Disclosed is a substrate lifting device according to an embodiment which includes: a lift pin having one side supporting a substrate, and including a hollow line therein; a plate fixing the other side of the lift pin; a driving unit configured to move the chuck or the plate so that the lift pin moves along the pinhole; and sensors connected to the hollow line, and configured to transmit and receive signals through the hollow line.

A substrate processing apparatus includes a chamber, a substrate holding portion, and a moving mechanism. The chamber accommodates a substrate. The substrate holding portion is disposed in the chamber and holds the substrate one by one. The moving mechanism moves the substrate holding portion. The substrate holding portion includes a chuck pin that comes into contact with the substrate. The moving mechanism moves the substrate holding portion within the chamber between at least one processing position at which the substrate is processed with a processing liquid and a cleaning position at which the chuck pin is cleaned.

Apparatus and methods related to forming films on sidewalls of memory cell stacks in memory and logic devices. In one approach, a silicon wafer is held in a chamber of an atomic layer deposition (ALD) reactor. A temperature in the reactor is controlled to a first temperature (e.g., room temperature or below) where a first gas reactant that is provided into the chamber condenses and is adsorbed on the target wafer or substrate. The first reactant or precursor is partly vaporized at a second temperature in the reactor that is greater than the first temperature. A second gas reactant is provided into the chamber. The second gas reactant reacts with the adsorbed portion of the first gas reactant in its activated state. The reaction product is a film on the sidewall of a memory cell stack or logic devices. The foregoing steps are repeated to form a desired thickness of the film.

A substrate processing apparatus includes a chamber, a substrate holding portion, and a turning mechanism. The chamber has an opening through which the inside and the outside communicate with each other and a substrate is carried in and out. The substrate holding portion is disposed in the chamber and holds the substrate one by one. The turning mechanism turns the substrate holding portion to move the substrate holding portion between a plurality of processing positions at which the substrate is processed with the processing liquid in the chamber.

A substrate processing apparatus includes a chamber, a substrate holding portion, and a turning mechanism. The chamber has a first opening through which an inside and an outside communicate with each other and a substrate is carried in, and a second opening through which the inside and the outside communicate with each other and the substrate is carried out. The substrate holding portion is disposed in the chamber and holds the substrates one by one. The turning mechanism turns the substrate holding portion to move the substrate holding portion between a plurality of processing positions at which the substrate is processed with a processing liquid in the chamber.

A substrate processing apparatus includes a substrate holding portion, an immersion bath, a first supplying portion, and a moving mechanism. The substrate holding portion holds and rotates a substrate. The immersion bath stores a processing liquid, accommodates the substrate, and immerses the substrate in the processing liquid. The first supplying portion supplies the processing liquid to the immersion bath. The moving mechanism relatively moves the substrate holding portion and the immersion bath. The moving mechanism switches a state of the substrate between a non-immersion state in which the substrate is located outside the immersion bath and an immersion state in which the substrate is located inside the immersion bath and immersed in the processing liquid by moving the substrate holding portion or the immersion bath.

An apparatus including a multi-station processing chamber with a top plate and a bottom portion encloses stations each including a pedestal assembly. A spindle centrally located between the stations is configured to rotate about a central axis, and is electrically connected to the bottom portion. An actuator controls movement of the spindle in the Z-direction. An indexer connected to the spindle rotates with the spindle, and includes extensions each configured to interface with a corresponding substrate for substrate transfer. An electrically conductive interface movably connected to the top plate provides an RF return path. Another actuator coupled to the grounding interface controls movement of the electrically conductive interface in the Z-direction. The electrically conductive interface moves downwards in the Z-direction to make contact with the indexer when each of the plurality of extensions is parked and the spindle is moved to a lower position during plasma processing.

A substrate processing apparatus according to one embodiment includes a substrate holding part having a stage holding the substrate, a freezing solution supply part supplying the freezing solution to the substrate, a cooling part cooling the freezing solution to form a freezing film, and a thawing solution supply part having a nozzle extending in a first direction including a central part of the stage in a plan view, wherein an end and an other end opposite to the end of the nozzle in the first direction are located on an outer periphery outside of the central part, and the thawing solution supply part supplies a thawing solution having at least one of a different supply volume, temperature, or supply timing between the central part and the outer periphery to the substrate to thaw the freezing film.

There is provided a technique that includes: forming a film on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) supplying a precursor from a first supplier to the substrate and exhausting the precursor from an exhaust port installed opposite to the first supplier with the substrate interposed between the exhaust port and the first supplier; and (b) supplying a reactant from a second supplier to the substrate and exhausting the reactant from the exhaust port, wherein in (a), inert gas is supplied into the process chamber from a third supplier installed at a region, which is a region on a side of the exhaust port among a plurality of regions partitioned in the process chamber by a bisector perpendicular to straight line connecting the first supplier and the exhaust port in a plane view.

An apparatus for treating a substrate of the present invention includes a buffer unit, an inversion unit, a first transfer chamber, a second transfer chamber, a first cleaning chamber, and a second cleaning chamber. The first transfer chamber, the inversion unit, and the second transfer chamber are sequentially arranged in one direction. The first cleaning chamber is disposed at one side of the first transfer chamber, and the second cleaning chamber is disposed at one side of the second transfer chamber. A first main transfer robot provided in the first transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the first cleaning chamber. The second main transfer robot provided in the second transfer chamber directly transfers the substrate between the buffer unit, the inversion unit, and the second cleaning chamber.