A wafer drying apparatus is disclosed. The wafer drying apparatus may include a drying chamber housing providing a drying space, in which a wafer is disposed, a supercritical fluid supplying part configured to supply a supercritical fluid into the drying space, a wafer heating part configured to heat the wafer disposed in the drying space, and a wafer cooling part configured to cool the wafer disposed in the drying space. The wafer cooling part may include a cooling plate disposed below a place, on which the wafer is loaded, and a cooling conduit inserted in the cooling plate.

Embodiments of the present disclosure relate to multi-flow gas circuits, processing chambers, and related apparatus and methods applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body, one or more heat sources, and a gas circuit in fluid communication with the chamber body. The gas circuit includes a first flow controller and a first set of valves in fluid communication with the first flow controller. The first set of valves are in fluid communication with a first set of inject passages. The gas circuit includes a second flow controller and a second set of valves in fluid communication with the second flow controller. The second set of valves is in fluid communication with a second set of inject passages. The second set of inject passages and the first set of inject passages alternate with respect to each other along the plurality of flow levels.

Embodiments of the present disclosure generally relate to mass arrangements for lift frames, and related substrate processing chambers, chamber kits, and methods. In one or more embodiments, a processing chamber includes a chamber body including a plurality of gas inject passages formed in the chamber body. The chamber body at least partially defines an internal volume. The processing chamber includes a substrate support assembly positioned in the internal volume. The substrate support assembly includes a lift frame. The lift frame includes a plurality of arms and a ring supported by the plurality of arms. The lift frame includes a plurality of sections azimuthally spaced from each other. The plurality of sections have a different transmissivity than the ring.

A process chamber can include a curved upper wall extending longitudinally from a first end portion of the reaction chamber to a second end portion of the reaction chamber. The process chamber can include a curved lower wall cooperating with the curved upper wall to at least partially define an internal cavity, the curved lower wall connected to the curved upper wall from the first end portion to the second end portion at a first side of the process chamber and at a second side of the process chamber. A rail can extend along an exterior surface of the process chamber from the first end portion to the second end portion, the rail disposed at or near a connection between the curved upper wall and the curved lower wall.

A system includes a robot configured to transfer either one of a substrate and an edge ring within a substrate processing system, a substrate aligner configured to adjust a rotational position of either one of the substrate or the edge ring relative to an end effector of the robot, and a carrier plate configured to support the edge ring. The robot is configured to retrieve the carrier plate with the end effector, retrieve the edge ring using the carrier plate supported on the end effector, and transfer the carrier plate and the edge ring to the substrate aligner.

Apparatus and techniques are described herein for use in manufacturing electronic devices, such as can include organic light emitting diode (OLED) devices. Such apparatus and techniques can include using one or more modules having a controlled environment. For example, a substrate can be received from a printing system located in a first processing environment, and the substrate can be provided a second processing environment, such as to an enclosed thermal treatment module comprising a controlled second processing environment. The second processing environment can include a purified gas environment having a different composition than the first processing environment.

In an substrate processing apparatus according to the present invention, a chamber has a conveyance opening for conveying the substrate along a conveyance path between the outside of the chamber and the substrate holder and a maintenance opening provided on an opposite side of the conveyance opening with the substrate holder. A rotating mechanism has a motor for generating a rotational driving force to rotate the substrate holder and a power transmitter for transmitting the rotational driving force generated by the motor to the substrate holder. The motor and the power transmitter are so arranged on the opposite side of the conveyance opening with respect to the substrate holder, as to face the maintenance opening, to thereby make the rotating mechanism accessible through the maintenance opening from the outside.

A top lid capable of minimizing thermal deformation when a substrate processing temperature increases includes a support for supporting the top lid, the support protruding integrally from one surface of the top lid.

A substrate treating apparatus includes a treatment housing, a holder, and a liquid supplying unit. The holder is accommodated in the treatment housing. The holder holds a substrate. The liquid supplying unit is accommodated in the treatment housing. The liquid supplying unit supplies a treating liquid to the substrate held by the holder. The substrate treating apparatus further includes two exhaust pipes. The exhaust pipes are each located on a lateral side of the treatment housing. The exhaust pipes each exhaust gas. The substrate treating apparatus includes a switching mechanism. The switching mechanism is located at a level equal to that of the treatment housing. The switching mechanism switches an exhaust path of the treatment housing to one of the two exhaust pipes.

A substrate handling chamber body is formed from a castable aluminum alloy including a manganese (Mn) constituent and an iron (Fe) constituent. The castable aluminum alloy has a manganese (Mn) constituent-to-iron (Fe) constituent ratio that between about 1.125 and about 1.525 to limit microporosity and shrinkage porosity within the castable aluminum alloy forming the substrate handling chamber body. Semiconductor processing systems and methods of making substrate handling chamber bodies for semiconductor processing systems are also described.