A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic insulating substrate; and, b) a white corrosion-resistant non-porous outer layer associated with the ceramic insulating substrate, the white corrosion-resistant non-porous outer layer having a thickness of at least 50 m, a porosity of at most 1%, and a composition comprising at least 15% by weight of a rare earth compound based on total weight of the corrosion-resistant non-porous layer; and, c) an L* value of at least 90 as measured on a planar surface of the white corrosion-resistant non-porous outer layer. Methods of making are also disclosed.

Methods and apparatuses for precise trimming of silicon-containing materials are provided. Methods involve oxidizing silicon-containing materials and thermally removing the oxidized silicon-containing materials at particular temperatures for a self-limiting etch process. Methods also involve a surface reaction limited process using a halogen source and modulated temperature and exposure duration to etch small amounts of silicon-containing materials. Apparatuses are capable of flowing multiple oxidizers at particular temperature ranges to precisely etch substrates.

Embodiments of the present disclosure relate to modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body at least partially defining a processing volume. The chamber body includes a plurality of inject passages arranged in a plurality of flow levels, and one or more exhaust passages formed in the chamber body. The processing chamber includes one or more heat sources operable to heat the processing volume, a substrate support disposed in the processing volume, and a plate spaced from the substrate support. The substrate support and the plate are movable by at least one flow level of the plurality of flow levels to align the substrate support between one or more first inject passages of a first flow level and one or more second inject passages of a second flow level.

Disclosed herein is a system and method for optimizing RF power delivery to a plasma process chamber. This invention utilizes a data-driven approach to determine resonant frequencies for various plasma states, eliminating the need for conventional PID controls. By collecting performance data from an RF power generator as a function of operating frequency during the process recipe execution and analyzing portions of the waveform, the system continuously identifies resonating frequencies for each plasma state. Consequently, the RF power generator adapts in real-time to deliver optimal stability and performance.

A method for etching features in a stack below a patterned mask in an etch chamber is provided. The stack is cooled with a coolant with a coolant temperature below 20 C. An etch gas is flowed into the etch chamber. A plasma is generated from the etch gas. Features are selectively etched into the stack with respect to the patterned mask.

The present disclosure describes methods and systems for plasma-assisted etching of a metal oxide. The method includes modifying a surface of the metal oxide with a first gas, removing a top portion of the metal oxide by a ligand exchange reaction, and cleaning the surface of the metal oxide with a second gas.

The present technology encompasses plasma sources including a first plate defining a first plurality of apertures arranged in a first set of rows. The first plate may include a first set of electrodes extending along a separate row of the first set of rows. The plasma sources may include a second plate defining a second plurality of apertures arranged in a second set of rows. The second plate may include a second set of electrodes extending along a separate row of the second set of rows. Each aperture of the second plurality of apertures may be axially aligned with an aperture of the first plurality of apertures. The plasma sources may include a third plate positioned between the first plate and the second plate. The third plate may define a third plurality of apertures.

A fluid control device that controls a fluid supplied into a process container includes: a flow path block; and a fluid controller installed to the flow path block. The flow path block includes: a gas supply flow path including an inlet, through which the fluid is introduced, and an outlet through which the fluid flows into the process container; and a storage chamber that stores the fluid in the gas supply flow path between the inlet and the outlet. The fluid controller includes: a first valve that opens and closes the gas supply flow path between the inlet and the storage chamber; and a second valve that opens and closes the gas supply flow path between the storage chamber and the outlet.

An etching method includes: exhausting a processing container in which a substrate is accommodated, the substrate including a first film, a porous film and a second film, each of the first film and the porous film being exposed from a surface of the substrate and the second film being not exposed from the surface of the substrate by being coated with the porous film; supplying, by a gas source, an etching gas having an etching property with respect to the first film and the second film to a gas supply path; storing the etching gas in a reservoir provided in the gas supply path to increase an internal pressure of the reservoir; and selectively etching the first film among the first film and the second film by opening a valve provided downstream of the reservoir to supply the etching gas stored in the reservoir into the processing container.

Disclosed herein is an enhanced atomic layer etching (ALE) process for semiconductor manufacturing, focusing on improved gas flow control. It introduces a method of maintaining constant inert gas flow for both surface modification and sputtering steps, significantly reducing gas exchange time, and improving cycle efficiency. Key to this innovation is the pre-determined, fixed set points for mass flow controllers (MFCs) and the valve, streamlining operations and ensuring consistent production quality.