Disclosed is a support unit. The support unit that supports a substrate may include a chuck stage that is rotatable, a heating member disposed above the chuck stage and that heats the substrate supported by the support unit, a power source that applies electric power to the heating member, a window disposed above the chuck stage and defining an interior space, in which the heating member is disposed, and an interlock module that selectively cuts off the electric power applied to the heating member.

Proposed are a wafer heating apparatus and a wafer processing apparatus using the same. More particularly, proposed are a wafer heating apparatus having an improved structure to enable efficient cooling of a terminal block, and a wafer processing apparatus using the same. A wafer heating apparatus for heating a wafer according to one embodiment includes a heater disposed below the wafer and configured to serve as a heat source, a cooling plate disposed below the heater and configured to provide cool air, and a terminal block configured to supply power to the heater and having a lower end portion in contact with the cooling plate.

The present invention provides a substrate treating apparatus including: a support unit supporting and rotating the substrate in a treatment space; a liquid supply unit supplying a liquid to the substrate supported by the support unit; and an irradiating module irradiating light to the substrate supported by the support unit, in which the irradiating module includes: a housing having an accommodation space; a laser unit located in the accommodation space, and including a laser irradiation unit irradiating laser light, and an irradiation end having one end protruding from the housing and irradiating the laser light irradiated from the laser irradiation unit to the substrate supported by the support unit; and a cooling unit located in the accommodation space and cooling the laser irradiation unit.

A method includes selecting a state model control, as an operational state of the heater, from among a plurality of state model controls, measuring an electrical characteristic of the heater, where the electrical characteristic includes at least one of an electric current and a voltage, and controlling power to the heater based on the selected operational state and based on the measured electrical characteristic.

A method for providing a substrate coating comprises transferring a substrate to an enclosed ink jet printing system; printing organic material in a deposition region of the substrate using the enclosed ink jet printing system, the deposition region comprising at least a portion of an active region of a light-emitting device on the substrate; loading the substrate with the organic material deposited thereon to an enclosed curing module; supporting the substrate in the enclosed curing module, the supporting the substrate comprising floating the substrate on a gas cushion established by a floatation support apparatus; and while supporting the substrate in the enclosed curing module, curing the organic material deposited on the substrate to form an organic film layer.

A heat treatment apparatus is a heat treatment apparatus managing a dummy wafer. The heat treatment apparatus includes: a heat treatment part performing a heat treatment on the dummy wafer; a damage detection part detecting a damage of the dummy wafer; and a controller determining whether or not the dummy wafer can be used based on damage information detected by the damage detection part.

A substrate processing apparatus, includes: a rotary holder configured to hold and rotate a substrate; a processing liquid supply configured to supply a processing liquid to the substrate held and rotated by the rotary holder; a heater including a heat source configured to heat the substrate or the processing liquid in contact with the substrate in a non-contact manner; a temperature measurer arranged at a position facing the rotary holder and configured to measure a temperature of a heating target object heated by the heater in a non-contact manner; and a stop controller configured to stop supply of electric power to the heater when it is determined that the temperature measured by the temperature measurer exceeds a preset temperature.

A pedestal configured to deposit material on a substrate includes a stem portion of the pedestal and a base portion of the pedestal mounted to the stem portion of the pedestal. The base portion includes an array of optical elements configured to emit light to optically heat the substrate.

A device for recycling sulfuric acid is provided. A container has an inner space. An inlet is located on the first side of the container for introducing a liquid containing sulfuric acid and hydrogen peroxide through a pump. An outlet is located on the second side of the container for exhausting the treated liquid from the container, and the first side and the second side are opposite sides. IR lamp and UV lamp are located in the inner space of the container for making contact with the liquid. IR radiation emitted from the IR lamp and UV radiation emitted from the UV lamp decompose the hydrogen peroxide in the liquid to water and oxygen. The IR radiation heats the liquid to 90 C. to 130 C., and the oxygen is exhausted through the air hole.

An apparatus includes a processing chamber, a substrate support in the processing chamber, a plasma source coupled to the processing chamber, and a plurality of heating devices arranged on the processing chamber. Each heating device is configured to emit laser beam on a substrate positioned on the substrate support to heat the substrate.