Provided is a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing on a plurality of substrates in a process chamber defining a plurality of processing spaces. The substrate processing apparatus includes a process chamber in which N processing spaces are defined to process substrates, N gas injection units installed above the process chamber to respectively correspond to the N processing spaces, N substrate supports that face the gas injection units and support the substrates, a transfer support installed in the process chamber to support the substrates, a rotation support which is installed between the adjacent substrate supports that are substrate transfer paths according to rotation driving of the transfer support and on which the substrates are seated to be rotated about a vertical second rotation axis passing through the substrates.

A substrate processing method includes a processing film forming step in which a processing liquid is supplied to a front surface of a substrate to solidify or cure the processing liquid on the front surface of the substrate, thereby forming a processing film on the front surface of the substrate, an etching component forming step in which the processing film is subjected to etching component forming processing to form an etching component in the processing film, an etching step in which a surface layer portion of the substrate is etched by the etching component formed in the etching component forming step, and a processing film removing step in which a peeling liquid is supplied to a front surface of the processing film, thereby peeling the processing film from the front surface of the substrate and removing the processing film from the front surface of the substrate.

There is provided a technique for suppressing interference between processes respectively performed in the plurality of reactors. According to one aspect thereof, a substrate processing apparatus includes: a first vessel including a transfer port and a process chamber; a second vessel adjacent to the first vessel and communicating with the first vessel via the transfer port; a lid for closing the transfer port; a seal arranged between the transfer port and the lid; and a controller for controlling the inner pressure of the first vessel to be lower than the inner pressure of the second vessel with the transfer port closed by the lid while the substrate is processed in the process chamber and the inner pressure of the first vessel to be higher than the inner pressure of the second vessel after the substrate is processed and before the first vessel comes into communication with the second vessel.

A substrate processing apparatus includes a chamber, a substrate holder, an illuminator, a polarizing filter, a filter driver, a camera, and a controller. The illuminator irradiates an imaging region including a monitoring target in the chamber with illumination light. The filter driver rotates the polarizing filter to a rotation position corresponding to the monitoring target in the imaging region to reduce the unnecessary reflected light corresponding to the monitoring target using the polarizing filter. The camera captures an image of the imaging region through the polarizing filter to generate captured image data. The controller controls the filter driver, and monitors the monitoring target based on the captured image data generated by the camera.

In the substrate processing apparatus and method according to the present invention, a suction region of a chuck body is surrounded by the annular elastic part of a packing. Before a lower surface center of a substrate and the suction region of the chuck body are held in close contact, the annular elastic part is deformed to follow and held in close contact with a lower surface of the substrate while surrounding the lower surface center of the substrate. Thus, suction leak hardly occurs, and the substrate is sucked and held by the suction region not only when the substrate is not warped, but also when the substrate is warped. Thus, the substrate can be processed with a processing liquid while being sucked and held with a suction force capable of sufficiently withstanding the rotation of the substrate.

Provided is a substrate treating apparatus including a treating module, in which the treating module includes: a polishing treatment unit for polishing a substrate with a polishing pad; a cleaning treatment unit for cleaning the substrate by supplying a treatment liquid to the substrate; and a transfer chamber in which a transfer robot transferring the substrate is placed, a liquid treating chamber is provided in the cleaning treatment unit, the liquid treating chamber includes: a support unit for supporting and rotating the substrate; a treatment liquid supply nozzle for supplying a treatment liquid containing a polymer and a volatile solvent onto the substrate; a first removal liquid supply nozzle for supplying a first removal liquid onto the substrate; and a second removal liquid supply nozzle for supplying a second removal liquid onto the substrate.

A wafer cleaning method includes steps as follows. A wafer including a surface to be washed is provided. A first nozzle and a second nozzle disposed above the surface to be washed are provided. The wafer is rotated. A first fluid and a second fluid are provided to spray onto the surface to be washed respectively through the first nozzle and the second nozzle. The first nozzle and the second nozzle are controlled to move a predetermined distance from a central region of the surface to be washed along a first direction away from the central region. The first nozzle and the second nozzle are controlled to move along a second direction opposite to the first direction to a peripheral region of the surface to be washed.

A bonding tool includes a gas supply line that may extend directly between valves associated with one or more gas supply tanks and a processing chamber such that gas supply line is uninterrupted without any intervening valves or other types of structures that might otherwise cause a pressure buildup in the gas supply line between the processing chamber and the valves associated with the one or more gas supply tanks. The pressure in the gas supply line may be maintained at or near the pressure in the processing chamber so that gas provided to the processing chamber through the gas supply line does not cause a pressure imbalance in the processing chamber, which might otherwise cause early or premature contact between semiconductor substrates that are to be bonded in the processing chamber.

A film thickness measuring device includes: a stage on which a substrate is disposed; a light emitter/receiver configured to emit light for measuring a film thickness to the substrate disposed on the stage and receive a reflected light from the substrate disposed on the stage; a rotation mechanism configured to rotate the stage; an orientation detector configured to detect an orientation of the stage; and a controller. Based on a detection result by the orientation detector, the controller controls the rotation mechanism so that the orientation of the stage becomes a desired orientation when the substrate is disposed.

Provided is a method for cleaning a wafer that enables sufficient removal of cutting chips from the wafer surface. The method for cleaning a wafer includes: mounting a wafer 56 on a spinner table 4 such that a rear surface of the wafer 56 faces the spinner table 4 and a front surface 56a of the wafer 56 is exposed, the spinner table 4 being rotatable while holding the wafer 56; subjecting the front surface 56a of the wafer 56 to first cleaning with cleaning water supplied to the front surface 56a of the wafer 56, while rotating the spinner table 4; and subjecting the front surface 56a of the wafer 56 to second cleaning with ammonia water supplied to the front surface 56a of the wafer 56 using a brush. [Elected View] FIG. 6