A semiconductor device includes a first chip and a second chip. The first chip includes a first substrate on which a first transistor is formed. The second chip is provided above the first chip and includes a second substrate on which a second transistor is formed. The second substrate includes a first insulating region and a second insulating region each penetrating the second substrate. The first chip and the second chip are electrically connected to each other via a first group of through vias penetrating the first insulating region and a second group of through vias penetrating the second insulating region. The first group of through vias is arranged at a first pitch, and the second group of through vias is arranged at a second pitch different from the first pitch.

A device package includes a first die directly bonded to a second die at an interface, wherein the interface comprises a conductor-to-conductor bond. The device package further includes an encapsulant surrounding the first die and the second die and a plurality of through vias extending through the encapsulant. The plurality of through vias are disposed adjacent the first die and the second die. The device package further includes a plurality of thermal vias extending through the encapsulant and a redistribution structure electrically connected to the first die, the second die, and the plurality of through vias. The plurality of thermal vias is disposed on a surface of the second die and adjacent the first die.

A packaging structure for a light emitter pixel array includes a plurality of pixels, with at least some pixels laterally separated from each other with a pixel light confinement structure. An inorganic substrate having a top redistribution layer is attached to the plurality of pixels and at least one through silicon via containing an electrical conductor is defined to pass through the inorganic substrate and support an electrical coupling with the top redistribution layer.

A semiconductor package includes a package substrate, a power module on a first surface of the package substrate, a connector on the first surface of the package substrate, the connector being horizontally spaced apart from the power module, a first semiconductor chip on a second surface of the package substrate opposite to the first surface, and a first heat radiator on the second surface of the package substrate, the first heat radiator covering the first semiconductor chip. The first semiconductor chip vertically overlaps the power module, and the first semiconductor chip is electrically connected through the package substrate to the power module.

The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor device package. In certain embodiments, a glass or silicon substrate is patterned by laser ablation to form structures for subsequent formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor device package, which may have one or more embedded double-sided dies therein. In certain embodiments, an insulating layer is formed over the substrate by laminating a pre-structured insulating film thereon. The insulating film may be pre-structured by laser ablation to form structures therein, followed by selective curing of sidewalls of the formed structures.

An electronic product includes a number of die and an interposer. The die are coupled to the interposer. Each respective die includes an edge integrity detection structure extending along at least part of an edge of the respective die. The interposer includes at least one pad coupled to at least one edge integrity detection structure of the die.

A semiconductor device assembly includes a plurality of stacks of semiconductor devices, each including multiple devices operably coupled by TSVs to external package contacts through an RDL, and a device connection layer formed over the plurality of stacks and including a first plurality of contacts coupled to the TSVs, a second plurality of contacts facing away from the TSVs, a first plurality of conductors operably coupling contacts of the first plurality to corresponding contacts of the second plurality, and a second plurality of conductors operably coupling contacts of the second plurality to other contacts of the second plurality. The assembly further includes a multi-reticle semiconductor device disposed over the device connection layer and including a continuous semiconductor substrate having a plurality of circuit regions separated by a reticle-edge region absent any electrical conductors. The second plurality of conductors in the device connection layer operably interconnect the plurality of circuit regions.

A 3D device including: a first level including first transistors, a first interconnect; a second level including second transistors, the second level overlaying the first level and bonded to each other includes metal to metal bonding regions; at least four functional units each includes a first circuit which includes a portion of the first transistors; a redundancy circuit, where each of the at least four functional units includes a second circuit which includes a portion of the second transistors, and includes at least one memory control circuit and at least one memory array; where each of the at least four functional units includes a vertical connectivity structure which includes a plurality of pillars which provides electrical control connection between the first circuit and the second circuit; and a third transistor and a fourth transistor electrically connected to each other and are at least 100 mm apart.

In one example, a semiconductor device comprises a first substrate comprising a first conductive structure, a first body over the first conductive structure and comprising an inner sidewall defining a cavity in the first body, a first interface dielectric over the first body, and a first internal interconnect in the first body and the first interface dielectric, and coupled with the first conductive structure. The semiconductor device further comprises a second substrate over the first substrate and comprising a second interface dielectric, a second body over the second interface dielectric, and a second conductive structure over the second body and comprising a second internal interconnect in the second body and the second interface dielectric. An electronic component is in the cavity, and the second internal interconnect is coupled with the first internal interconnect. Other examples and related methods are also disclosed herein.

Provided is a semiconductor package including a first wiring structure including a first wiring and a first wiring insulating layer on the first wiring, a first semiconductor chip on the first wiring structure, and a molding member on the first semiconductor chip, wherein the first wiring includes a first wiring via and a first wiring line, wherein the first wiring structure includes a first layer and a second layer, wherein the first wiring via is in each of the first layer and the second layer, the first wiring via in the first layer and the first wiring via in the second layer contact each other in a vertical direction, and wherein a size of the first wiring via in the first layer is less than a size of the first wiring via in the second layer.