A method for high volume manufacture of highly integrated power electronics embedded printed circuit board (PCB)cold plate assemblies or units includes assembling an integrated power electronics embedded PCB fabrication panel onto a cold plate fabrication panel and forming an integrated power electronics embedded PCBcold plate fabrication panel. The integrated power electronics embedded PCBcold plate fabrication panel is cut into a plurality of highly integrated power electronics embedded PCBcold plate assemblies such that the plurality of highly integrated power electronics embedded PCBcold plate assemblies individually include an integrated power electronics embedded PCB attached to and in thermal communication with a cold plate. Also, the cold plate can include a fluid chamber configured for a cooling fluid to flow therethrough.

A fluid transfer system is described. The fluid transfer system includes an active element, a structural element coupled with the active element, and a cushion. The active element has a leading edge and is configured to undergo vibrational motion. The cushion is between the leading edge of the active element and a portion of the structural element. The cushion mitigates collisions between the portion of the structural element and the leading edge of the active element.

A semiconductor package structure include a silicon substrate, a plurality of dies on the silicon substrate, a mold layer between the plurality of dies, a metal layer covering an upper side of the mold layer and at least a part of upper sides of each of the plurality of dies, and including an opening that exposes a part of the upper side of at least one die among the plurality of dies, and a temperature controller configured to control a temperature of the plurality of dies, the temperature controller including a body defining a circulation region configured to circulate a fluid for controlling the temperature of the plurality of dies, and a passage part configured to allow the fluid to flow into or out of the circulation region, and the fluid in the circulation region being in direct contact with exposed upper sides of the plurality of dies.

A semiconductor package structure include a silicon substrate, a plurality of dies on the silicon substrate, a mold layer between the plurality of dies, a metal layer covering an upper side of the mold layer and at least a part of upper sides of each of the plurality of dies, and including an opening that exposes a part of the upper side of at least one die among the plurality of dies, and a temperature controller configured to control a temperature of the plurality of dies, the temperature controller including a body defining a circulation region configured to circulate a fluid for controlling the temperature of the plurality of dies, and a passage part configured to allow the fluid to flow into or out of the circulation region, and the fluid in the circulation region being in direct contact with exposed upper sides of the plurality of dies.

Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die having a surface; a template structure having a first surface and an opposing second surface, wherein the first surface of the template structure is coupled to the surface of the first die, and wherein the template structure includes a cavity at the first surface and a through-template opening extending from a top surface of the cavity to the second surface of the template structure; and a second die within the cavity of the template structure and electrically coupled to the surface of the first die by interconnects having a pitch of less than 10 microns between adjacent interconnects.

A semiconductor package includes a substrate, a package structure, and a lid structure. The package structure is bonded over the substrate. The lid structure is bonded over the substrate and thermally coupled to the package structure, wherein the lid structure includes a fluid chamber and a plurality of spring members disposed in the fluid chamber, wherein each of the plurality of spring members is connected between an upper plate and a lower plate of the fluid chamber.

Provided is a semiconductor package including a first semiconductor chip, an inter-chip die on the first semiconductor chip in a first direction perpendicular to an upper surface of the first semiconductor chip, and a second semiconductor chip on the inter-chip die in the first direction, and the inter-chip die includes a first surface configured to face the first semiconductor chip, a second surface configured to face the second semiconductor chip, and a trench at least partially defined by the inter-chip die, the trench recessed in the first surface toward the second surface.

Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, containing gallium, the conductive substrate having a larger area than the oxide semiconductor film.

A 3D integrated circuit device can include a substrate, a thermal interface layer and at least one die, at least one device layer bonded between the thermal interface layer and the at least one die, wherein the thermal interface layer enhances conductive heat transfer between the at least one device layer and the at least one die, and a heat sink located adjacent to a heat spreader, wherein the thermal interface layer, the at least one die and the at least one device layer are located between the heat spreader and the substrate.

A power module include at least one substrate including an insulating layer and a metal circuit disposed on a first side of the insulating layer, a semiconductor chip, and at least one vapor chamber including a fluid flowing therein and disposed between the semiconductor chip and one of the at least one substrate, wherein each of the at least one vapor chamber includes a first side thereof including a plane area greater than or equal to a plane area of the semiconductor chip and connected to the metal circuit of the one of the at least one substrate, and a second side thereof facing the first side along a first direction and connected to the semiconductor chip.