The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

A method includes forming a stack of semiconductor layers over a substrate. The stack includes a first layer including a first semiconductor material over the substrate, a second layer including a second semiconductor material over the first layer, a third layer including the first semiconductor material over the second layer, and a fourth layer including a third semiconductor material over the third layer. The method further includes patterning the stack to form a semiconductor structure, forming a sacrificial gate over the semiconductor structure, forming epitaxial regions adjacent to the sacrificial gate, removing the sacrificial gate to form a recess, selectively removing the first layer and the third layer from the semiconductor structure through the recess to form an opening, selectively removing the second layer from the semiconductor structure through the recess to expand the opening, and forming a replacement gate in the recess and the opening.

Provided is a method for producing a decomposing/cleaning composition which improves etching speed retention. In particular, a method for producing a decomposing/cleaning composition which contains (A) an N-substituted amide compound in which a hydrogen atom is not directly bonded to a nitrogen atom and (B) a quaternary alkyl ammonium fluoride or a hydrate thereof is provided, the method having a preparation step for mixing the (A) and (B) components in an inert gas atmosphere.

A semiconductor substrate cleaning method including removing an adhesive layer provided on a semiconductor substrate by use of a remover composition, wherein the remover composition contains a solvent but no salt; and the solvent includes an organic solvent represented by any of formulae (L0) to (L4). ##STR00001##

There are provided a post-CMP cleaning composition and a post-CMP cleaning method, which can more effectively reduce impurities remaining on a surface of polished objects to be polished. The post-CMP cleaning composition is used for cleaning polished objects to be polished as objects to be polished, which has been subjected to a chemical mechanical polishing (CMP), the post-CMP cleaning composition containing water, a water-soluble polymer, and a surfactant, in which, when a surface of the polished objects to be polished is covered with the post-CMP cleaning composition, in a case where the surface is observed with an atomic force microscope, a restoring adhesion force which is a force acting between a probe of the atomic force microscope, which has a tip radius of curvature of 2 nm or more and 12 nm or less, and the surfactant is more than 0 N/m and 0.07 N/m or less, and a surface roughness of an adsorption layer which is formed by adsorption of the surfactant over the surface of the polished objects to be polished is more than 0 nm and 0.4 nm or less.

Provided is a composition, a method of treating a metal-containing film by using the composition, and a method of preparing a semiconductor device by using the composition. The composition may include hydrofluoric acid and an etching controller and the composition may not include hydrogen peroxide. The etching controller may include at least one compound represented by Formula 1:

##STR00001##

A description of Formula 1 is provided in the present specification.

Representative implementations provide techniques for processing integrated circuit (IC) dies and related devices, in preparation for stacking and bonding the devices. The disclosed techniques provide removal of processing residue from the device surfaces while protecting the underlying layers. One or more sacrificial layers may be applied to a surface of the device during processing to protect the underlying layers. Processing residue is attached to the sacrificial layers instead of the device, and can be removed with the sacrificial layers.

A substrate processing apparatus and a substrate processing method using plasma capable of controlling an etch rate and/or uniformity according to a position of a substrate are provided. The substrate processing apparatus comprises a first space disposed between an electrode and an ion blocker; a second space disposed between the ion blocker and a shower head; a processing space for processing a substrate under the shower head; a first gas supply module for providing a first gas for generating plasma in the first space; a second gas supply module for providing a second gas to be mixed with the effluent of the plasma in the processing space; and a third gas supply module for providing a third gas to be mixed with the effluent of the plasma in the processing space.

Provided are a wafer cleaning method capable of uniformly cleaning an entire area of a wafer, and a wafer cleaning apparatus to which the method is applied. The method includes positioning a cleaning tool to face a surface of the wafer requiring cleaning; supplying a cleaning liquid containing ions to an area between the wafer and the cleaning tool; adjusting a spacing between a surface of the wafer and the cleaning tool for a viscosity of the cleaning liquid therebetween to be controlled by an electric field; and relatively rotating the wafer from the cleaning tool while the electric field being applied to at least a portion of the cleaning liquid, thereby cleaning the surface of the wafer with the cleaning liquid.

A composition for semiconductor processing according to the disclosure contains (A) a compound represented by the following general formula (1), (B) a compound represented by the following general formula (2), (C) a compound having at least one functional group selected from the group consisting of an amino group and a salt thereof and a hydroxyl group (excluding the compound represented by the following general formula (1), a compound having a carboxyl group and a nitrogen-containing heterocyclic compound) and (D) a liquid medium, and, when the content of the (A) component is indicated by M.sub.A [mass %] and the content of the (B) component is indicated by M.sub.B [mass %], M.sub.A/M.sub.B is 1.010.sup.2 to 1.010.sup.4.
R.sub.2N(OH)(1)
R.sub.2NH(2) (In the formula (1) and the formula (2), R's each independently represent an alkyl group having 1 to 4 carbon atoms).