on a backside of an epitaxial layer to form a contact region for a second electrode, which extends from the surface of the epitaxial layer to a first predetermined depth within the epitaxial layer. The second electrode is be electrically connected to the contact region for the second electrode. Since the substrate is removed, the epitaxial layer, which is provided as a semiconductor layer, has a uniform thickness. The contact region for the second electrode has a uniform thickness, and its dopant concentration is easy to control and adjust. Thus, the second electrode can be formed so as to have uniform contact resistance across its different regions.

A semiconductor device including a cap layer and a method for forming the same are disclosed. In an embodiment, a method includes epitaxially growing a first semiconductor layer over an N-well; etching the first semiconductor layer to form a first recess; epitaxially growing a second semiconductor layer filling the first recess; etching the second semiconductor layer, the first semiconductor layer, and the N-well to form a first fin; forming a shallow trench isolation region adjacent the first fin; and forming a cap layer over the first fin, the cap layer contacting the second semiconductor layer, forming the cap layer including performing a pre-clean process to remove a native oxide from exposed surfaces of the second semiconductor layer; performing a sublimation process to produce a first precursor; and performing a deposition process wherein material from the first precursor is deposited on the second semiconductor layer to form the cap layer.

To suppress damage to a surface to be polished of a substrate and improve a polishing rate. A substrate processing apparatus includes a table 100 for supporting a substrate WF, a pad holder 226 for holding a polishing pad 222 for polishing the substrate WF supported by the table 100, a nozzle 228 for supplying a polishing liquid around the pad holder 226, and a pad rotation mechanism for rotating the pad holder 226. The pad holder 226 includes a discharge hole 221-2a formed in the center of a holding surface 221-2c configured to hold the polishing pad 222 and a discharge passage 221-2b communicated with an outside of the pad holder 226 from the discharge hole 221-2a.

A manufacturing method of a semiconductor structure including following steps is provided. A patterned photoresist layer is formed on a substrate by a lithography process. The patterned photoresist layer includes a first opening and a second opening. The first opening includes a first inclined sidewall. An etching process is performed on the substrate by using the patterned photoresist layer as a mask to form a third opening corresponding to the first opening and a fourth opening corresponding to the second opening in the substrate. The third opening includes a second inclined sidewall. A conductive layer is formed on the substrate. The conductive layer fills the third opening and the fourth opening. A portion of the conductive layer is removed by using the conductive layer located in the third opening as a stop layer to form a mark in the third opening and a TSV in the fourth opening.

The present disclosure provides a means by which a good polishing removal rate for an object to be polished including a silicon-containing material can be realized while at the same time reducing scratches on the surface of the object to be polished that has been polished. The present disclosure is a polishing composition containing: abrasive grains having a zeta potential of 5 mV or less; a first polyoxyalkylene compound having a weight average molecular weight of 100 or more and 900 or less; and a second polyoxyalkylene compound having an oxyalkylene unit different from that of the first polyoxyalkylene compound and having a weight average molecular weight of 100 or more and 900 or less, wherein the polishing composition has a pH of less than 7.

A modification method of a polyurethane, including the steps of: preparing a polyurethane having an ethylenically unsaturated bond; and treating the polyurethane with a liquid containing a compound having a conjugated double bond, or a modification method of a polyurethane, including the steps of: preparing a polyurethane having a conjugated double bond; and treating the polyurethane with a liquid containing a compound having an ethylenically unsaturated bond is used.

A chemical mechanical polishing (CMP) slurry is designed and configured for reducing polishing pad wear rate. The CMP slurry includes at least one oxidizer, a primary abrasive, a solvent, and a secondary abrasive. The secondary abrasive is a mixture of chemicals that yield a stable suspension of the CMP slurry. The CMP slurry for reducing polishing pad wear rate is designed and configured to provide a pad wear rate of less than 2.0% at a 1-hour polishing time, and/or a pad wear rate of less than 10.0% at a 4-hour polishing time.

According to the present invention, a moderately high polishing speed for a specific material and appropriate ratio of polishing speeds between two or more different materials are achieved in polishing using a polishing composition. The present invention relates to a polishing composition comprising abrasive grains, a water-soluble polymer having no alcoholic hydroxyl group in a side chain, a polyvalent carboxylic acid (salt), and an oxidizing agent, and having a pH of less than 6.

Some implementations described herein include systems and techniques for fabricating a stacked die product. The systems and techniques include using a supporting fill mixture that includes a combination of types of composite particulates in a lateral gap region of a stack of semiconductor substrates and along a perimeter region of the stack of semiconductor substrates. One type of composite particulate included in the combination may be a relatively smaller size and include a smooth surface, allowing the composite particulate to ingress deep into the lateral gap region. Properties of the supporting fill mixture including the combination of types of composite particulates may control thermally induced stresses during downstream manufacturing to reduce a likelihood of defects in the supporting fill mixture and/or the stack of semiconductor substrates.

A slurry composition may include an abrasive, a solvent, and polyol. The abrasive may include any one of metal oxide, metal nitride, metal oxynitride, and a combination thereof. The polyol may have about 0.01 mM to about 500 mM of a concentration. Thus, high polishing selectivities may be provided between a BSi layer, a TiN layer and a SiN layer by controlling a polishing rate of the TiN layer.