The present invention relates to a millimeter wave RF antenna array apparatus. The apparatus comprises a single-chip MMIC comprising active circuit elements of the antenna array apparatus. The active circuit elements comprise at least antenna feed circuitry configured to feed antenna elements of the antenna array. The apparatus comprises an interposer fabricated of low-loss RF material, such as glass, low-temperature co-fired ceramic, LTCC, or printed circuit board, PCB. The interposer comprises transmission lines of a RF distribution network and a plurality of antenna elements of the antenna array. The transmission lines of the interposer are coupled to the MMIC for providing RF connections for distributing RF signals to and from the antenna feed circuitry. Area of the interposer that comprises the transmission lines of the RF distribution network and the plurality of antenna elements is collocated with the area of the MMIC that comprises said antenna feed circuitry.

An electronic device includes a multilevel package substrate with a horizontal substrate integrated waveguide (SIW) with a channel, a vertical SIW with an opening, a grounded coplanar waveguide (GCPW), a first transition between the horizontal SIW and the GCPW, and a second transition between the horizontal and vertical SIWs, as well as a semiconductor die having conductive structures coupled to a signal trace and a ground trace of the GCPW, and a package structure that encloses the semiconductor die and a portion of the multilevel package substrate.

Methods and devices used to cancel non-linear capacitances in high power radio frequency (RF) switches manufactured in bulk complementary metal-oxide-semiconductor (CMOS) processes are disclosed. The methods and devices are also applicable to stacked switches and RF switches fabricated in silicon-on-insulator (SOI) technology.

A semiconductor device includes: an MMIC having a DC pad; a bias substrate; a plurality of MIM capacitors mounted on the bias substrate; a plurality of pads provided on the bias substrate and respectively connected to overlying electrodes of the MIM capacitors; and a wire connecting the DC pad to any one of the plurality of pads, wherein the plurality of pads are arranged between the DC pad and the plurality of MIM capacitors in a planar view, and extend parallel to a row of the plurality of MIM capacitors laterally arranged side by side.

A transistor amplifier package includes a package substrate comprising conductive patterns exposed by solder mask patterns at a surface thereof, and at least one transistor die comprising a semiconductor structure attached to the surface of the package substrate by a solder material and aligned by the solder mask patterns such that respective gate, drain, and/or source terminals of the at least one transistor die are electrically connected to respective ones of the conductive patterns. Related transistor amplifiers and fabrication methods are also discussed.

An optically-controlled switch is provided. The optically-controlled switch includes a circuit board including a transmission line and a photoconductive switching region that is adjacent to the transmission line and has electrical properties controllable by light and a laser located on the circuit board and configured to emit light toward the photoconductive switching region.

Example embodiments relate to power amplifiers and Doherty amplifiers that include the same. One example embodiment includes a power amplifier. The power amplifier includes one or more radiofrequency (RF) output terminals. The power amplifier also includes a Gallium Nitride (GaN) semiconductor die on which a power field-effect transistor (FET) is integrated. The FET includes a plurality of FET cells that are adjacently arranged in a row. The FET cells are connected either directly or indirectly to the one or more RF output terminals via a respective first inductor. For FET cells arranged at opposing ends of the row of FET cells, a total FET cell gate width and an inductance of the first inductor is larger and smaller than the total FET cell gate width and inductance of the first inductor for one or more FET cells arranged in the middle of the row of FET cells, respectively.

Novel tools and techniques are provided for implementing mixed dielectric materials for improving signal integrity of integrated electronics packages or semiconductor packages. In various embodiments, a substrate for a semiconductor device includes: a first layer made of a first material; a second layer made of a second material; and a third layer disposed between the first and second layers, and that is made of a third material different from the first and second materials. In some cases, the first, second, and third layers each contains a plurality of gas-filled regions (e.g., but not limited to, an aerogel core of the third layer and/or polymer resin matrix embedded with hollow silica spheres or aerogel spheres of the first and second layers, or the like). Coaxial ground shields around signal lines in the substrate can be used to improve signal integrity. High dielectric constant lossy lines between signal lines can reduce crosstalk.

An integrated device package is disclosed. The integrated device package can include a carrier that has a multilayer structure having a first layer and a second layer. The first layer at least partially defines a lower side of the carrier. An electrical resistance of the second layer is greater than an electrical resistance of the first layer. The integrated device package can include a microelectronicmechanical systems die that is mounted on an upper side of the carrier opposite the lower side. The integrated device package can include a lid that is coupled to the carrier. The lid and the microelectronicmechanical systems die are spaced by a gap defining a back volume.

A radio frequency (RF) chip package includes: an RF die; a first peripheral circuit chip; a second peripheral circuit chip; a substrate having a -shaped step formed on a portion thereof so that the RF die is mounted on top of the step of the substrate and the first peripheral circuit chip and the second peripheral circuit chip are mounted on top of the substrate where no step is formed; a first mutual inductance controller for controlling the dimension of the mutual inductance between the first peripheral circuit chip and the RF die; and a second mutual inductance controller for controlling the dimension of the mutual inductance between the second peripheral circuit chip and the RF die.