A bonding pad structure and a method of manufacturing a bonding pad structure are provided. The bonding pad structure includes a carrier, a first conductive layer disposed over the carrier, a second conductive layer disposed on the first conductive layer and contacting the first conductive layer, and a third conductive layer disposed on the second conductive layer and contacting the second conductive layer. The bonding pad structure also includes a first passivation layer disposed on the first conductive layer and contacting at least one of the first conductive layer or the second conductive layer. An upper surface of the third conductive layer facing away from the carrier is exposed from the first passivation layer.

A method includes: providing a passivation layer with an embedded MIM capacitor; forming a redistribution layer (RDL) above the passivation layer; and forming an opening in the RDL above the MIM capacitor, wherein the opening separates the RDL into first and second RDL structures, wherein each of the first and second RDL structures has a convex-shaped profile on a sidewall that defines the opening that separates the first RDL structure from the second RDL structure, and wherein the convex-shaped profile on the sidewalls resists stress migration from the RDL to the MIM capacitor to resist stress migration induced cracks forming in the MIM capacitor. The forming an opening includes: removing a portion of the RDL to a first depth using first etching operations; and removing a portion of the RDL to a second depth by laterally etching sidewalls of the first and second RDL structures.

A semiconductor device includes a support member, a semiconductor element and a sealing member. The semiconductor element is disposed on a first side in a thickness direction relative to the support member. The sealing member covers a part of the support member and the semiconductor element. The support member has a first surface facing a second side in the thickness direction and exposed from the sealing member. The first surface is formed with a first uneven region. In an example, the first uneven region has an arithmetic mean roughness between 0.2 m and 13 m. In an example, the first uneven region includes a plurality of uneven lines in an arc shape.

A semiconductor package may include a redistribution structure, a semiconductor chip on a surface of the redistribution structure, a UBM pad on an opposite surface of the redistribution structure, a barrier pattern on at least a portion of a lower surface of the UBM pad and surrounding a side surface of the UBM pad, and a connection bump on the lower surface of the UBM pad.

A high-density multi-level interconnect device for harsh environment applications combines thin-film and thick-film processing technologies to achieve superior performance in extreme conditions. The device comprises an alumina substrate with a thin-film metal layer deposited via electron beam evaporation, including a 20 nm titanium adhesion layer and a 400 nm gold layer, followed by a screen-printed thick-film gold layer. The layers are annealed at 850 C. for 10 minutes to promote strong adhesion. This hybrid approach provides improved die shear strength and enhanced thermal cycling resistance. The interconnects are suitable for wide bandgap semiconductor devices operating at temperatures up to 500 C. in harsh environments including elevated temperature, high pressure, and acidic conditions.

Embodiments of a microelectronic assembly include a package substrate comprising: a first layer comprising a first plurality of mutually parallel channels of a first material; a second layer comprising columns of the first material; and a third layer comprising a second plurality of mutually parallel channels of the first material, the second plurality of mutually parallel channels being orthogonal to the first plurality of mutually parallel channels. The second layer is between the first layer and the third layer, at least some columns extend between and contact the first plurality of mutually parallel channels and the second plurality of mutually parallel channels, and at least a portion of the first layer, the second layer and the third layer comprises a second material different from the first material.

A packaged electronic device comprises a power semiconductor die that includes a first terminal and a second terminal, a power substrate comprising a dielectric substrate having a first metal cladding layer on an upper surface thereof, an encapsulation covering the power semiconductor die and at least a portion of the power substrate, a first lead extending through the encapsulation that is electrically connected to the first terminal, and a second lead extending through the encapsulation that is electrically connected to the second terminal. The first terminal is bonded to the first lead via a first transient liquid phase solder joint.

Disclosed are techniques for a structure of an inductive device. In an aspect, an inductive device includes a first set of conductive patterns and a second set of conductive patterns alternatively arranged in a first array; a third set of conductive patterns and a fourth set of conductive patterns alternatively arranged in a second array; a first set of conductive structures configured to connect the first set of conductive patterns and the third set of conductive patterns to form a first coil structure; a second set of conductive structures configured to connect the second set of conductive patterns and the fourth set of conductive patterns to form a second coil structure; and a interconnect configured to connect a first conductive structure of the first set of conductive structures to a second conductive structure of the second set of conductive structures.

A semiconductor package includes a first redistribution substrate comprising a plurality of upper substrate pads including a first upper substrate pad;, a first semiconductor device mounted on the first redistribution substrate and connected to the first redistribution substrate through bonding of the first upper substrate pad to a first connection terminal, a plurality of conductive through posts disposed on the first redistribution substrate outside of the first semiconductor device from a plan view, and a second redistribution substrate disposed on the first semiconductor device and the plurality of conductive through posts. The first upper substrate pad has a convex upper surface and has a coupling roughness formed on an upper surface thereof.

Stacked die modules for semiconductor device assemblies and methods of manufacturing the modules are disclosed. In some embodiments, the module includes a shingled stack of semiconductor dies, each die having an uncovered porch with bond pads. Further, a dielectric structure partially encapsulates the shingled stack of semiconductor dies. The dielectric structure includes openings corresponding to the bond pads. The module also includes conductive structures disposed on the dielectric structure, where each of the conductive structures extends over at least one porch of the semiconductor dies to connect to at least one bond pad through a corresponding opening. The semiconductor device assembly may include a controller die attached to a package substrate, the controller die carrying one or more stacked die modules, and bonding wires connecting terminals of the modules to package bond pads.