Apparatus and methods to process one or more wafers are described. A spatial deposition tool comprises a plurality of substrate support surfaces on a substrate support assembly and a plurality of spatially separated and isolated processing stations. The spatially separated isolated processing stations have independently controlled temperature, processing gas types, and gas flows. In some embodiments, the processing gases on one or multiple processing stations are activated using plasma sources. The operation of the spatial tool comprises rotating the substrate assembly in a first direction, and rotating the substrate assembly in a second direction, and repeating the rotations in the first direction and the second direction until a predetermined thickness is deposited on the substrate surface(s).

Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

A transfer apparatus includes a first vacuum transfer module; a first transfer robot disposed in the first vacuum transfer module and at least one ring. In addition, a second vacuum transfer module is provided; and a second transfer robot is disposed in the second vacuum transfer module. A tubular connecting module is disposed between the first vacuum transfer module and the second vacuum transfer module. Further, the first vacuum transfer module, the second vacuum transfer module and the tubular connecting module are arranged along a first direction, with the tubular connecting module having a first length in the first direction, and the first length is smaller than the diameter of the wafer. A wafer support is rotatably attached to the tubular connecting module and at least three ring supporting members outwardly extend from the wafer support to support the at least one ring.

Disclosed is a wafer aligner device including a platform, a lifting gripper disposed on the platform to be lifted up or lowered down relative to the platform, a rotating gripper disposed on the platform to be rotated relative to the platform, a rangefinder disposed next to the platform, and a control module. The control module is electrically connected to the lifting gripper, the rotating gripper, and the rangefinder. The control module drives the lifting gripper to be lifted up or lowered down to transfer a wafer between the lifting gripper and the rotating gripper. When the wafer is disposed on the rotating gripper, the control module rotates the rotating gripper relative to the platform and drives the rangefinder to detect a change in a relative distance along an edge of the wafer so as to determine a position of a notch of the wafer.

A wafer aligner that includes a body, a stage, a stand, an optical module and a control module is provided. The stage is movably disposed on the body. The stand is vertically disposed on the body and partially suspended above the body to allow the stand and the body to form a detection space. A wafer is carried on the stage and driven by the stage to rotate relative to the body, and an edge of the wafer passes by the detection space. At least one surface of the detection space formed by the stand and the body is a light-absorbing surface. The optical module includes a light source and an image capture device. The light source is disposed in the body. The image capture device is disposed in the stand. The control module electrically connects the stage and the optical module.

An apparatus and method for debonding a pair of bonded wafers are disclosed herein. In some embodiments, the debonding apparatus, comprises: a wafer chuck having a preset maximum lateral dimension and configured to rotate the pair of bonded wafers attached to a top surface of the wafer chuck, a pair of circular plate separating blades including a first separating blade and a second separating blade arranged diametrically opposite to each other at edges of the pair of bonded wafers, wherein the first and the second separating blades are inserted between a first and a second wafers of the pair of bonded wafers, and at least two pulling heads configured to pull the second wafer upwardly so as to debond the second wafer from the first wafer.

A grinding apparatus for grinding a wafer includes a chuck table, a grinding unit, an elevating mechanism, a grinding water supply device, a spray nozzle, a thickness measuring device, and a controller to control spraying water from a spray nozzle toward the wafer so as to expand or contract the chuck table via the wafer and thereby changing a height of a holding surface such that warm water is sprayed toward a position, of which thickness value among thickness values measured by the thickness measuring device indicates a thickness greater than a preset target thickness, or a position, of which thickness value indicates a thickness greater than an average value of the thickness values; or cold water is sprayed toward a position, of which thickness value indicates a thickness less than the preset target thickness, or a position, of which thickness value indicates a thickness less than the average value.

In one embodiment, a module of a processing system is provided. The module of a processing system, includes a clamp assembly, and an alignment mechanism. The clamp assembly includes a first plate with a first inner surface and a first outer surface disposed opposite the first inner surface, and a second plate disposed about parallel to the first plate. The second plate includes a second inner surface facing the first inner surface of the first plate. The alignment mechanism includes a profile rod coupled to the second plate and a follower assembly coupled to the first plate. The follower assembly includes a connection element coupled to the first plate, a follower roller biased toward the profile rod, and an arm extending from the first plate toward the second plate, the arm includes an alignment roller disposed between the first plate and the second plate.

The present invention provides a tower lift. The tower lift includes: a rail module extended in a vertical direction; and a carriage module provided to be movable by a magnetic levitation method along the rail module, in which in the carriage module, a braking unit which brakes falling of the carriage module when power driving the tower lift is cut is installed.

A method for calibration including determining a temperature induced offset in a pedestal of a process module under a temperature condition for a process. The method includes delivering a wafer to the pedestal of the process module by a robot, and detecting an entry offset. The method includes rotating the wafer over the pedestal by an angle. The method includes removing the wafer from the pedestal by the robot and measuring an exit offset. The method includes determining a magnitude and direction of the temperature induced offset using the entry offset and exit offset.