A method for supplying processing liquid is configured to adjust the supply amount of silica by a processing liquid supply unit in order to improve a selectivity ratio in a substrate treatment process through the processing liquid, to mix processing liquid substances, to adjust the concentration and temperature of the processing liquid on the basis of a substrate processing condition to supply the processing liquid to a substrate processing apparatus, to recover the processing liquid through a processing liquid recycling unit spatially separated from a processing liquid supply unit and to adjust the concentration of moisture and temperature of the processing liquid, and to supply the recycled processing liquid.

According to the present invention, a substrate W is provided with a recess 95. The width of the recess 95 is smaller than the depth of the recess 95. An etching target which is at least one of a single crystal of silicon, a polysilicon and an amorphous silicon is exposed in at least a part of the upper part of a lateral surface 95s and in at least a part of the lower part of the lateral surface 95s. The etching target is etched by supplying an alkaline first etching liquid, in which an inert gas is dissolved, to the substrate W. The etching target is etched by supplying an alkaline second etching liquid, in which a dissolution gas is dissolved, and which has a dissolved oxygen concentration higher than that of the first etching liquid, to the substrate W before or after the first etching liquid is supplied to the substrate W.

Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

The technical scope of the present disclosure provides a substrate processing apparatus including a first supply unit and a second supply unit each configured to spray a fluid onto a substrate seated on a substrate support unit, wherein the first supply unit includes a first supporter that is connected to a first support shaft configured to rotate so that the first supporter rotates integrally with the first support shaft; a connection member connected to the first supporter and bent by a first angle in a direction parallel to an upper surface of the substrate; and a first nozzle connected to the connecting member and bent at a predetermined angle toward the substrate, and the first supporter is configured to rotate by a second angle in a direction parallel to the upper surface of the substrate.

An etching device includes a stage on a target substrate, and a nozzle part opposing the stage with the target substrate therebetween. The stage includes a first surface parallel to a plane defined by a first direction and a second direction crossing the first direction, and a second surface parallel to a third direction which forms a first angle with the second direction, and the second surface includes a first side parallel to the first direction, and a second side opposing the first side in the third direction and adjacent to the first surface. The nozzle part includes a (1-1)-th nozzle, a (1-2)-th nozzle spaced apart from the (1-1)-th nozzle in the first direction, and a (2-1)-th nozzle disposed between the (1-1)-th nozzle and the (1-2)-th nozzle.

The present disclosure relates to a contamination controlled semiconductor processing system. The contamination controlled semiconductor processing system includes a processing chamber, a contamination detection system, and a contamination removal system. The processing chamber is configured to process a wafer. The contamination detection system is configured to determine whether a contamination level on a surface of the door is greater than a baseline level. The contamination removal system is configured to remove contaminants from the surface of the door in response to the contamination level being greater than the baseline level.

A method of etching a thin film includes: a first puddling operation of forming a first puddle of a chemical solution on a substrate by supplying and spreading the chemical solution on the substrate on which a thin film is formed; a first etching operation of partially etching the thin film using the chemical solution on the substrate; a first rinsing operation of supplying the chemical solution onto the substrate to rinse off the first puddle of the chemical solution and apply the chemical solution onto the substrate; a second puddling operation of forming a second puddle of the chemical solution on the substrate; a second etching operation of partially etching the thin film; and a second rinsing operation of supplying the chemical solution onto the substrate to rinse off the second puddle of the chemical solution on the substrate and apply the chemical solution on to the substrate.

In a substrate holder, a gas supply part sends out a gas to the space between the lower surface of a substrate and a base surface of a base part to form a radially outward airflow. A division plate is arranged radially outward of the outer peripheral edge of the substrate on the base surface of the base part to surround the substrate. The inner peripheral edge of the division plate and the outer peripheral edge of the substrate face each other in the radial direction with a space in between. The upper surface of the division plate is located below or at the same position in the up-down direction as the upper surface of the substrate. An annular passage is provided between the lower surface of the division plate and the base surface of the base part.

According to the present invention, a substrate is surrounded in a horizontal plane on an upper surface of a substrate support by a first abutting member located at a first reference position, a second abutting member located at a second reference position, and a third abutting member located at a third reference position. The three abutting members make tiny movements repeatedly to get closer to the substrate gradually while distances from the center of the substrate support are kept equally. While the abutting members make the movements of getting closer to the substrate, the abutting members abut on the substrate successively to move the substrate horizontally toward the center of the substrate support. As a result, at a time when the substrate is nipped with the three abutting members, the center of the substrate is aligned with the center of the substrate support to complete a centering operation.

In the substrate processing apparatus and method according to the present invention, a suction region of a chuck body is surrounded by the annular elastic part of a packing. Before a lower surface center of a substrate and the suction region of the chuck body are held in close contact, the annular elastic part is deformed to follow and held in close contact with a lower surface of the substrate while surrounding the lower surface center of the substrate. Thus, suction leak hardly occurs, and the substrate is sucked and held by the suction region not only when the substrate is not warped, but also when the substrate is warped. Thus, the substrate can be processed with a processing liquid while being sucked and held with a suction force capable of sufficiently withstanding the rotation of the substrate.