A method of manufacturing an electronic device includes: providing a vapor generating chamber that accommodates a heat transfer fluid; providing a substrate stage within the vapor generating chamber, the substrate stage including a seating surface and suction passages penetrating the substrate stage to be open to the seating surface; loading a substrate on the substrate stage, wherein electronic components are disposed on the substrate via bumps; generating at least a partial vacuum in the suction holes to suction-support the substrate on the seating surface; heating the heat transfer fluid to generate saturated vapor within the vapor generating chamber; and soldering the bumps using the saturated vapor.

A disclosed system is configured to bond a chip to a substrate and includes a chip processing subsystem that is configured to receive the chip and to expose the chip to a first plasma, and a substrate processing subsystem that is configured to receive the substrate and to expose the substrate to a second plasma. The system further includes a bonding subsystem that is configured to align the chip with the substrate, to force the chip and the substrate into direct mechanical contact with one another by application of a compressive force, and to apply heat to at least one of the chip or the substrate. Application of the compressive force and the heat thereby bonds the chip to the substrate. The first and second plasmas may include H.sub.2/N.sub.2, H.sub.2/Ar, H.sub.2/He, NH.sub.3/N.sub.2, NH.sub.3/Ar, or NH.sub.3/He and the chip and substrate may be maintained in a low oxygen environment.

A semiconductor device has a leadframe and a first electrical component disposed over the leadframe. A clip bond is disposed over the first electrical component. The clip bond has a plurality of recesses each having a different depth. A first recess is proximate to a first distal end of the first electrical component, and a second recess is proximate to a second distal end of the first electrical component opposite the first distal end of the first electrical component. A depth of the first recess is different from a depth of the second recess. A third recess is over a surface of the first electrical component. A depth of the third recess is different from the depth of the first recess and the depth of the second recess. A second electrical component is disposed over the leadframe. The clip bond extends over the second electrical component.

A semiconductor apparatus includes a substrate, a semiconductor device arranged on an upper surface of the substrate, a lead frame bonded to an upper surface of the semiconductor device via a bonding material, the lead frame having a first recess on an upper surface thereof, a wire connected to the first recess, and a resin that seals the substrate, the semiconductor device, the lead frame, and the wire.

A method of making an assembly can include juxtaposing a top surface of a first electrically conductive element at a first surface of a first substrate with a top surface of a second electrically conductive element at a major surface of a second substrate. One of: the top surface of the first conductive element can be recessed below the first surface, or the top surface of the second conductive element can be recessed below the major surface. Electrically conductive nanoparticles can be disposed between the top surfaces of the first and second conductive elements. The conductive nanoparticles can have long dimensions smaller than 100 nanometers. The method can also include elevating a temperature at least at interfaces of the juxtaposed first and second conductive elements to a joining temperature at which the conductive nanoparticles can cause metallurgical joints to form between the juxtaposed first and second conductive elements.

A method and an apparatus for forming an electronic device is provided. The method comprises: providing a substrate; disposing at least one electronic component on the substrate via a solder paste; applying microwave radiation to the substrate to reflow the solder paste; applying a vacuum pressure to the substrate to remove voids formed within the solder paste during the reflowing of the solder paste; solidifying the solder paste into solder bumps between the substrate and the at least one electronic component.

An atmospheric pressure plasma apparatus and method are disclosed that operate with a multigas mixture to provide a high concentration of reactive neutral species for cleaning and activating the surfaces of substrates, including those with metal interconnects embedded in the substrate.

A semiconductor die and an electrically conductive ribbon are arranged on a substrate. The electrically conductive ribbon includes a roughened surface. An insulating encapsulation is molded onto the semiconductor die and the electrically conductive ribbon. The roughened surface of the electrically conductive ribbon provides a roughened coupling interface to the insulating encapsulation.

A method and an apparatus for forming an electronic device is provided. The method comprises: providing a substrate; disposing at least one electronic component on the substrate via a solder paste; applying an inert atmosphere to the substrate and the solder paste, wherein the inert atmosphere has a reduced oxygen partial pressure compared with air atmosphere; and reflowing the solder paste by a heating process within the inert atmosphere to reduce voids formed within the solder paste during the reflowing of the solder paste.

A semiconductor device has a substrate. The substrate is disposed on a quartz carrier. An electrical component is disposed over the substrate opposite the quartz carrier. An epoxy-solder paste bump is disposed between the substrate and electrical component. The epoxy-solder paste bump comprises an epoxy and a solder powder disposed in the epoxy. Laser energy is applied to a surface of the substrate through the quartz carrier. The laser energy is converted to thermal energy to reflow the solder powder and cure the epoxy.