The inventive concept provides a substrate treating apparatus. According to the inventive concept, the substrate treating apparatus treats the substrate by supplying a treating liquid on a rotating substrate. The exhaust unit exhausting an atmosphere of an inner space comprises: a first exhaust port introducing the atmosphere of the inner space, a first exhaust line provided to exhaust an atmosphere introduced through the first exhaust port in a first direction and a second exhaust port introducing the atmosphere of the inner space, and a second exhaust line provided to exhaust an atmosphere introduced through the second exhaust port in a second direction. The controller controls the support unit so an exhaust direction inside of the first exhaust line and the second exhaust line become a forward direction with respect to a rotation direction of the substrate.

A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.

The present invention provides a substrate treating apparatus including: a support unit supporting and rotating the substrate in a treatment space; a liquid supply unit supplying a liquid to the substrate supported by the support unit; and an irradiating module irradiating light to the substrate supported by the support unit, in which the irradiating module includes: a housing having an accommodation space; a laser unit located in the accommodation space, and including a laser irradiation unit irradiating laser light, and an irradiation end having one end protruding from the housing and irradiating the laser light irradiated from the laser irradiation unit to the substrate supported by the support unit; and a cooling unit located in the accommodation space and cooling the laser irradiation unit.

A substrate processing method includes: supplying a pre-wet liquid to a substrate while rotating the substrate, and forming a liquid film of the pre-wet liquid on a surface of the substrate; supplying a chemical liquid at a first flow rate to the substrate while the substrate is being rotated at a first rotation speed, and processing the substrate with the chemical liquid to form a liquid film of the chemical liquid having a first thickness on the surface of the substrate; and supplying the chemical liquid to the substrate at a second supply flow rate while the substrate is being rotated at a second rotation speed, and performing a second chemical liquid processing on the substrate with the chemical liquid to form a liquid film of the chemical liquid having a second thickness on the surface of the substrate.

A substrate processing apparatus includes a holding unit, a liquid supply unit, a collection unit, a circulation path, a gas supply unit, and a control unit. The holding unit holds a substrate. The liquid supply unit supplies a processing liquid to a first main surface of the substrate held by the holding unit. The collection unit collects the processing liquid used for processing the substrate. The circulation path returns the processing liquid collected by the collection unit back to the liquid supply unit. The gas supply unit supplies a gas to a second main surface to the substrate held by the holding unit in a direction opposite to the first main surface. The control unit supplies the gas to the second main surface when supplying the processing liquid to be returned to the liquid supply unit by the circulation path to the first main surface.

According to an embodiment, a substrate processing method includes forming a liquid film on a substrate including a first region provided with a first film on an outermost surface thereof and a second region provided with a second film on an outermost surface thereof, the first film and the second film being different from each other in material. The method further includes forming a solidified film by solidifying the liquid film. The method further includes causing the solidified film on the first region to melt prior to the solidified film on the second region.

A method for processing a bonded wafer includes forming a plurality of modified layers in a form of rings through positioning focal points of laser beams with a wavelength having transmissibility with respect to a first wafer inside the first wafer, from which a chamfered part and a notch are to be removed, from a back surface of the first wafer and executing irradiation, holding a second wafer side on a chuck table, and grinding the back surface of the first wafer to thin the first wafer. In forming the modified layer, the focal points of the laser beams are set in such a manner as to gradually get closer to a joining layer from an inner side toward an outer side of the first wafer in a radial direction to thereby form the modified layers as to widen toward the lower side.

A planar positioning stage has an integrated planar motion stage that is drivable to move to different locations on a plane, and a planar fixture stage contained within the integrated planar motion stage. Multiple coil assemblies are mounted on the integrated planar motion stage that are configured for electromagnetic interaction with magnets mounted on the planar fixture stage. The said electromagnetic interaction may selectively either couple the planar fixture stage to move together with the integrated planar motion stage or to decouple the planar fixture stage from the integrated planar motion stage to drive the planar fixture stage to move relative to the integrated planar motion stage.

A substrate processing apparatus includes a substrate holder for holding a substrate; a driving mechanism for driving a tool for processing the substrate held by the substrate holder; a housing that accommodates the substrate holder and the tool; and a sprayer for spraying a liquid to an inside of the housing in a form of mist.

In a substrate processing apparatus for supplying a processing liquid onto a substrate being rotated, to thereby process the substrate, an upper support body which is a placement member is separably placed on a lower support body for supporting the substrate. The upper support body is moved up and down by an up-and-down moving part. The upper support body includes a first contact part outside an outer periphery of the substrate in a radial direction. When a second contact part of the up-and-down moving part goes up, the second contact part comes into contact with the first contact part, to thereby move the upper support body up. When the second contact part goes down, the upper support body is placed on the lower support body and the second contact part is separated from the first contact part, and in this state, the lower support body is rotatable.