Capacitive couplings in a direct-bonded interface for microelectronic devices are provided. In an implementation, a microelectronic device includes a first die and a second die direct-bonded together at a bonding interface, a conductive interconnect between the first die and the second die formed at the bonding interface by a metal-to-metal direct bond, and a capacitive interconnect between the first die and the second die formed at the bonding interface. A direct bonding process creates a direct bond between dielectric surfaces of two dies, a direct bond between respective conductive interconnects of the two dies, and a capacitive coupling between the two dies at the bonding interface. In an implementation, a capacitive coupling of each signal line at the bonding interface comprises a dielectric material forming a capacitor at the bonding interface for each signal line. The capacitive couplings result from the same direct bonding process that creates the conductive interconnects direct-bonded together at the same bonding interface.

A bonding apparatus and a bonding method are provided. The bonding apparatus includes: a machine base, including a movable pick-up platform; and a laser interferometer assembly. The laser interferometer assembly includes: a first laser interferometer unit, configured to determine displacement information of the movable pick-up platform along a first direction; and a second laser interferometer unit, configured to determine displacement information of the movable pick-up platform along a second direction. Based on the displacement information along the first direction and the displacement information along the second direction, the laser interferometer assembly is further configured to determine coordinate information of the movable pick-up platform.

The present disclosure provides a method of fabricating radio frequency (RF) circuits using three-dimensional (3D), hybrid wafer-level bonded wafers. In one aspect, a first, bottom silicon-on-insulator (SOI) wafer and a second, top SOI wafer are provided. Complementary metal-oxide semiconductor processing is then performed on both the first and second SOI wafers to fabricate transistors and form RF circuits on each wafer. The second wafer is then bonded to the first wafer to electrically couple the RF circuits together. In an aspect, the 3D fabrication method enables RF circuits that are designed using transistor structures stacked in a three-dimensional (3D) folded configuration using a plurality of wafers. In one aspect, the RF circuit uses mirrored portions that are folded together during the wafer bonding process. In another aspect, the RF circuit uses asymmetric portions between the top versus bottom wafers.

Systems, devices, and manufacturing methods of a semiconductor device are provided. In one aspect, a semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a memory array. The memory array includes a first memory subarray and a second memory subarray stacked along a first direction. A first row of memory cells of the first memory subarray and a first row of memory cells of the second memory subarray are coupled to a same bit line. The same bit line is between the first memory subarray and the second memory subarray along the first direction. The second semiconductor structure includes a control circuitry coupled to the memory array. The semiconductor device includes a second via structure that is coupled to the pad-out structure of the second semiconductor structure through the first via structure and the interconnection structure.

An interconnect structure includes a plurality of first pads, a plurality of second pads, and a plurality of conductive lines. The first pads are arranged to form a first column-and-row array, and the second pads are arranged to form a second column-and-row array. The first column-and-row array, the second column-and-row array and the conductive lines are disposed in a same layer. The first pads in adjacent rows in the first column-and-row array are separated from each other by a first vertical distance from a plan view, the second pads in adjacent rows in the second column-and-row array are separated from each other by a second vertical distance from the plan view. A sum of widths of the conductive lines electrically connecting the first pads and the second pads in the same row is less than the first vertical distance and the second vertical distance from the plan view.

A semiconductor structure includes an alternating stack of insulating layers and composite layers, each of the composite layers includes a plurality of electrically conductive word line strips and a plurality of dielectric isolation structures, and each of the insulating layers has an areal overlap with each electrically conductive word line strip and each dielectric isolation structure within the composite layers within a memory array region in a plan view along a vertical direction, rows of memory openings arranged along the first horizontal direction, where each row of memory openings of the rows of memory openings vertically extends through each insulating layer within the alternating stack and one electrically conductive strip for each of the composite layers, and rows of memory opening fill structures located within the rows of memory openings, where each of the memory opening fill structures includes a vertical stack of memory elements and a vertical semiconductor channel.

A semiconductor storage device of an embodiment includes a substrate, a plurality of first conductive layers, pillar, and a second conductive layer. The plurality of first conductive layers are provided above the substrate, and mutually separated in a first direction. The pillar is provided to penetrate the plurality of the first conductive layers, and includes a first semiconductor layer extending in the first direction. A part of the pillar that intersects with the first conductive layers are functioned as memory cells. The second conductive layer is provided above the plurality of first conductive layers and is in contact with the first semiconductor layer. The second conductive layer is made of a metal or a silicide.

A semiconductor package is provided. The semiconductor package includes: an interposer; a System on Integrated Chips (SoIC) die stack bonded to a top surface of the interposer, the SoIC die stack comprising two or more dies bonded together; and a plurality of chips bonded to the top surface of the interposer. A first lateral distance, in a first direction, between a first boundary of the SoIC die stack and a boundary of a neighboring chip among the plurality of chips is larger than a first threshold distance.

A semiconductor device assembly including a first semiconductor die having a first dielectric region and a first bond pad that are disposed on a first side of the first semiconductor die; a second semiconductor die having a second dielectric region and a second bond pad that are disposed on a second side of the second semiconductor die; and a hybrid bonding interface between the first side of the first semiconductor die and the second side of the second semiconductor die, the hybrid bonding interface including a gap free metal-metal bonding region between the first and the second bond pads and a gap free dielectric-dielectric bonding region between the first and the second dielectric regions, wherein the dielectric-dielectric bonding region includes a nitrogen gradient with a concentration that increases with proximity to the metal-metal bonding region.

A stacked gate-all-around (GAA) complementary field-effect transistor (CFET) includes a first GAA FET of a first type and a second GAA FET of a second type. Each of the first GAA FET and the second GAA FET includes at least one three-dimensional (3D) semiconductor slab with a channel region and a first surface. A first gate structure surrounds the channel region in the first GAA FET, and a second gate structure surrounds the channel region in the second GAA FET. The first gate structure is stacked opposite the second gate structure in a direction orthogonal to the first surface. In some examples, a first crystal structure of the 3D semiconductor slab in the first GAA FET has a first orientation, and a second crystal structure of the 3D semiconductor slab in the second GAA FET has a different orientation for improved carrier mobility.