This document describes wet chemical etching systems designed to apply etching chemistry to a substrate's surface. The system, in some examples, includes a rotor that grips and rotates the substrate, in conjunction with a weir that forms a crest of wet chemistry beneath it. As the substrate rotates, surface tension draws the wet chemistry onto its surface. The system may also include a controller that manages the substrate's movement through different positions.

A substrate processing method includes preparing a substrate including a silicon layer, which is an example of an etching target that is at least one of silicon and polysilicon; and etching the etching target by supplying the substrate with hot AOM, which is an example of high-temperature ammonia water having a temperature higher than room temperature and an increased dissolved oxygen concentration.

A substrate processing apparatus includes: a rotational holding unit; a bottom surface ejection nozzle; a bottom surface supply pipe; a heating unit; a flow rate adjustment unit; and a control device. The control device includes a temperature control unit that controls the flow rate adjustment unit to eject the processing liquid to a height that does not reach the bottom surface of the substrate, in a state where the rotational holding unit holds the substrate, thereby increasing a temperature of the bottom surface supply pipe, and a processing control unit that after the temperature of the bottom surface supply pipe is increased, controls the flow rate adjustment unit to eject the processing liquid to a height that reaches the bottom surface of the substrate, thereby performing a processing of the substrate.

A training device includes an experimental data acquirer that acquires a first processing amount indicating a difference between a film thickness obtained before a process for a film and a film thickness obtained after the process for the film, after the process for the film is executed according to processing conditions including a variable condition indicating a relative position of a nozzle with respect to a substrate, with the relative position varying over time, a converter that converts the variable condition into compressed data and a model generator that generates a learning model, with the learning model executing machine learning using training data that includes the compressed data and the first processing amount corresponding to the processing conditions and predicting a second processing amount.

According to the present invention, a substrate is surrounded in a horizontal plane on an upper surface of a substrate support by a first abutting member located at a first reference position, a second abutting member located at a second reference position, and a third abutting member located at a third reference position. The three abutting members make tiny movements repeatedly to get closer to the substrate gradually while distances from the center of the substrate support are kept equally. While the abutting members make the movements of getting closer to the substrate, the abutting members abut on the substrate successively to move the substrate horizontally toward the center of the substrate support. As a result, at a time when the substrate is nipped with the three abutting members, the center of the substrate is aligned with the center of the substrate support to complete a centering operation.

A substrate processing apparatus may include a spin chuck, a process fluid supplied, and a negative pressure generator. The spin chuck may include a flat portion having a flat upper surface and a recess portion surrounded by the flat portion in a plan view, the recess portion having a recess upper surface, the spin chuck including a first inlet in the recess upper surface of the recess portion, the recess upper surface of the recess portion at a lower level than the flat upper surface of the flat portion. The process fluid supplier is configured to supply a process fluid onto a substrate loaded on the spin chuck. The negative pressure generator is configured to provide a first negative pressure through the first inlet in the recess upper surface of the recess portion.

A configuration of a substrate processing apparatus is downsized while enabling design of a pressure sensor into a desired shape in a space between an actuator and a nozzle body. A processing unit includes: a nozzle body configured to discharge a processing liquid toward a peripheral portion of a lower surface of a substrate; a shaft configured to advance and retract in a radial direction of the substrate by driving of a motor; a pressure sensor configured to obtain a pressure value caused between the motor and the nozzle body; and an origin position detection part configured to, when the pressure value becomes equal to or greater than a predetermined threshold, detect that the nozzle body has returned to its origin.

A display device includes a thin-film transistor, a source/drain electrode and an auxiliary electrode including a first conductive layer and a second conductive layer disposed on the first conductive layer, a via insulating layer having a first opening exposing the auxiliary electrode, a capping layer covering a portion of the auxiliary electrode and a light emitting material layer and a common electrode layer sequentially stacked on the via insulating layer and the capping layer, wherein the source/drain electrode is electrically connected to the thin-film transistor through a contact hole penetrating the interlayer insulating layer, the auxiliary electrode has an undercut, and the capping layer includes a first capping layer covering side surfaces of the first conductive layer of the auxiliary electrode and a second capping layer separated from the first capping layer and disposed on the second conductive layer of the auxiliary electrode.

A technique enabling wet etching of a first silicon oxide film with high selectivity with respect to a metal film and a second silicon oxide film is provided. A substrate processing method of wet-etching a substrate having a stacked structure including a metal film, a first silicon oxide film, and a second silicon oxide film having a moisture content lower than that of the first silicon oxide film is provided. The substrate processing method includes performing an etching while increasing etching selectivity of the first silicon oxide film with respect to the second silicon oxide film and the metal film by supplying an etching liquid, which is prepared by diluting sulfuric acid, hydrogen peroxide and hydrofluoric acid in an anhydrous organic solvent, to the substrate such that the metal film, the first silicon oxide film, and the second silicon oxide film are simultaneously exposed to the etching liquid.