Systems and methods for real-time control of temperature within a plasma chamber are described. One of the methods includes sensing a voltage in real time of a rail that is coupled to a voltage source. The voltage source supplies a voltage to multiple heater elements of the plasma chamber. The voltage that is sensed is used to adjust one or more duty cycles of corresponding one or more of the heater elements. The adjusted one or more duty cycles facilitate achieving and maintaining a temperature value within the plasma chamber over time.

Disclosed is a support unit. The support unit that supports a substrate may include a chuck stage that is rotatable, a heating member disposed above the chuck stage and that heats the substrate supported by the support unit, a power source that applies electric power to the heating member, a window disposed above the chuck stage and defining an interior space, in which the heating member is disposed, and an interlock module that selectively cuts off the electric power applied to the heating member.

A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.

Structures (2, 2A to 2P) according to the present disclosure have respective bases (10, 10A), electrode layers, and terminals. The bases (10, 10A) are made of a ceramic. The electrode layers (111, 111C, 111D, 111F, 111M, 111N, 111O) are located inside the respective bases (10, 10A). The terminals (41, 41G, 41H, 41I, 41J, 41K, 41L) are electrically connected to the respective electrode layers (111, 111C, 111D, 111F, 111M, 111N, 111O) at respective tip portions of the terminals. Further, the terminals (41, 41G, 41H, 41I, 41J, 41K, 41L) are in contact with the respective electrode layers (111, 111C, 111D, 111F, 111M, 111N, 111O) at respective tip surfaces and side surfaces of the terminals.

A substrate processing apparatus including a temperature sensor according to the present disclosure includes a substrate holder which fixes a substrate by an electrostatic force and a body unit which is disposed below the substrate holder and includes a thermal conductivity adjustment channel which adjusts a thermal conductivity based on a pressure formed by a thermal conductivity adjustment gas. A fiber Bragg grating (FBG) temperature is installed in the substrate holder and the FBG temperature sensor is installed in a hollow formed in the substrate holder.

Electrostatic chucks and methods of forming electrostatic chucks are disclosed. Exemplary electrostatic chucks include a ceramic body, a device embedded within the ceramic body, and an interface layer formed overlying the device. Exemplary methods include providing ceramic precursor material within a mold, providing a device, coating the device with an interface material to form a coated device, placing the coated device on or within the ceramic precursor material, and sintering the ceramic precursor material to form the electrostatic chuck and an interface layer between the device and ceramic material formed during the step of sintering.

Aspects of the present disclosure relate to emissive liner arrangements for annealing operations, and related process chambers, systems, components, and methods. In one or more embodiments, an emissive liner arrangement facilitates annealing substrates at an annealing temperature less than 210 degrees Celsius. In one or more embodiments, a processing chamber includes a chamber body at least partially defining a process volume, a substrate support disposed in the process volume, the substrate support including one or more heater elements, and one or more liners disposed between the substrate support and a section of the chamber body. The one or more liners respectively include a ring or a ring segment having an azimuthal length that is 80 degrees or higher. The processing chamber includes a plasma source operable to supply a plasma to the process volume.

A method of manufacturing semiconductor devices, the semiconductor devices manufactured, and apparatuses for forming the semiconductor devices are described in which by-products from etching processes are independently heated separately from a semiconductor wafer. In embodiments a dielectric material is deposited into a trench over a semiconductor substrate and the dielectric material is recessed with an etching process. The etching process includes heating the semiconductor substrate and separately heating a by-product of the etching process.

The present invention provides a susceptor with improved responsiveness of temperature control, and an object thereof is to obtain a high-quality wafer product without impairing productivity. Provided is a susceptor that generates heat by induction heating, the susceptor including a graphite base material and a ceramic coating layer. The graphite base material exhibits a variation (.sub.max/.sub.min) Of an in-plane electrical resistivity distribution of the graphite base material at room temperature of 1.00 to 1.05 and a rate of high-temperature change (.sub.1600/.sub.800) of electrical resistivity at 1600 C. to that at 800 C. of 1.14 to 1.30.

Described herein is a technique capable of preventing a constituent contained in an aluminum alloy from being vaporized and scattered when the aluminum alloy is used in a process vessel which is heated to a high temperature. According to one aspect thereof, there is provided a technique including a process chamber; a substrate support configured to support a substrate in the process chamber; and a heater configured to heat the substrate supported by the substrate support, wherein the substrate support is made of an aluminum alloy containing magnesium, and a surface of the substrate support is coated by a coating film of aluminum oxide containing magnesium oxide and being substantially free of magnesium.