Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a thermal treatment chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a metal deposition chamber coupled with the second transfer chamber.

[Problem] To obtain a substrate cleaning solution capable of cleaning a substrate and removing particles. [Means for Solution] To provide a substrate cleaning solution comprising an insoluble or hardly soluble solute (A), a soluble solute (B), and a solvent (C), wherein the solvent (C) comprises water (C-1); and the content of the soluble solute (B) is 0.1 to 500 mass % based on water (C-1).

Provided are compositions and methods useful in the post-CMP cleaning of microelectronic devices, in particular, devices which contain one or more surfaces comprising hydrophobic carbon or SiC. In general, the compositions comprise a chelating agent; a water-miscible solvent; a reducing agent; and a pH adjustor, wherein the composition has a pH of about 2 to about 13.

A cleaning method that includes removing an adhesive residue remaining on a debonded semiconductor substrate with a cleaning agent composition. The cleaning agent composition contains a tetrahydrocarbylammonium fluoride, a ring-structure-having ether compound that including at least one cycloalkyl (chain alkyl) ether compound, cycloalkyl (branched alkyl) ether compound, or a di(cycloalkly) ether compound, and an organic solvent that includes a lactam compound represented by formula (1), where R.sup.101 represents a C1 to C6 alkyl group; and R.sup.102 represents a C1 to C6 alkylene group.

##STR00001##

A substrate processing method includes a processing film forming step in which a processing liquid is supplied to a front surface of a substrate to solidify or cure the processing liquid on the front surface of the substrate, thereby forming a processing film on the front surface of the substrate, an etching component forming step in which the processing film is subjected to etching component forming processing to form an etching component in the processing film, an etching step in which a surface layer portion of the substrate is etched by the etching component formed in the etching component forming step, and a processing film removing step in which a peeling liquid is supplied to a front surface of the processing film, thereby peeling the processing film from the front surface of the substrate and removing the processing film from the front surface of the substrate.

The present invention provides a composition which is suppressed in decrease of the etching rate over time. A composition which contains; at least one of a quaternary alkyl ammonium fluoride and a hydrate of a quaternary alkyl ammonium fluoride; (A) an N-substituted amide compound that has no active hydrogen on a nitrogen atom and (B) a dipropylene glycol dimethyl ether, which serve as aprotic solvents; and an antioxidant.

The present disclosure generally relates to semiconductor processing tool cleaning, such as may be included in semiconductor processing for manufacturing an integrated circuit (IC). In an example, a cleaning process is performed on an interior surface of a chamber of a semiconductor processing tool. The cleaning process includes flowing a reactive gas into an interior volume of the chamber. The interior volume is defined at least in part by the interior surface. The reactive gas consists exclusively of boron trichloride (BCl.sub.3). After performing the cleaning process, a material layer over a semiconductor substrate is etched in the chamber.

Plasma processing apparatuses, substrate bonding systems, and substrate bonding methods are provided. The plasma processing apparatus includes a plasma process chamber that includes a process space, a load-lock chamber connected to the process space, a first vacuum pump that adjusts a pressure of the load-lock chamber, a process gas supply that supplies the process space with a process gas, and an H.sub.2O supply that supplies the process space with H.sub.2O. The plasma process chamber includes a chuck that supports a substrate and a plasma electrode to which a radio-frequency (RF) power is applied.

Semiconductor devices and methods of forming the same are provided. A method according to the present disclosure includes a substrate and a fin-shaped that include sacrificial layers interleaved by channel layers, forming a dummy gate stack over the fin-shaped structure, forming a gate spacer layer along sidewalls of the dummy gate stack, forming source/drain trenches in the fin-shaped structure, partially etching the sacrificial layers to form inner spacer recesses, forming inner spacer features in the inner spacer recesses, forming source/drain features in the source/drain trenches, removing the dummy gate stack, selectively etching the sacrificial layers to release the channel layers channel members, cleaning the plurality of channel members, epitaxially depositing a semiconductor layer over the channel members, annealing the semiconductor layer, and forming a gate structure to wrap around each of the channel members.

An object of the invention is to provide a method of cleaning semiconductor substrates that is excellent in abrasive particle removing performance with respect to semiconductor substrates having undergone CMP, as well as a cleaning liquid for semiconductor substrates having undergone CMP. The invention provides a method of cleaning semiconductor substrates, the method comprising a cleaning step of cleaning, by use of a cleaning liquid, a semiconductor substrate having undergone CMP using a polishing liquid containing abrasive particles. The semiconductor substrate contains metal, and the cleaning liquid has a pH of more than 7 at 25 C. The cleaning liquid comprises: a chelating agent; a specific component A; and an anticorrosive. The method satisfies Condition 1 that a product of a contact angle ratio obtained by a specific test method 1 and a specific degree of agglomeration obtained by a specific test method 2 is not more than 15.