Exemplary substrate processing systems may include a plurality of processing regions. The systems may include a transfer region housing defining a transfer region fluidly coupled with the plurality of processing regions. The systems may include a plurality of substrate supports, and each substrate support of the plurality of substrate supports may be vertically translatable between the transfer region and an associated processing region of the plurality of processing regions. The systems may include a transfer apparatus including a rotatable shaft extending through the transfer region housing. The transfer apparatus may include an end effector coupled with the rotatable shaft. The end effector may include a central hub defining a central aperture fluidly coupled with a purge source. The end effector may also include a plurality of arms having a number of arms equal to a number of substrate supports of the plurality of substrate supports.

A substrate processing apparatus includes a first chamber, a substrate loader under a first pressure and including a load port configured to load a substrate, a processing chamber inside the first chamber and including a processing bath in which a processing liquid for processing the substrate is provided and a bath cover configured to cover the processing bath, a processing liquid supplier configured to supply the processing liquid to the processing chamber, a first gas supply device configured to cause an internal pressure of the first chamber to be at a second pressure higher than the first pressure by supplying gas into the first chamber, and a second gas supply device configured to cause an internal pressure of the processing chamber to be at a third pressure higher than the first pressure by supplying gas into the processing chamber.

A batch processing chamber and a process kit for use therein are provided. The process kit includes an outer liner having an upper outer liner and a lower outer liner, an inner liner, and a top plate and a bottom plate attached to an inner surface of the inner liner. The top plate and the bottom plate form an enclosure together with the inner liner, and a cassette is disposed within the enclosure. The cassette including shelves configured to retain a plurality of substrates thereon. The inner liner has inlet openings disposed on an injection side of the inner liner and configured to be in fluid communication with a gas injection assembly of a processing chamber, and outlet openings disposed on an exhaust side of the inner liner and configured to be in fluid communication with a gas exhaust assembly of the processing chamber. The inner surfaces of the enclosure comprise material configured to cause black-body radiation within the enclosure.

A system includes a plurality of spindle arms located above a plurality of stations in a processing chamber to transport a semiconductor substrate between the stations. The spindle arms reside in the processing chamber during processing of the semiconductor substrate. The system comprises first gas lines arranged below the stations to supply a purge gas. The system comprises second gas lines extending upwards from the first gas lines to supply the purge gas to the spindle arms during the processing of the semiconductor substrate in the processing chamber.

Methods, systems, and media for deposition control in a process chamber are provided. In some embodiments, a method comprises (a) obtaining, at a present time, information indicating a status of one or more components of the process chamber during performance of a deposition process on one or more wafers. The method may comprise (b) determining whether adjustments to one or more control components of the process chamber are to be made by providing an input based on the obtained information to a trained machine learning model configured to determine adjustments as an output, wherein the adjustments to the one or more control components cause a change in the deposition process. The method may comprise (c) transmitting instructions to a controller of the process chamber that cause the adjustments to the one or more control components to be implemented.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space; a separation unit provided at the inner space and configured to be combined with the chamber to divide the inner space into a plurality of treating spaces and a transfer space; a plurality of support units provided at each of the plurality of treating spaces and configured to support a substrate; a plurality of gas supply units provided at each of the plurality of treating spaces and configured to supply a process gas to the substrate supported on the plurality of support units; and a transfer unit provided at the transfer space and configured to transfer the substrate between the plurality of treating spaces.

A substrate transport method is employed in a substrate processing system including a plurality of processing chambers, a load lock chamber, a vacuum transport device provided in a vacuum transport chamber connecting the load lock chamber and the plurality of processing chambers and configured to simultaneously transport a plurality of substrates, and an atmospheric transport device provided in an atmospheric transport chamber and configured to transport a substrate from a carrier to the load lock chamber. The substrate transport method includes acquiring in advance a relative positional error for a case where the plurality of substrates are transported from the load lock chamber to the plurality of processing chambers and placed on a stage in the plurality of processing chambers, and placing the plurality of substrates on a stage in the load lock chamber, based on a transport path of the plurality of substrates and the relative positional error.

A display device includes a thin-film transistor, a source/drain electrode and an auxiliary electrode including a first conductive layer and a second conductive layer disposed on the first conductive layer, a via insulating layer having a first opening exposing the auxiliary electrode, a capping layer covering a portion of the auxiliary electrode and a light emitting material layer and a common electrode layer sequentially stacked on the via insulating layer and the capping layer, wherein the source/drain electrode is electrically connected to the thin-film transistor through a contact hole penetrating the interlayer insulating layer, the auxiliary electrode has an undercut, and the capping layer includes a first capping layer covering side surfaces of the first conductive layer of the auxiliary electrode and a second capping layer separated from the first capping layer and disposed on the second conductive layer of the auxiliary electrode.

Embodiments herein include high throughput density chemical mechanical polishing (CMP) modules and customizable modular CMP systems formed thereof. In one embodiment, a polishing module features a carrier support module, a carrier loading station, and a polishing station. The carrier support module features a carrier platform and one or more carrier assemblies. The one or more carrier assemblies each comprise a corresponding carrier head suspended from the carrier platform. The carrier loading station is used to transfer substrates to and from the carrier heads. The polishing station comprises a polishing platen. The carrier support module, the substrate loading station, and the polishing station comprise a one-to-one-to-one relationship within each of the polishing modules. The carrier support module is positioned to move the one or more carrier assemblies between a substrate polishing position disposed above the polishing platen and a substrate transfer position disposed above the substrate loading station.

A substrate processing apparatus includes a first drying unit configured to perform a first drying process using a drying fluid on a substrate having a liquid film formed thereon, a first fluid supply unit configured to supply the drying fluid into the first drying unit, a second drying unit configured to perform a second drying process using the drying fluid on the substrate on which the first drying process is performed, a second fluid supply unit configured to supply the drying fluid into the second drying unit, a first door configured to control opening and closing of the first drying unit, and a second door configured to control opening and closing of the second drying unit, wherein the first door is opened when pressure in the first drying unit reaches a first transfer pressure, and the second door is opened when pressure in the second drying unit reaches a second transfer pressure.