In examples, a package comprises a semiconductor die having a device side and a bond pad on the device side, a conductive terminal exposed to an exterior of the package, and an electrical fuse. The electrical fuse comprises a conductive ball coupled to the bond pad, and a bond wire coupled to the conductive terminal. The bond wire is stitch-bonded to the conductive ball.

A method for forming a package structure is provided. The method includes transporting a first package component into a processing chamber. The method includes positioning the first package component on a chuck table. The method includes using the chuck table to heat the first package component. The method includes holding a second package component with a bonding head. The bonding head communicates with a plurality of vacuum devices via a plurality of vacuum tubes, and the vacuum devices each operate independently. The method also includes bonding the first package component and the second package component in the processing chamber to form the package structure.

The disclosure is directed to wide band-gap semiconductor devices, such as power devices based on silicon carbide or gallium nitride materials. A power device die is attached to a carrier substrate or a base using sintered silver as a die attachment material or layer. The carrier substrate is, in some embodiments, copper plated with silver. The sintered silver die attachment layer is formed by sintering silver nanoparticle paste under a very low temperature, for example, lower than 200 C. and in some embodiments at about 150 C., and with no external pressures applied in the sintering process. The silver nanoparticle is synthesized through a chemical reduction process in an organic solvent. After the reduction process has completed, the organic solvent is removed through evaporation with a flux of inert gas being injected into the solution.

A method of making an inverter comprising: a substrate; a first transistor in thermal contact with the substrate, wherein the transistor comprises a gate; the substrate sintered to a heat sink through a sintered layer; an encapsulant that at least partially encapsulates the first transistor; and a Kelvin connection to the transistor gate.

A wedge tool according to one aspect of the present disclosure is a wedge tool used for wedge bonding of pressing a metal wire and applying ultrasonic vibration, thereby bonding the metal wire to a bonded body, including: a wire holding groove extending along a longitudinal direction of the metal wire in a tip end portion of the wedge tool and holding the metal wire; and at least two convex parts formed in a groove bottom part of the wire holding groove and having a side surface located away from a sidewall of the wire holding groove and arranged in the longitudinal direction of the metal wire.

A method and an apparatus for forming an electronic device is provided. The method comprises: providing a substrate; disposing at least one electronic component on the substrate via a solder paste; applying an inert atmosphere to the substrate and the solder paste, wherein the inert atmosphere has a reduced oxygen partial pressure compared with air atmosphere; and reflowing the solder paste by a heating process within the inert atmosphere to reduce voids formed within the solder paste during the reflowing of the solder paste.

A semiconductor device has a substrate. The substrate is disposed on a quartz carrier. An electrical component is disposed over the substrate opposite the quartz carrier. An epoxy-solder paste bump is disposed between the substrate and electrical component. The epoxy-solder paste bump comprises an epoxy and a solder powder disposed in the epoxy. Laser energy is applied to a surface of the substrate through the quartz carrier. The laser energy is converted to thermal energy to reflow the solder powder and cure the epoxy.

A die bonding tool includes a bond head that secures a semiconductor die against a planar surface of the bond head, an actuator system that moves the bond head and the semiconductor die towards a surface of a target substrate, and at least one contact sensor configured to detect an initial contact between a first region of the semiconductor die and the surface of the target substrate, where in response to detecting the initial contact between the semiconductor die and the target substrate, the actuator tilts the planar surface of the bond head and the semiconductor die to bring a second region of the semiconductor die into contact with the surface of the target substrate and thereby provide improved contact between the semiconductor die and the target substrate and more effective bonding including instances where the planar surface of the bond head and the target substrate surface are not parallel.

A semiconductor processing apparatus includes a process chamber that defines an enclosure. The enclosure includes a substrate support configured to support a substrate and rotate the substrate about a central axis of the process chamber. The substrate support is also configured to move vertically along the central axis and position the substrate at multiple locations in the enclosure. The apparatus also includes one or more UV lamps configured to irradiate a top surface of the substrate supported on the substrate support.

A wedge bonding tool is provided. The wedge bonding tool includes a body portion including a tip portion, the tip portion terminating at a working end of the wedge bonding tool. The tip portion includes (i) two opposing walls, and (ii) an adjoining surface between the two opposing walls. The adjoining surface includes a flat area. The two opposing walls and the flat area define a groove configured to receive a wire. The flat area has a width of at least 20% of a width of the groove at the working end.