A semiconductor package structure include a silicon substrate, a plurality of dies on the silicon substrate, a mold layer between the plurality of dies, a metal layer covering an upper side of the mold layer and at least a part of upper sides of each of the plurality of dies, and including an opening that exposes a part of the upper side of at least one die among the plurality of dies, and a temperature controller configured to control a temperature of the plurality of dies, the temperature controller including a body defining a circulation region configured to circulate a fluid for controlling the temperature of the plurality of dies, and a passage part configured to allow the fluid to flow into or out of the circulation region, and the fluid in the circulation region being in direct contact with exposed upper sides of the plurality of dies.

A method of manufacturing a semiconductor package may include providing a semiconductor chip, forming redistribution patterns, which are provided on a top surface of the semiconductor chip and are electrically connected to the semiconductor chip, forming a protection layer to cover top surfaces of the redistribution patterns, forming under-bump protection patterns on the protection layer, and forming under-bump patterns, which are provided on the protection layer and are electrically connected to the redistribution patterns. The under-bump protection patterns may be spaced apart from each other.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

A method includes forming a package component, including forming a thermal via extending through a substrate; and bonding a die to the thermal via; attaching the thermal via of the package component to a first conductive pad of a package substrate, wherein the package substrate includes a heat pipe underneath the first conductive pad; and attaching a support structure to a second conductive pad of the package substrate, wherein the heat pipe is underneath the second conductive pad, wherein the support structure includes a first thermoelectric cooler.

A semiconductor package may include a first semiconductor die having a first width; a second semiconductor die on the first semiconductor die, the second semiconductor die having a second width that is smaller than the first width; and a mold layer at least partially covering a side surface of the second semiconductor die, and a top surface of the first semiconductor die, wherein the first semiconductor die comprises at least one first detection pattern, the at least one first detection pattern being on the top surface of the first semiconductor die and in contact with a bottom surface of the mold layer.

A semiconductor package may include a redistribution structure, a semiconductor chip on a surface of the redistribution structure, a UBM pad on an opposite surface of the redistribution structure, a barrier pattern on at least a portion of a lower surface of the UBM pad and surrounding a side surface of the UBM pad, and a connection bump on the lower surface of the UBM pad.

Provided is a semiconductor package including: a substrate including a first surface a and second surface opposite to the first surface, the substrate further including a first cavity extending from the first surface to the second surface; first and second lower semiconductor chips, wherein the first and second lower semiconductor chips are vertically stacked in the first cavity; a first redistribution substrate on the first surface of the substrate; a first upper semiconductor chip on the first redistribution substrate; a second upper semiconductor chip on the first redistribution substrate and horizontally spaced apart from the first upper semiconductor chip; and a first bridge chip in the first redistribution substrate that connects the first and second upper semiconductor chips, wherein the first lower semiconductor chip is spaced apart from the first redistribution substrate, and wherein the second lower semiconductor chip is directly connected to the first redistribution substrate.

Systems and methods are provided for three-dimensional (3-D) stacking of semiconductor dies in a face-to-back staggered pattern, enabling high-density integration and improved electrical performance in semiconductor assemblies. In one example, hybrid bonding techniques, which incorporate both electrical and mechanical connections, are employed to reliably bond semiconductor die in multiple layers with precise alignment.

The disclosed interposer package can include a plurality of stacked circuit dies. The interposer package can additionally include a first interposer connected to the plurality of stacked circuit dies. The interposer package can also include a second interposer connected to the first interposer. Various other methods, systems, and computer-readable media are also disclosed.

A semiconductor package including a redistribution structure, a first capacitor die on the redistribution structure, a 3D integrated circuit structure on the redistribution structure, and next to the first capacitor die, a logic die on the first capacitor die, and on the 3D integrated circuit structure;, and a memory stack on the 3D integrated circuit structure. The 3D integrated circuit structure including a second capacitor die and a buffer die on the second capacitor die.