Embodiments of the present disclosure relate to modular flow chamber kits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body at least partially defining a processing volume. The chamber body includes a plurality of inject passages arranged in a plurality of flow levels, and one or more exhaust passages formed in the chamber body. The processing chamber includes one or more heat sources operable to heat the processing volume, a substrate support disposed in the processing volume, and a plate spaced from the substrate support. The substrate support and the plate are movable by at least one flow level of the plurality of flow levels to align the substrate support between one or more first inject passages of a first flow level and one or more second inject passages of a second flow level.

Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

A substrate processing apparatus includes a hydrophobizing part configured to perform a hydrophobizing process of forming a hydrophobic film on a front surface of a substrate through vapor deposition of a hydrophobizing gas, an ultraviolet radiation part configured to radiate ultraviolet rays to a removal area on a rear surface of the substrate so as to remove the hydrophobic film formed in the removal area in the hydrophobizing process, and a resin-film forming part configured to form a fluororesin film in the removal area after the hydrophobic film is removed.

Provided is an apparatus for processing a substrate, the apparatus including: a liquid treatment chamber; a drying chamber; and a light treatment chamber, in which the light treatment chamber includes: a treatment housing having a treatment space in which the substrate is processed; a support member for supporting the substrate in the treatment space; a light source for irradiating the substrate supported on the support member with light in the form of pulses; and a light filter for selecting a set range of wavelengths of the light generated by the light source and allowing the selected wavelengths to pass through.

A temperature measurement method includes: a radiation temperature measurement step for detecting a brightness temperature of a semiconductor wafer from obliquely below the semiconductor wafer; an input parameter calculation step for calculating at least two input parameters from the brightness temperature detected in the radiation temperature measurement step, the at least two input parameters including a first input parameter corresponding to an emissivity ratio of the semiconductor wafer and a second input parameter corresponding to a temperature of the semiconductor wafer; an output parameter estimation step for estimating an output parameter from the first input parameter and the second input parameter; and a temperature calculation step for calculating the temperature of the semiconductor wafer from the output parameter estimated in the output parameter estimation step and the brightness temperature detected in the radiation temperature measurement step.

Disclosed herein are a warpage control method and system for warpage control included in a processing chamber. The warpage control method includes heating a substrate by a heating assembly comprising a plurality of independently controllable heating zones, measuring a backside temperature of a susceptor based on radiation at a first wavelength, measuring a topside temperature of the substrate based on radiation at a second wavelength, measuring a curvature of the substrate based on radiation at a third wavelength, and controlling the heating assembly based on the backside temperature, the topside temperature, and the curvature. The warpage control system includes a first thermal sensor and an warp sensor disposed above a substrate, a second thermal sensor disposed below the substrate, a heating assembly, and a controller coupled with the heating assembly, the first thermal sensor, the second thermal sensor, and the warp sensor for controlling the warpage of the substrate.

The invention relates to an injector configured for arrangement within a reaction chamber of a substrate processing apparatus to inject gas in the reaction chamber. The injector may be elongated along a first axis and configured with an internal gas conduction channel extending along the first axis and provided with at least one gas entrance opening and at least one gas exit opening. The injector may have a width extending along a second axis perpendicular to the first axis substantially larger than a depth of the injector extending along a third axis perpendicular to the first and second axis. The wall of the injector may have a varying thickness.

Disclosed herein are a processing chamber and a method for processing a SiC substrate. The processing chamber includes a gas showerhead; a susceptor disposed below the gas showerhead, the gas showerhead configured to flow a process gas toward the susceptor; a protective region disposed below the susceptor; and a heating assembly having a front side facing directly a backside of the susceptor. The heat assembly further includes a plurality of lamps. Both the backside of the susceptor and the front side of the heating assembly are exposed to the protective region. The lamps are also exposed to the protective region. The processing chamber includes a chamber body formed by a lid shielded by a lid liner, an upper side section shielded by a side liner, a lower side section, and a bottom section. The lid includes cooling channels. The upper side section also includes cooling channels.

Herein disclosed are systems and methods related to solid source chemical sublimator vessels and corresponding deposition modules. The solid source chemical sublimator can include a housing configured to hold solid chemical reactant therein. A lid may be disposed on a proximal portion of the housing. The lid can include a fluid inlet and a fluid outlet and define a serpentine flow path within a distal portion of the lid. The lid can be adapted to allow gas flow within the flow path. The solid source chemical sublimator can include a filter that is disposed between the serpentine flow path and the distal portion of the housing. The filter can have a porosity configured to restrict a passage of a solid chemical reactant therethrough.

A manufacturing method of a chip-attached substrate includes preparing a stacked substrate including multiple chips, a first substrate to which the multiple chips are temporarily bonded, and a second substrate bonded to the first substrate with the multiple chips therebetween; and separating the multiple chips bonded to the first substrate and the second substrate from the first substrate to bond the multiple chips to one surface of a third substrate including a device layer.