In an embodiment, a package including: a redistribution structure including a first dielectric layer and a first conductive element disposed in the first dielectric layer; a first semiconductor device bonded to the redistribution structure, wherein the first semiconductor device includes a first corner; and an underfill disposed over the redistribution structure and including a first protrusion extending into the first dielectric layer of the redistribution structure, wherein the first protrusion of the underfill overlaps the first corner of the first semiconductor device in a plan view.

Methods, systems, and devices for a stacked semiconductor system are described. The stacked semiconductor system may include a semiconductor die on a redistribution layer (RDL) and a polymer material at least partially surrounding the semiconductor die. A silicon nitride material may be above the semiconductor die and on the polymer material. A logic die may be hybrid bonded with a bonding material on the silicon nitride material. And a conductive post may extend at least partially through the silicon nitride material and the polymer material and may couple the logic die with the RDL.

A fan-out wafer level packaging (FOWLP) unit which includes a substrate, at least one die, a first dielectric layer, at least one conductive pillar, a second dielectric layer, a plurality of first conductive circuits, a first outer protective layer, a third dielectric layer, a plurality of second conductive circuits, and a second outer protective layer is provided. The die is electrically connected with the outside through at least one first bonding pad around a chip area on a second surface of the die. The die is further electrically connected with the outside through a second bonding pad in at least one opening of the second outer protective layer. Both the first conductive circuits and the second conductive circuits are produced by filling a metal paste into slots and grinding the metal paste. Thereby problems of conventional FOWLP technology including higher manufacturing cost and less environmental benefit can be solved.

A package includes a memory stack attached to a logic device, the memory stack including first memory structures, a first redistribution layer over and electrically connected to the first memory structures, second memory structures on the first redistribution layer, a second redistribution layer over and electrically connected to the second memory structures, and first metal pillars on the first redistribution layer and adjacent the second memory structures, the first metal pillars electrically connecting the first redistribution layer and the second redistribution layer, wherein each first memory structure of the first memory structures includes a memory die comprising first contact pads and a peripheral circuitry die comprising second contact pads, wherein the first contact pads of the memory die are bonded to the second contact pads of the peripheral circuitry die.

A package structure and method for forming the same are provided. The package structure includes a substrate having a front surface and a back surface, and a die formed on the back surface of the substrate. The package structure includes a first through via structure formed in the substrate, a conductive structure formed in a passivation layer) over the front surface of the substrate. The conductive structure includes a via portion in direct contact with the substrate. The package structure includes a connector (formed over the via portion, wherein the connector includes an extending portion directly on a recessed top surface of the via portion.

An electronic device package and method of fabricating such a package includes a first and second components encapsulated in a volume of molding material. A surface of the first component is bonded to a surface of the second component. Upper and lower sets of redistribution lowers that include, respectively, first and second sets of conductive interconnects are formed on opposite sides of the molding material. A through-package interconnect passes through the volume of molding material and has ends that terminate, respectively, within the upper set of redistribution layers and within the lower set of redistribution layers.

A semiconductor structure includes a first semiconductor device, a second semiconductor device, a connection device and a redistribution circuit structure. The first semiconductor device is bonded on the second semiconductor device. The connection device is bonded on the second semiconductor device and arranged aside of the first semiconductor device, wherein the connection device includes a first substrate and conductive vias penetrating through the first substrate and electrically connected to the second semiconductor device. The redistribution circuit structure is located over the second semiconductor device, wherein the first semiconductor device and the connection device are located between the redistribution circuit structure and the second semiconductor device. The redistribution circuit structure and the first semiconductor device are electrically connected to the second semiconductor device through the conductive vias of the connection device.

A semiconductor structure includes a functional die, a dummy die, a conductive feature, a seal ring and an alignment mark. The dummy die is electrically isolated from the functional die. The conductive feature is electrically connected to the functional die. The seal ring is disposed aside the conductive feature. The alignment mark is disposed between the seal ring and the conductive feature, and the alignment mark is electrically isolated from the dummy die, the conductive feature and the seal ring.

A semiconductor device has a photonic semiconductor die. The photonic semiconductor die is disposed on a carrier with a photonic circuit of the photonic semiconductor die oriented toward the carrier. An e-bar is disposed on the carrier. An encapsulant is deposited over the photonic semiconductor die and e-bar. A first surface of the encapsulant is backgrinded to expose the e-bar. A first build-up interconnect structure is formed over the first surface of the encapsulant. A second build-up interconnect structure is formed over a second surface of the encapsulant. The photonic circuit is exposed through an opening of the second build-up interconnect structure.

This application is directed to packaging technology for providing an electronic device (e.g., a memory device). A memory device includes a stack of memory chips, a device substrate, and a conductive wire. The stack of memory chips includes a first memory chip having a chip pad that is formed on a surface of the first memory chip. The device substrate includes a plurality of substrate pads formed on a front surface of the device substrate. The front surface has a front opening, and the device substrate receives the stack of memory chips via the front opening of the front surface. The conductive wire is coupled to the front surface and the stack of memory chips, and is configure to couple the chip pad and one of the substrate pads electrically. In some embodiments, the device substrate includes a cutout opening that goes through an entire thickness of the device substrate.