A semiconductor processing tool includes: a process chamber containing a wafer mount configured to hold a semiconductor wafer; a roughing pump; a pipe connecting the roughing pump to the process chamber; and a hot gas source configured to inject a hot gas into the pipe connecting the roughing pump to the process chamber. A method of semiconductor processing includes rough pumping a process chamber using a roughing pump and, during the rough pumping, injecting a hot gas into a pipe through which the roughing pump performs the rough pumping of the process chamber. After the rough pumping, semiconductor wafer processing is performed using the process chamber. During the semiconductor wafer processing, the process chamber is pumped using a high-vacuum pump backed by the roughing pump.

A SiC semiconductor device manufacturing method includes a step of etching a surface of a SiC substrate 1 with H.sub.2 gas under Si-excess atmosphere within a temperature range of 1000 C. to 1350 C., a step of depositing, by a CVD method, a SiO.sub.2 film 2 on the SiC substrate 1 at such a temperature that the SiC substrate 1 is not oxidized, and a step of thermally treating the SiC substrate 1, on which the SiO.sub.2 film 2 is deposited, in NO gas atmosphere within a temperature range of 1150 C. to 1350 C.

The present disclosure describes a method for fabricating semiconductor structures having transistor arrays with different pitches. The method can include forming a first and second arrays of structures on a semiconductor substrate. The second array of structures can be blocked with a first mask while exposing the first array. A first treatment can be applied to the first array of structures. The first array of structures can be blocked with a second mask while exposing the second array of structures. A second treatment can be applied to the second array of structures, where the second treatment is different from the first treatment.

An etching method and a plasma processing apparatus form a recess with an intended shape. The etching method includes (a) providing a substrate, the substrate including a silicon-containing film and a mask on the silicon-containing film; (b) etching the silicon-containing film with a first plasma to form a recess, the first plasma generated from a first process gas; (c) supplying a second plasma to the substrate, the second plasma generated from a second process gas comprising tungsten; and (d) etching the recess with a third plasma generated from a third process gas.

A method includes providing a substrate having a first semiconductor material; creating a mask that covers an nFET region of the substrate; etching a pFET region of the substrate to form a trench; epitaxially growing a second semiconductor material in the trench, wherein the second semiconductor material is different from the first semiconductor material; and patterning the nFET region and the pFET region to produce a first fin in the nFET region and a second fin in the pFET region, wherein the first fin includes the first semiconductor material and the second fin includes a top portion over a bottom portion, wherein the top portion includes the second semiconductor material, and the bottom portion includes the first semiconductor material.

A plasma processing apparatus includes a plasma processing chamber; a substrate support; a lower electrode; an RF power supply; and an upper electrode assembly. The upper electrode assembly includes a gas diffusion plate; an insulating plate; and an upper electrode plate arranged between the gas diffusion plate and the insulating plate, and having a plurality of first through holes and a plurality of second through holes. The insulating plate includes an inner annular protrusion and an outer annular protrusion protruding downward from a lower surface of the insulating plate, and the insulating plate has a plurality of first gas introduction holes, a plurality of second gas introduction holes, and a plurality of third gas introduction holes.

Methods for the fabrication of semiconductor devices are disclosed. A method may include depositing a mask layer on a substrate, forming a protection layer on the mask layer, and modifying the protection layer such that a porosity of the protection layer is reduced. Modifying the protection layer may include densifying the protection layer. Modifying the protection layer may include reducing the protection layer using a hydrogen plasma. The method may include etching the protection layer and the substrate. Etching may include etching, forming the protection layer, and modifying the protection layer in a predetermined number of cycles.

A plasma processing method includes (a) forming a first protective film on a surface of an inner member of a chamber by a first processing gas including a precursor gas that does not contain halogen; and (b) performing plasma processing on a processing target that is carried in inside the chamber by a plasma of a second processing gas after the first protective film is formed on the surface of the member.

Embodiments herein relate to methods, apparatus, and systems for selectively etching a substrate. The substrate typically includes one or more layers of silicon and one or more layers of silicon germanium. The method may involve receiving the substrate in a process chamber; exposing the substrate to F.sub.2; and exposing the substrate to an additive, where exposing the substrate to F.sub.2 and to the additive results in selectively etching the silicon germanium compared to the silicon, and where the substrate is not exposed to plasma while exposed to F.sub.2. Use of the additive produces a more uniform etch rate for the material being etched than would otherwise be achieved in the absence of the additive.

An etching method comprises (a) providing a substrate in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film; and (b) etching the silicon-containing film, including (b-1) etching the silicon-containing film using plasma generated from a first process gas, the first process gas containing a hydrogen fluoride gas and a reaction control gas to control a reaction between hydrogen fluoride and the silicon-containing film, the first process gas containing, as the reaction control gas, at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction, and (b-2) etching the silicon-containing film using plasma generated from a second process gas, the second process gas containing a hydrogen fluoride gas, and containing at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction.