A method includes patterning a metal layer on a substrate to form two metal lines spaced apart from each other by a recess, forming a directed self-assembly (DSA) segment in the recess, wherein the DSA segment includes block co-polymer (BCP), performing a phase separation process on the DSA segment to cause two components of the BCP to separate from each other to form a first polymer block and a second polymer block that are aligned next to each other in the recess, and removing the second polymer block to form an air gap that is bordered by the first polymer block and that is located between the metal lines.

Methods for etching metal, such as for processing a metal gate, are provided. A method includes forming a hard mask over the metal, wherein the hard mask includes a sidewall defining an opening; and performing a plasma etching process including cycles of depositing a carbon nitride film on the sidewall and etching the metal.

Methods of depositing a reflowable polymeric film on a semiconductor substrate are described. Exemplary processing methods may include flowing a first precursor over a semiconductor substrate to form a first portion of polymeric film on the structure. The methods may include removing a first precursor effluent from the semiconductor substrate. A second precursor may then be flowed over the semiconductor substrate to react with the first portion of the polymeric film. The methods may include removing a second precursor effluent from the semiconductor substrate. The methods may include reflowing the polymeric film by exposing the polymeric film to a heat treatment.

Methods of depositing thermally conductive polymeric films are described. Each of the methods include flowing a first precursor over a substrate; removing a first precursor effluent comprising the first precursor; flowing a second precursor over the substrate to react with the first precursor to form the polymeric film on the substrate; and removing a second precursor effluent comprising the second precursor. The methods may include performing a metal deposition process. The methods may include performing a post-treatment process, such as a heat treatment process.

The present invention provides an electronic or electrical device or component thereof comprising a cross-linked polymeric coating on a surface of the electronic or electrical device or component thereof; wherein the cross-linked polymeric coating is obtainable by exposing the electronic or electrical device or component thereof to a plasma comprising a monomer compound and a crosslinking reagent for a period of time sufficient to allow formation of the cross-linked polymeric coating on a surface thereof.