A method includes removing a first dummy gate structure to form a recess around a first nanostructure and a second nanostructure; depositing a sacrificial layer in the recess with a flowable chemical vapor deposition (CVD); and patterning the sacrificial layer to leave a portion of the sacrificial layer between the first nanostructure and the second nanostructure. The method further include depositing a first work function metal in first recess; removing the first work function metal and the portion of the sacrificial layer from the recess; depositing a second work function metal in the recess, wherein the second work function metal is of an opposite type than the first work function metal; and depositing a fill metal over the second work function metal in the recess.

Methods of depositing thermally conductive polymeric films are described. Each of the methods include flowing a first precursor over a substrate; removing a first precursor effluent comprising the first precursor; flowing a second precursor over the substrate to react with the first precursor to form the polymeric film on the substrate; and removing a second precursor effluent comprising the second precursor. The methods may include performing a metal deposition process. The methods may include performing a post-treatment process, such as a heat treatment process.

In a method for forming a dielectric isolation structure or container, ion implantation is performed to form a buried implant region in a base semiconductor material. Trenches are formed in the base semiconductor material that access the buried implant region. The buried implant region is removed by etching via the trenches to form a lateral undercut region connected with the trenches. The lateral undercut region and the trenches are filled with dielectric material to form a dielectric bottom region and annular dielectric sidewall of the dielectric isolation structure. By forming of the trenches and the filling of the trenches in two or more iterations, with the removal of the buried implant region being performed after one of these iterations, detachment and self-collapse of the contained portion of base semiconductor material is avoided.

Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include treating a substrate comprising a carbon-containing surface and a silicon-containing surface with one or more of ozone or hydrogen peroxide to passivate the silicon-containing surface. In one or more embodiments, a carbon-containing layer is then selectively deposited on the carbon-containing surface and not on the silicon-containing surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the carbon-containing surface and not on the silicon-containing surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate.

A method of depositing material and a system for depositing material are disclosed. Exemplary methods include dosing a substrate with a precursor and/or reactant while varying a pressure within the reaction chamber.

In one exemplary aspect, the present disclosure is directed to a method for lithography patterning. The method includes providing a substrate and forming a target layer over the substrate. A patterning layer is formed by depositing a first layer having an organic composition having a composition including at least 50 atomic percentage carbon; depositing a second layer including silicon; and depositing a photosensitive layer on the second layer. In some implementations, the first layer is deposited by ALD, CVD, or PVD processes.

A method of selectively depositing a material on a non-metallic surface relative to a metallic surface is disclosed. An exemplary method includes using a reactant to selectively form an inhibitor layer on the metallic surface and subsequently depositing the material on the non-metallic surface.