A substrate treating apparatus includes: a spin chuck supporting a substrate; a rinse liquid supply unit supplying a rinse liquid; and a bowl member surrounding the spin chuck, wherein the bowl member includes: a first bowl including an inclined surface inclined downward in an outward direction and having an upper surface of which at least a portion has a curvature; and an upper base disposed on the first bowl, a space between the upper surface of the first bowl and a lower surface of the upper base forms a first flow passage and at least a portion of the first flow passage is formed in an arc shape along the upper surface of the first bowl, and the rinse liquid is supplied toward the inclined surface of the first bowl through the first flow passage.

An apparatus for treating a substrate includes a support unit that supports the substrate and a nozzle that dispenses liquid plasma to etch a film formed on the substrate supported on the support unit.

A load port control unit performs an opening operation of a sealable container according to a first operation procedure when a sensor has detected a normal placement of the sealable container, and retries the opening operation according to a second operation procedure for being able to more reliably perform the opening operation of the sealable container, to prevent a transfer device from stopping, when the sensor has detected a placement abnormality of the sealable container.

Conditions at the perimeter of the wafer may be characterized and used to adjust current stolen by the weir thief electrodes during a plating process to generate more uniform film thicknesses. An electrode may be positioned in a plating chamber near the periphery of the wafer as the wafer rotates. To characterize the electrical contacts on the seal, a wafer with a seed layer may be loaded into the plating chamber, and a constant current may be driven through the electrode into the conductive layer on the wafer. As an electrical characteristic of this current varies, such as a voltage required to drive a constant current, a mapping characterizing the seal quality or the openings in the mask layer may be generated.

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a lid plate seated on the chamber body. The lid plate may define a plurality of apertures. The systems may include a plurality of lid stacks. The systems may include a plurality of substrate supports. The systems may include a plurality of peripheral valves. Each peripheral valve may be disposed in one of the processing regions. Each peripheral valve may include a bottom plate coupled with the chamber body. The peripheral valve may include a bellow. The bellow may be coupled with the bottom plate. The peripheral valve may include a sealing ring having a body defining a central aperture. A bottom surface of the body may be coupled with the bellow. The body may define a recess having a diameter greater than that of a support plate of a substrate support.

Provided is a method capable of efficiently polishing the front and back sides of a carrier plate unused after manufacture, which is used in a double-sided polishing process for semiconductor wafers. The method comprises: sandwiching a carrier plate unused after manufacture and to be polished between an upper surface plate and a lower surface plate in the double-sided polishing apparatus, and supplying a polishing liquid while relatively rotating the carrier plate to be polished, the upper surface plate, and the lower surface plate to polish both sides of the carrier plate to be polished, wherein a polishing pad including, on its surface, an abrasive grain-containing layer in which abrasive grains of 2 m or more in grain size are embedded is used as a polishing pad in a double-sided polishing apparatus.

A wafer processing apparatus includes a rotating chuck rotatably installed on a driver, a vacuum chuck which is disposed on the rotating chuck and on which a wafer is seated, a chuck module installed in the rotating chuck to fix the wafer to the vacuum chuck, and a moving module configured to move the vacuum chuck or the chuck module to increase a gap between adjacent dies of the wafer.

A semiconductor device manufacturing device (10) includes a stage (12), an installing head (14) that has a chip holding surface (26) and disposes a chip (100) on a substrate (110), a measuring mechanism (16) that measures a tilt angle of the chip (100) loaded on an installing surface (112) of the substrate (110) by the installing head (14) with respect to the installing surface (112) as a detection tilt angle Sd, a holding surface adjusting mechanism (18) that changes a holding surface tilt angle Sb which is a tilt angle of the chip holding surface (26) with respect to a loading surface (21), and a controller (20) that calculates a correction amount C of the holding surface tilt angle Sb based on the detection tilt angle Sd and changes the holding surface tilt angle Sb by the holding surface adjusting mechanism (18) according to the calculated correction amount C.

There is provided a substrate processing apparatus comprising: a substrate transfer chamber having a floor provided with a first magnet; a substrate transfer module including a stage on which a substrate is placed, a traveling plate disposed below the stage, and a second magnet having a repulsive force with respect to the first magnet, the substrate transfer module being configured to be movable in the substrate transfer chamber by magnetic levitation using the repulsive force; and a substrate processing chamber disposed on an upper surface side of the substrate transfer chamber to process the substrate, the substrate processing chamber having an opening having a size that allows at least a part of the stage on which the substrate is placed to pass therethrough, the opening being open toward the inside of the substrate transfer chamber. The substrate is processed in a state where the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening by raising the substrate transfer module and the opening is closed by the traveling plate.

There is provided a substrate processing apparatus comprising: a substrate transfer chamber having a floor provided with a first magnet; a substrate transfer module including a stage on which a substrate is placed, a traveling plate disposed below the stage, and a second magnet having a repulsive force with respect to the first magnet, the substrate transfer module being configured to be movable in the substrate transfer chamber by magnetic levitation using the repulsive force; and a substrate processing chamber disposed on an upper surface side of the substrate transfer chamber to process the substrate, the substrate processing chamber having an opening having a size that allows at least a part of the stage on which the substrate is placed to pass therethrough, the opening being open toward the inside of the substrate transfer chamber. The substrate is processed in a state where the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening by raising the substrate transfer module and the opening is closed by the traveling plate.