An apparatus for treating a substrate of the present invention includes a buffer unit, an inversion unit, a first transfer chamber, a second transfer chamber, a first cleaning chamber, and a second cleaning chamber. The first transfer chamber, the inversion unit, and the second transfer chamber are sequentially arranged in one direction. The first cleaning chamber is disposed at one side of the first transfer chamber, and the second cleaning chamber is disposed at one side of the second transfer chamber. A first main transfer robot provided in the first transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the first cleaning chamber. The second main transfer robot provided in the second transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the second cleaning chamber.

A substrate treating apparatus includes: a spin chuck supporting a substrate; a rinse liquid supply unit supplying a rinse liquid; and a bowl member surrounding the spin chuck, wherein the bowl member includes: a first bowl including an inclined surface inclined downward in an outward direction and having an upper surface of which at least a portion has a curvature; and an upper base disposed on the first bowl, a space between the upper surface of the first bowl and a lower surface of the upper base forms a first flow passage and at least a portion of the first flow passage is formed in an arc shape along the upper surface of the first bowl, and the rinse liquid is supplied toward the inclined surface of the first bowl through the first flow passage.

A substrate processing method includes: a holding step of carrying a substrate into an inside of a chamber and holding said substrate; a supply step of supplying a fluid to the substrate on the inside of the chamber; an imaging step of sequentially imaging the inside of the chamber by a camera to acquire image data; a condition setting step of specifying a monitoring target and changing an image condition based on the monitoring target; and a monitoring step of performing a monitoring process on the monitoring target based on the image data having the image condition corresponding to the monitoring target.

A substrate processing method includes: a holding step of carrying a substrate into an inside of a chamber and holding said substrate; a supply step of supplying a fluid to the substrate on the inside of the chamber; an imaging step of sequentially imaging the inside of the chamber by a camera to acquire image data; a condition setting step of specifying a monitoring target and changing an image condition based on the monitoring target; and a monitoring step of performing a monitoring process on the monitoring target based on the image data having the image condition corresponding to the monitoring target.

In the method for cleaning a silicon wafer of this disclosure, an oxidizing agent is supplied in the surface layer modification process from a position shifted from the center of the silicon wafer in the radial direction. The method for producing a silicon wafer of this disclosure includes performing the above-mentioned method for cleaning a silicon wafer. When the silicon wafer of this disclosure is subjected to a given measurement, difference between maximum and minimum values of the thickness of the natural oxide film in the radial direction of the silicon wafer, when a thickness of the natural oxide film is normalized to a maximum value, is 0.1 or less.

The present disclosure relates to a substrate treatment apparatus including: a substrate-holding unit for holding and rotating a substrate; a treatment liquid feed unit for feeding treatment liquid to a top or underside of the substrate; a heating unit located under the substrate to heat the substrate; a blocking plate located on the substrate-holding unit above the heating unit; upper sensors located above the blocking plate to constitute one of a light transmitter and a light receiver; and lower sensors located under the blocking plate to constitute the other, wherein a quantity of light irradiated from the light transmitter and thus reaching the light receiver is measured to allow the light transmittance of the blocking plate to be obtained.

The present disclosure describes a chuck-based device and a method for cleaning a semiconductor manufacturing system. The semiconductor manufacturing system can include a chamber, a chuck housed in the chamber and configured to hold a substrate, and a control device configured to control a translational displacement and a rotation of the chuck. The chuck can include a passage extending along a periphery of the chuck and dividing the chuck into an inner portion and an outer sidewall portion, and a first multiple of openings through the outer sidewall portion of the chuck and interconnected with the passage. The passage can be configured to transport a fluid. The first multiple of openings can be configured to dispense the fluid.

Provided is a treatment liquid ejection method and apparatus capable of significantly increasing productivity and quality by greatly reducing a maintenance time of a head unit, the treatment liquid ejection method including (a) obtaining test image information by test-photographing a treatment liquid test-printed by a head unit, (b) generating nozzle-specific characteristic information by using the test image information, (c) generating print file information to be printed, in consideration of the nozzle-specific characteristic information, (d) reflecting recipe information of a substrate or the head unit to prepare the print file information in an outputtable state, and (e) printing, on the substrate by the head unit, the print file information to which the recipe information is reflected.

An active material separation device according to an embodiment of the present invention is an active material separation device configured to separate an active material from a battery member, which includes a container, a base member disposed in the container and configured to support the battery member, and a nozzle disposed above the container and configured to inject a liquid with respect to the battery member, and the nozzle injects the liquid in a state in which a position of an upper surface of the battery member is lower than a position of a liquid surface of the liquid.

A system for processing a semiconductor wafer is provided. The system includes a processing tool. The system also includes gas handling housing having a gas inlet and a gas outlet. The system further includes an exhaust conduit fluidly communicating with the processing tool and the gas inlet of the gas handling housing. In addition, the system includes at least one first filtering assembly and at least one second filtering assembly. The first filtering assembly and the second filtering assembly are positioned in the gas handling housing and arranged in a series along a flowing path that extends from the gas inlet to the gas outlet of the gas handling housing. Each of the first filtering assembly and the second filtering assembly comprises a plurality of wire meshes stacked on top of another.