The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

A substrate processing apparatus may include a spin chuck, a process fluid supplied, and a negative pressure generator. The spin chuck may include a flat portion having a flat upper surface and a recess portion surrounded by the flat portion in a plan view, the recess portion having a recess upper surface, the spin chuck including a first inlet in the recess upper surface of the recess portion, the recess upper surface of the recess portion at a lower level than the flat upper surface of the flat portion. The process fluid supplier is configured to supply a process fluid onto a substrate loaded on the spin chuck. The negative pressure generator is configured to provide a first negative pressure through the first inlet in the recess upper surface of the recess portion.

The present invention relates to a substrate raising/lowering module, a substrate processing module including the same, and a substrate processing system. A lifting module includes: a substrate support disposed in an interior space and supporting a substrate; and an upward/downward driving unit coupled to the substrate support to drive upward/downward movement of the substrate support, wherein the upward/downward driving unit includes a shaft coupled to the substrate support and extending outwardly through a chamber, and an anti-rotation member coupled to the shaft to prevent circumferential rotation of the shaft about a longitudinal reference axis of the shaft.

A method of processing a substrate includes disposing a substrate in a substrate processing apparatus and polishing the substrate. The substrate processing apparatus includes a polishing head and a polishing part. The polishing head includes a polishing head body. The polishing head body includes a pressure member including a first zone and a second zone. The substrate includes a first substrate zone located under the first zone and a second substrate zone located under the second zone. The polishing of the substrate includes rotating the substrate while applying a (1,1)-th pressure to the first substrate zone and applying a (2,1)-th pressure to the second substrate zone, calculating a (1,1)-th polishing rate of the first substrate zone and a (2,1)-th polishing rate of the second substrate zone, determining a reference polishing rate, and resetting a pressure applied to the first substrate zone to a (1,2)-th pressure.

A substrate processing system includes a protective film forming liquid supplying unit which supplies a protective film forming liquid to one surface of a substrate, a protective film forming unit which solidifies or hardens the protective film forming liquid and forms a protective film on the one surface of the substrate, a suction unit which suctions the one surface of the substrate, a processing unit which executes predetermined processing with respect to the other surface of the substrate in a state that the one surface of the substrate is suctioned by the suction unit, and a removing liquid supplying unit which has a removing liquid discharge port that discharges a removing liquid being capable of removing the protective film and supplies the removing liquid toward the one surface of the substrate from the removing liquid discharge port.

A process chamber for fabricating a semiconductor is disclosed. In one aspect, the process chamber includes a chamber body defining a chamber volume. The process chamber also includes a pedestal having a heater arranged to heat a substrate disposed on the pedestal. The pedestal is movable within the chamber volume between a first position and a second position. When the pedestal is in the first position, the pedestal at least partially defines a process cavity in which the substrate is processed. The process chamber further includes a magnet coupled with the chamber body below the process cavity. With the pedestal in the second position and the heater heating the substrate, the magnet is arranged to expose the substrate to a magnetic field in-situ within the chamber volume.

Disclosed are a support unit and a substrate processing apparatus including the same, which prevent a backflow, a wake, or an upward airflow from occurring around a spin chuck. The support unit and the substrate processing apparatus including the same include: a spin chuck; a guide ring provided to surround the spin chuck; a guide ring is installed under the guide ring, and includes cylindrical support with open top and bottom, and a supporting body installed under the guide ring and having a cylindrical shape with open top and bottom portions, in which the supporting body is provided to surround the side of the spin chuck, and a plurality of discharge ports is formed in the supporting body.

A substrate processing apparatus includes: a tray provided in a vacuum processing container and having a recess that accommodates a target made of a low-melting-point material; a refrigerator that cools the tray; a substrate holder that holds a substrate; a reversal driver that reverses the position of the substrate holder upside down; and a rotation driver that rotates the substrate holder in a circumferential direction of the substrate.

A wafer cleaning method includes steps as follows. A wafer including a surface to be washed is provided. A first nozzle and a second nozzle disposed above the surface to be washed are provided. The wafer is rotated. A first fluid and a second fluid are provided to spray onto the surface to be washed respectively through the first nozzle and the second nozzle. The first nozzle and the second nozzle are controlled to move a predetermined distance from a central region of the surface to be washed along a first direction away from the central region. The first nozzle and the second nozzle are controlled to move along a second direction opposite to the first direction to a peripheral region of the surface to be washed.

A substrate processing apparatus A1 includes: cup 1 for storing processing solution 92 to process substrate 91; stage 2 to be raised and lowered along lifting shaft 31 extending in vertical direction z in cup 1; mount 4 provided on stage 2 to mount substrate 91; and pivoting member 5 attached to mount 4 such that pivoting member 5 is pivotable about pivoting shaft 51 provided along circumferential direction centered at lifting shaft 31. Pivoting member 5 includes holding portion 52 located inward of pivoting shaft 51 in radial direction r, and abutting portion 53 located outward of pivoting shaft 51 in radial direction r. As stage 2 is lowered, abutting portion 53 abuts against cup 1 to cause pivoting of pivoting member 5, thereby reducing a distance between holding portion 52 and mount 4 with substrate 91 therebetween. These configurations reduce unintended effects in processing substrate 91.