A substrate processing method includes preparing a substrate including a silicon layer, which is an example of an etching target that is at least one of silicon and polysilicon; and etching the etching target by supplying the substrate with hot AOM, which is an example of high-temperature ammonia water having a temperature higher than room temperature and an increased dissolved oxygen concentration.

A system for improving yield and increasing throughput on processes that remove flux and flux residues from openings between 3D semiconductor structures. The system employs high flow, directed, pressurized nitrogen to assist in de-wetting the areas between semiconductor devices where solder bumps or micro bumps attach one device to another.

A wafer centering adjustment method, comprising: before a wafer (4) is etched, a wafer centering system (1) confirms whether the center of the wafer (4) coincides with the center of the first adsorption platform (3), and if not, the wafer centering system (1) corrects the position of the wafer (4). After the etching of the wafer (4) is completed, a wafer edge cleaning effect detection system (2) confirms whether the center of the wafer (4) coincides with the center of the first adsorption platform (3) during the process of etching, and obtains the second offset data. The wafer edge cleaning effect detection system (2) feeds back the second offset data to the wafer centering system (1). Before etching the next wafer, the wafer centering system (1) obtains the first offset data and preforms correction firstly, and then makes a secondary correction to the position of the wafer according to the second offset data obtained after the previous wafer is etched, thereby realizing a closed-loop control of the centering adjustment apparatus. In addition, the degree of coincidence between the center of the wafer and the center of the first adsorption platform is greatly improved by means of the secondary correction, thereby effectively guaranteeing the uniformity of the edge etching width of the wafer.

Described herein is a method of using a cleaning composition in combination with one or more oxidants for removing post-etch or post-ash residue from the surface of a semiconductor substrate and/or for oxidative etching or partially oxidative etching of a layer or mask. Also described herein is the cleaning composition and a method of using the cleaning composition for removing post-etch or post-ash residue from the surface of a semiconductor substrate. Also described herein is a wet-etch composition including the cleaning composition and one or more oxidants as well as a method of using the wet-etch composition. Also described herein are a process for the manufacture of a semiconductor device from a semiconductor substrate and a kit including the cleaning composition and one or more oxidants.

A method for processing a substrate includes providing the substrate into a processing chamber, adding a processing fluid into the processing chamber, adding a dry fluid to the processing chamber while draining the processing fluid from the processing chamber, and releasing the dry fluid from the processing chamber in a gaseous phase.

Semiconductor devices and processes for manufacturing semiconductors are described. A semiconductor device can include a drift region formed on a Silicon Carbide substrate. The semiconductor device can include a trench that penetrates through a source region and a channel and reaches the drift region. The semiconductor device can include an oxide region lining the trench. The oxide region can include a bottom portion, a lower side portion and an upper side portion. A thickness of the bottom portion and a thickness of the lower side portion can be greater than a thickness of the upper side portion. The semiconductor device can include a gate electrode formed in the trench lined with the oxide region. The semiconductor device can include a shield region in contact with a bottom portion of the trench. A width of the semiconductor region can be less than or equal to a width of the trench.

A method of processing a silicon surface includes using a first radical species to remove contamination from the surface and to roughen the surface; and using a second radical species to smooth the roughened surface. Reaction systems for performing such a method, and silicon surfaces prepared using such a method, also are provided.

The sublimable film formation composition of the present invention includes a sublimable substance and a solvent in which a saturation solubility of the sublimable substance is more than 10% by mass.

A method of removing particles from a surface of a wafer, the method including cleaning the wafer with an aqueous first solution. The aqueous first solution including a mixture of a first detergent, a second detergent, and a third detergent. The first detergent including an aqueous solution comprising a pH buffer, an inorganic alkali, a wetting and emulsifying agent, and a chelating agent. The second detergent including an aqueous solution comprising an emulsifier, a pH buffer, an inorganic alkali, a double electric agent, and a chelating agent. The third detergent including an aqueous solution comprising a pH buffer, a wetting and penetration agent, an antistatic and emulsifying agent, and a chelating agent.

A treatment device and a method treat semiconductor objects with an aqueous treatment fluid. The treatment device has a treatment chamber and a supply device for supplying the treatment chamber with the aqueous treatment fluid. The supply device includes a chemical supply unit with at least two chemical containers and a water supply unit. At least one water line of the water supply unit and at least two chemical transport lines of the chemical supply unit are directly or indirectly connected with a single treatment fluid feed line. The single treatment fluid feed line is line-connected with the distribution device arranged in the treatment chamber.