Described herein is a non-aqueous composition including (a) an organic solvent; and (b) at least one additive of formulae I or II ##STR00001##
where R.sup.1 is H R.sup.2 is selected from the group consisting of H, C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.10 alkoxy, C.sub.6 to C.sub.10 aryl, and C.sub.6 to C.sub.10 aroxy, R.sup.3 is selected from the group consisting of R.sup.2, R.sup.4 is selected from the group consisting of C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.10 alkoxy, C.sub.6 to C.sub.10 aryl, and C.sub.6 to C.sub.10 aroxy, R.sup.10, R.sup.12 are independently selected from the group consisting of C.sub.1 to C.sub.10 alkyl and C.sub.1 to C.sub.10 alkoxy, m is 1, 2 or 3, and n is 0 or an integer from 1 to 100.

A method includes: forming a barrier layer in a substrate; depositing a first dielectric layer over the substrate; forming a patterned mask layer over the first dielectric layer; patterning the first dielectric layer into a first sublayer of a gate dielectric layer; converting at least part of the patterned mask layer into a second sublayer of the gate dielectric layer; depositing a second dielectric layer adjacent to the first and second sublayers to serve as a third sublayer of the gate dielectric layer; and depositing a gate electrode over the gate dielectric layer.

A substrate, a first layer disposed on the substrate, and a second layer disposed on the first layer are provided. An opening is etched through the second layer to the first layer. A first portion of the first layer is etched through the opening using a first etchant, to expose a surface of the substrate through the opening. A feature is deposited on the surface of the substrate through the opening. A second portion of the first layer is etched using a gaseous etchant, to release the substrate from the second layer.

A substrate processing method according to the present invention incudes: a preparation step of preparing a substrate in which at least a first surface containing silicon oxide and a second surface containing silicon or a silicon compound other than silicon oxide are exposed; a surface modification step of forming an etching selectivity imparting film on at least a part of the first surface and at least a part of the second surface by a silylation treatment of bringing a silylating agent into contact with the first surface and the second surface; and an etching step of selectively carrying out an etching treatment on the second surface with respect to the first surface using an etching agent after the surface modification step.

A cleaning solution includes a solvent having Hansen solubility parameters: 25>.sub.d>13, 25>.sub.p>3, 30>.sub.h>4; an acid having an acid dissociation constant pKa: 11<pKa<4, or a base having pKa of 40>pKa>9.5; and a surfactant. The surfactant is an ionic or non-ionic surfactant, selected from ##STR00001##
R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, where A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, X includes polar functional groups selected from OH, O, S, P, P(O.sub.2), C(O)SH, C(O)OH, C(O)OR, O, N, C(O) NH, SO.sub.2OH, SO.sub.2SH, SOH, SO.sub.2, CO, CN, SO, CON, NH, SO.sub.3NH, and SO.sub.2NH.

A method for manufacturing a multilayer structure by direct bonding between a first substrate and a second substrate, the method including the steps of: providing a first substrate and a second substrate respectively including a first bonding surface and a second bonding surface, contacting the first bonding surface and the second bonding surface so as to create a direct bonding interface between the first substrate and the second substrate, placing at least the direct bonding interface in a cationic aqueous solution including deionized water and cationic species originating from at least one element of the first and/or of the second column of the periodic table of elements, and applying a heat treatment at a temperature comprised between 20 C. and 350 C. so as to obtain the multilayer structure.

A substrate processing method includes providing a substrate formed with a stacked film including at least an etching target film, an underlying layer disposed below the etching target film, and a mask disposed above the etching target film; etching the etching target film through the mask using plasma; and performing heat treatment on the substrate at a predetermined temperature after the etching. At least one of the mask and the underlying layer contains a transition metal.

A method for supplying processing liquid is configured to adjust the supply amount of silica by a processing liquid supply unit in order to improve a selectivity ratio in a substrate treatment process through the processing liquid, to mix processing liquid substances, to adjust the concentration and temperature of the processing liquid on the basis of a substrate processing condition to supply the processing liquid to a substrate processing apparatus, to recover the processing liquid through a processing liquid recycling unit spatially separated from a processing liquid supply unit and to adjust the concentration of moisture and temperature of the processing liquid, and to supply the recycled processing liquid.

A method of manufacturing a semiconductor device includes performing chemical mechanical polishing on a surface using a polishing slurry including abrasives, and first cleaning by supplying a cleaning slurry including soft particles and a dispersion medium to remove the abrasives from a polished surface on which the chemical mechanical polishing is performed he soft particles having a lower hardness than the polished surface, wherein a zeta potential of one of the soft particles and the abrasives at a pH of the cleaning slurry is greater than 0, and a zeta potential of the other of the soft particles and the abrasives at the pH of the cleaning slurry is less than 0.

The present disclosure describes methods and systems for plasma-assisted etching of a metal oxide. The method includes modifying a surface of the metal oxide with a first gas, removing a top portion of the metal oxide by a ligand exchange reaction, and cleaning the surface of the metal oxide with a second gas.