A structure is manufactured by forming a mask that has an opening pattern on a fine recessed and projected structure of a substrate having the fine recessed and projected structure with an average period of 1 m or less on a surface thereof, etching the surface of the substrate from a side of the mask to form a recessed portion which has an opening greater than the average period of the fine recessed and projected structure according to the opening pattern of the mask, the recessed portion having a depth equal to or greater than double a difference in height between recesses and projections of the fine recessed and projected structure, and then removing the mask.

The present invention provides a substrate processing method. A substrate processing method according to an embodiment may include a first step of supplying a process gas to a chamber and exciting the process gas to react with a specific film formed on the substrate to generate a reaction product, and a second step of supplying a dissociation gas to the chamber and exciting the dissociation gas to remove the reaction product from the substrate.

Various embodiments of methods are provided that utilize an overlayer to accelerate etching of an underlayer provided on a semiconductor substrate. In the embodiments disclosed herein, an ultrathin (e.g., less than 2 nm) overlayer film is deposited onto an underlayer to enhance the local etch rate of (and selectivity to) the underlayer during a dry chemical etch process performed at low temperature (e.g., less than or equal to 100 C.). The overlayer film, which comprises a metal oxide or metal fluoride material, accelerates etching of the underlayer at temperatures below the threshold energy typically needed to enable chemical reactions on a bare underlayer surface by providing a medium for more effective chemical reactions at the surface of the underlayer.

Provided are a hard mask including an amorphous boron nitride film and a method of fabricating the hard mask, and a patterning method using the hard mask. The hard mask is provided on a substrate and used for a process of patterning the substrate, and the hard mask includes an amorphous boron nitride film.

Provided is a system including a microwave source configured to generate microwaves, a branch apparatus including an input port connected to the microwave source, first and second chambers configured to process a wafer by using the microwaves, a first filter configured to transfer the microwaves to or cut off the microwaves from the first chamber, and connected to a first output port of the branch apparatus, and a second filter configured to transfer the microwaves to or cut off the microwaves from the second chamber, and connected to a second output port of the branch apparatus.

The present disclosure describes methods and systems for plasma-assisted etching of a metal oxide. The method includes modifying a surface of the metal oxide with a first gas, removing a top portion of the metal oxide by a ligand exchange reaction, and cleaning the surface of the metal oxide with a second gas.

Provided is a reduction treatment method in which hydrogen radicals are efficiently generated in an amount required for reduction treatment and the surface of an object to be treated is reduced by a relatively simple treatment process. A reduction treatment method including: irradiating a hydrogen radical source-containing material with ultraviolet light having a wavelength of 255 nm or less to generate hydrogen radicals; and bringing the generated hydrogen radicals into contact with a surface of an object to be treated to reduce the surface.

Exemplary semiconductor processing methods may include depositing a metal-doped boron-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The metal-doped boron-containing material may include a metal dopant comprising tungsten. The substrate may include a silicon-containing material. The methods may include depositing one or more additional materials over the metal-doped boron-containing material. The one or more additional materials may include a patterned photoresist material. The methods may include transferring a pattern from the patterned photoresist material to the metal-doped boron-containing material. The methods may include etching the metal-doped boron-containing material with a chlorine-containing precursor. The methods may include etching the silicon-containing material with a fluorine-containing precursor. The metal dopant may enhance an etch rate of the silicon-containing material. The methods may include removing the metal-doped boron-containing material from the substrate with a halogen-containing precursor.

A method of forming features over a semiconductor substrate is provided. The method includes supplying a gas mixture over a surface of a substrate at a continuous flow rate. A first radio frequency (RF) signal is delivered to an electrode while the gas mixture is supplied at the continuous flow rate to deposit a polymer layer over the surface of the substrate. The surface of the substrate includes an oxide containing portion and a nitride containing portion. A second RF signal is delivered to the electrode while continuously supplying the gas mixture at the continuous flow rate to selectively etch the oxide containing portion relative to the nitride containing portion.

An electronic device is provided. An example electronic device includes: a semiconductor body of Silicon Carbide, having a surface having a first portion of the surface that defines an active region of the electronic device and a second portion of the surface that is external to the active region; a metallization extending on the first portion of the surface of the semiconductor body; a passivation layer extending on part of the metallization; and an adhesion layer, based on one or more carbon allotropes, extending on the passivation layer.