Some embodiments of the present disclosure discloses a method for transferring electronic devices. The method includes providing an electronic device array structure, a providing carrier, and a plurality of second electronic devices arranged on the providing carrier. Wherein the electronic device array structure includes a carrier and a flawed group arranged on the carrier. The flawed group includes a plurality of first electronic devices and a vacancy. A patterned light is formed to irradiate the providing carrier by using the electronic device array structure.

A method for producing a laminated film for temporary fixation of a semiconductor member to a support member includes providing a first curable resin layer on one surface of a metal foil and providing a second curable resin layer on the other surface of the metal foil to obtain the laminated film. A laminated film used for temporarily fixing a semiconductor member to a support member includes a first curable resin layer, a metal foil, and a second curable resin layer laminated in sequence.

According to one embodiment, a manufacturing method of a semiconductor device, comprising: attaching a dicing tape to a ring frame, the dicing tape including a base, an adhesive provided on an upper surface of the base and including a material capable of changing in property by light irradiation, and a releasing film; executing light irradiation from below the base, thereby making an adhesivity of a first portion overlapping the releasing film, in an upper surface of the adhesive, different from an adhesivity of a second portion not overlapping the first portion, in the upper surface of the adhesive; attaching a work piece to the adhesive; and singulating a plurality of semiconductor devices by dicing the work piece.

A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100 C./hour and to a heat treatment at 600 C. for 80 minutes, and then to a cooling to the room temperature at 100 C./hour.

A film for temporary fixing used for temporarily fixing a semiconductor member and a support member contains a curable resin component. The storage modulus at 270 C. after curing of the film for temporary fixing is 1.5 to 20 MPa. The storage modulus at 25 C. after curing of the film for temporary fixing is 1.5 to 150 MPa.

A method for producing a semiconductor treatment liquid used for treating a resin having an ether bond, the method comprising: heating a phosphoric acid-containing solution to 100 C. or higher and 400 C. or lower to produce a heated solution; cooling the heated solution to 5 C. or higher and 95 C. or lower to produce a cooled solution; and mixing the cooled solution with at least one selected from the group consisting of an aqueous hydrogen peroxide solution and an aqueous nitric acid solution.

A die bonding apparatus includes a push-up unit, a head having a collet that sucks a die, and a control device. The control device is configured to suck a dicing tape using a dome plate; land the collet onto the die using the head; suck the die using the collet; lift plural blocks from the dome plate; stop the outermost block disposed on the outermost side among the plural blocks from lifting at a height where the die is peeled off from the dicing tape; and lift blocks other than the outermost block among the plural blocks higher than the outermost block to a predefined height.

A device wafer processing method includes a protective film coating step of coating a face side of a device wafer with a protective film, a laser processing step of applying a laser beam having a wavelength absorbable by the device wafer to the device wafer along streets and forming laser processing grooves that divide a device layer, a tape affixing step of affixing a tape to the protective film on the device wafer, a holding step of holding the face side of the device wafer by a holding table via the tape and exposing a reverse side of the device wafer, and a cutting step of cutting the device wafer held on the holding table, by a cutting blade from the reverse side along the streets, and dividing the device wafer into individual devices.

A lift-off method includes joining a transfer substrate to a face side of an optical device layer of an optical device wafer with a joining member interposed therebetween, thereby making up a composite substrate, applying a pulsed laser beam having a wavelength transmittable through the epitaxy substrate and absorbable by a buffer layer, from a reverse side of the epitaxy substrate of the optical device wafer, thereby breaking the buffer layer, and an optical device layer transferring step of peeling off the epitaxy substrate from the optical device layer and transferring the optical device layer to the transfer substrate. The optical device layer transferring step includes the step of applying a bending moment to an area of the composite substrate that includes an outer peripheral portion thereof while holding an area of the composite substrate that includes a central portion thereof.

A wafer transfer method for forming a second work unit by transferring a wafer of a first work unit including a first ring frame, a first adhesive tape, and the wafer to a second adhesive tape includes sandwiching a claw body between the first ring frame and a second ring frame, affixing the second adhesive tape to a surface of the wafer which surface is not affixed to the first adhesive tape, holding the wafer by the second ring frame via the second adhesive tape, and peeling off the first adhesive tape from the wafer.