According to an embodiment, a substrate processing method includes forming a liquid film on a substrate including a first region provided with a first film on an outermost surface thereof and a second region provided with a second film on an outermost surface thereof, the first film and the second film being different from each other in material. The method further includes forming a solidified film by solidifying the liquid film. The method further includes causing the solidified film on the first region to melt prior to the solidified film on the second region.

A method includes receiving a first notification that a process chamber of a baking apparatus entered an idle state, determining that a low-flow-rate (LFR) mode can be started, and providing an incoming gas to the process chamber. The incoming gas includes a first portion of a supply gas. The method further includes setting a flow rate of the incoming gas to an idle incoming flow rate, receiving a second notification that the process chamber entered an active state, determining that a high-flow-rate (HFR) mode can be started, and setting the flow rate of the incoming gas to a process incoming flow rate. The process incoming flow rate is greater than the idle incoming flow rate.

The disclosure provides a temperature compensation system, including a cavity, a temperature feedback module, a heating plate, a main heating module, a multi-zone temperature control module, a distributed temperature control module and at least one auxiliary temperature adjustment module, wherein at least one temperature control compensation area is arranged at a bottom surface of the heating plate, and the auxiliary temperature adjustment module and the temperature control compensation area are arranged in a correspondence manner; the temperature feedback module performs temperature detection on the heating plate to obtain a first temperature value and a second temperature value; the multi-zone temperature control module controls the main heating module to perform temperature adjustment on the heating plate according to the first temperature value, and the distributed temperature control module controls the auxiliary temperature adjustment module to perform temperature compensation adjustment on the temperature control compensation area according to the second temperature value. Complicated outgoing design is avoided, less volume space is occupied, the cost is reduced and the temperature control accuracy is high. The disclosure further provides a semiconductor device and a temperature compensation method.

A batch processing oven includes a processing chamber, a magnet, and a rack. The processing chamber includes a gas inlet on a first side and a gas outlet on a second side opposite the first side, the gas inlet is configured to direct a hot gas into the processing chamber and the gas outlet is configured to exhaust the convective energy in parallel with the radiative energy from the walls. The magnet is arranged such that its north pole will be formed on the first side of the processing chamber and its south pole will be formed on the second side of the processing chamber. The rack is configured to be positioned between the first and second ends of the processing chamber and is configured to support a plurality of vertically spaced-apart substrates.

Provided are nitride atomic layer etch including in situ generating a phosphoric acid on the surface of silicon nitride layer by reacting a phosphorus containing reactant with one or more oxidants. Phosphoric acid selectively etches silicon nitride layer over silicon oxide and/or silicon.

A substrate processing apparatus according to one embodiment includes a substrate holding part having a stage holding the substrate, a freezing solution supply part supplying the freezing solution to the substrate, a cooling part cooling the freezing solution to form a freezing film, and a thawing solution supply part having a nozzle extending in a first direction including a central part of the stage in a plan view, wherein an end and an other end opposite to the end of the nozzle in the first direction are located on an outer periphery outside of the central part, and the thawing solution supply part supplies a thawing solution having at least one of a different supply volume, temperature, or supply timing between the central part and the outer periphery to the substrate to thaw the freezing film.

Embodiments of an ion cryo-implantation process utilize a post implantation heating stage to heat the implanted wafer while under the heavy vacuum used during cryo-implantation. The implanted wafer is then transferred to load locks which are held at a lesser vacuum than the heavy vacuum.

A substrate processing method includes providing a substrate formed with a stacked film including at least an etching target film, an underlying layer disposed below the etching target film, and a mask disposed above the etching target film; etching the etching target film through the mask using plasma; and performing heat treatment on the substrate at a predetermined temperature after the etching. At least one of the mask and the underlying layer contains a transition metal.

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a first plurality of apertures and a second plurality of apertures. The systems may include a plurality of lid stacks equal to a number of the first plurality of apertures. Each lid stack may include a choke plate seated on the lid plate along a first surface of the choke plate. The choke plate may define a first aperture axially aligned with an associated aperture of the first plurality of apertures. The choke plate may define a second aperture axially aligned with an associated aperture of the second plurality of apertures. The choke plate may define protrusions extending from each of a top and bottom surface of the choke plate that are arranged substantially symmetrically about the first aperture.

Embodiments of the present disclosure herein include an apparatus for processing a substrate. More specifically, embodiments of this disclosure provide a substrate support assembly that includes an electrostatic chuck (ESC) assembly. The ESC assembly comprises a cooling base having a top surface and an outer diameter sidewall, an ESC having a substrate support surface, a bottom surface and an outer diameter sidewall, the bottom surface of the ESC coupled to the top surface of the cooling base by an adhesive layer. The substrate support assembly includes a blocking ring disposed around the outer diameter sidewalls of the cooling base and ESC, the blocking ring shielding an interface between the bottom surface of the ESC and the top surface of the cooling base.