A high-density integrated device package may include two or more primary device dies arranged along a first plane, an inductor comprising an inductor core and an inductor coil, the inductor being fixedly connected to at least one of the primary device dies, and a dielectric substrate arranged along a second plane which is substantially perpendicular to the first plane. The integrated device package further includes a secondary device die (e.g., a power IC) electrically connected to the dielectric substrate such that an orientation of the secondary device die is substantially perpendicular to that of the two or more primary device dies, wherein the dielectric substrate is fixedly connected to the inductor core, and wherein the dielectric substrate is electrically connected to at least one of the primary device dies by an edge connector.

A semiconductor device includes a substrate including a conductive transceiver pattern proximate to the substrate top side. An antenna structure includes an antenna dielectric structure coupled to the substrate top side, an antenna conductive structure having an antenna element, and a cavity below the antenna element. The antenna element overlies the conductive transceiver pattern. The cavity includes a cavity ceiling, a cavity base, and a cavity sidewall. Either a bottom surface of the antenna element defines the cavity ceiling and a perimeter portion of the antenna element is fixed to the antenna dielectric structure, or the antenna dielectric structure includes a body portion having a bottom surface that defines the cavity ceiling and the antenna element is vertically spaced apart from the bottom surface of the body portion. A semiconductor component is coupled to the substrate bottom side and the transceiver pattern.

A low-voltage varistor includes a cured body of a resin composition for forming the low-voltage varistor. The resin composition includes: (A) at least one selected from carbon nanotubes and carbon aerogels; and (B) at least one selected from epoxy resin and acrylic resin.

A possible benefit of the present disclosure is to further improve a heat dissipation property of an electronic component. A high-frequency module includes a mounting substrate, a filter (for example, a transmission filter), a resin layer, a shielding layer, and a metal member. The resin layer covers at least a portion of an outer peripheral surface (for example, an outer peripheral surface) of the filter. The shielding layer covers at least a portion of the resin layer. The metal member is disposed at a first principal surface of the mounting substrate. The metal member is connected to a surface of the filter on the opposite side from the mounting substrate, the shielding layer, and the first principal surface of the mounting substrate.

A semiconductor device package includes a substrate, and interconnection structure and a package body. The interconnection structure is disposed on the substrate. The interconnection structure has a conductive structure and a first dielectric layer covering a portion of the conductive structure. The conductive structure defines an antenna feeding point. The package body is disposed on the substrate and covers the interconnection structure.

A device includes a high frequency chip and a dielectric material arranged between a first area radiating an electromagnetic interference signal in a first frequency range between 1 GHz and 1 THz and a second area receiving the electromagnetic interference signal. An attenuation of the dielectric material is more than 5 dB/cm at least in a subrange of the first frequency range.

A wiring board includes a first insulating layer, a second insulating layer, a first ground conductor, and a first signal conductor. The first insulating layer includes a first upper surface and a first lower surface. The second insulating layer is positioned on the first insulating layer and includes a second upper surface and a second lower surface. The first ground conductor is positioned on the first lower surface and includes a first opening and a second opening. The first signal conductor includes a first line positioned on the first upper surface and a second line positioned on the second lower surface. The first line includes a first end portion and a first line portion. The second line includes a second end portion electrically connected to the first end portion, and a second line portion. The first opening is larger in area than the second opening in a planar view.

A vertical interconnect micro-component adapted for radio frequency signal transmission, preferably for the use in three-dimensional integrated circuits, including: a glass substrate with a first side and a second side opposite to the first side, at least one inner through connector formed in the glass substrate, wherein the inner through connector includes an inner cavity in the glass substrate extending from the first side to the second side of the glass substrate, the inner cavity being fully or partially filled with solid conductor material, and an outer through connector structure formed in the glass substrate and surrounding the at least one inner through connector, the outer through connector structure including one or more outer cavities in the glass substrate extending from the first side to the second side of the glass substrate, the one or more outer cavities each being fully or partially filled with solid conductor material.

A method of forming a hybrid waveguide semiconductor device is provided. The method includes forming a packaged radio frequency (RF) device and affixing a waveguide structure on the packaged RF device. The waveguide structure includes a non-conductive substrate and an air-filled waveguide formed in the substrate. A radiating element of the packaged RF device includes a pin structure connected to a die pad of a semiconductor die and a hat structure. The pin structure is embedded in an encapsulant of the packaged RF semiconductor device, and the hat structure is exposed within the air-filled waveguide.

A Doherty amplifier includes a carrier amplifier and a peak amplifier. Each of the carrier amplifier and the peak amplifier is a differential amplifier including a first phase amplifier and a second phase amplifier. The Doherty amplifier also includes a balun configured to synthesize an output signal of the carrier amplifier and an output signal of the peak amplifier. The carrier amplifier and the peak amplifier are formed in an integrated circuit. The balun is formed on a printed wiring board on which the integrated circuit is mounted.