Semiconductor devices, and related systems and methods, are disclosed herein. In some embodiments, the stacked semiconductor device includes a package substrate having an inner surface, a die stack carried by the inner surface, and a stacked capacitor device carried by the inner surface adjacent to the die stack. The die stack can include one or more semiconductor dies, each of which can be electrically coupled to the inner surface by one or more bond wires and/or solder structures. The stacked capacitor device can include a first capacitor having a lower surface attached to the inner surface of the package substrate, a interposer having a first side attached to an upper surface of the first capacitor, and a second capacitor attached to a second side of the interposer opposite the first side.

A semiconductor package includes: a support substrate; a first semiconductor chip on the support substrate, the first semiconductor chip including one or more first chip pads; a second semiconductor chip spaced apart from the first semiconductor chip, the second semiconductor chip including one or more second chip pads; a third semiconductor chip on the first semiconductor chip and the second semiconductor chip, the third semiconductor chip comprising one or more third chip pads; one or more first conductive structures on the one or more first chip pads; one or more second conductive structures on the one or more second chip pads; and a redistribution layer on the one or more first conductive structures, the one or more second conductive structures, and the one or more third chip pads.

A semiconductor package includes a package substrate, a first chip group including at least one first chip spaced apart from the package substrate in a first direction perpendicular to a surface of the package substrate, a second chip group including at least one second chip disposed between the package substrate and the first chip group, a first molding film that surrounds the first chip group, a second molding film that surrounds the second chip group, and an alignment post that penetrates the first molding film and contacts the second molding film. The second molding film covers a surface of an end portion of the alignment post facing the package substrate.

A semiconductor die includes: a main body including a top surface and a bottom surface; a plurality of first bonding pads disposed on the top surface; and a plurality of second bonding pads disposed on the bottom surface. When viewed in a direction perpendicular to the top surface or the bottom surface, the plurality of first bonding pads are disposed at positions that match positions to which the plurality of second bonding pads are shifted in a plane of the bottom surface while maintaining a positional relationship between the plurality of second bonding pads. The main body includes a first inter-die interface circuit and a second inter-die interface circuit. The plurality of first bonding pads are connected to the first inter-die interface circuit, and the plurality of second bonding pads are connected to the second inter-die interface circuit.

A semiconductor device includes: a wiring board having a surface; a chip stack disposed above the surface and including a first semiconductor chip; a second semiconductor chip disposed between the surface and the chip stack; a spacer disposed between the surface and the first semiconductor chip, the spacer surrounding the second semiconductor chip along the surface, and the spacer containing a material higher in thermal conductivity than silicon; and a sealing insulation layer covering the chip stack.

A semiconductor package may include: a package substrate; a base semiconductor chip above the package substrate, the base semiconductor chip including a base pad in contact with the package substrate; at least one stacked semiconductor chip above the base semiconductor chip, the at least one stacked semiconductor chip including a chip pad connected to the package substrate; and an organic layer between the package substrate and the at least one stacked semiconductor chip in a first direction perpendicular to a surface of the package substrate; at least one connection structure in the organic layer, the at least one connection structure connecting the package substrate and the chip pad of the at least one stacked semiconductor chip, wherein the at least one connection structure includes a filling layer and a surface layer surrounding at least a portion of the filling layer.

This application is directed to packaging technology for providing an electronic device (e.g., a memory device). A memory device includes a stack of memory chips, a device substrate, and a conductive wire. The stack of memory chips includes a first memory chip having a chip pad that is formed on a surface of the first memory chip. The device substrate includes a plurality of substrate pads formed on a front surface of the device substrate. The front surface has a front opening, and the device substrate receives the stack of memory chips via the front opening of the front surface. The conductive wire is coupled to the front surface and the stack of memory chips, and is configure to couple the chip pad and one of the substrate pads electrically. In some embodiments, the device substrate includes a cutout opening that goes through an entire thickness of the device substrate.

A semiconductor package includes a semiconductor die stack stacked in a staircase shape; a wiring structure facing one surface of the semiconductor die stack, the wiring structure including a conductive pad facing the semiconductor die stack; and a bonding wire connecting the semiconductor die stack to the conductive pad. The wiring structure includes a wiring structure upper surface facing the one surface of the semiconductor die stack, and a wiring structure lower surface that is opposite the wiring structure upper surface, and the wiring structure upper surface extends along a virtual plane. The conductive pad includes a conductive pad surface facing the one surface of the semiconductor die stack. The conductive pad surface is separated from the virtual plane.

Implementations described herein relate to various semiconductor device assemblies. In some implementations, an apparatus includes a first integrated circuit die conjoined with a second integrated circuit die in a stack of integrated circuit dies, where the first integrated circuit die includes an end region that extends beyond an edge of the second integrated circuit die. The apparatus includes an interconnect structure that is conjoined with the end region and is electrically coupled to integrated circuitry of the first integrated circuit die and a casing that encapsulates at least a portion of the interconnect structure, at least a portion of the first integrated circuit die, and at least a portion of the second integrated circuit die. The apparatus includes an electrical trace that is conjoined with a surface of the casing, is disposed along a contour of the casing, and is electrically coupled to the interconnect structure.

Stacked semiconductor packages with features to mitigate trace exposer and associated systems and methods are disclosed herein. In some embodiments, the stacked semiconductor package includes a base substrate, a stack of dies carried by the base substrate, and a mold material deposited at least partially encapsulating the stack of dies. The base substrate can include an active surface and a back surface opposite the active surface. Further, the active surface can include one or more cuts into a peripheral portion of the active surface (e.g., stepped structures at the peripheral edges of the base substrate). The base substrate can also include a plurality of bond pads carried by the active surface over the peripheral portion. Still further, the mold material can fill each of the one or more cuts in the active surface, thereby insulating the bond pads from exposure at a sidewall of the stacked semiconductor package.