Embodiments are generally directed to package stacking using chip to wafer bonding. An embodiment of a device includes a first stacked layer including one or more semiconductor dies, components or both, the first stacked layer further including a first dielectric layer, the first stacked layer being thinned to a first thickness; and a second stacked layer of one or more semiconductor dies, components, or both, the second stacked layer further including a second dielectric layer, the second stacked layer being fabricated on the first stacked layer.

A memory subsystem includes an I/O die, a host device, and a stacked memory structure. The I/O die includes a first surface and a second surface. The host device is stacked on the first surface of the I/O die to be at least partially bonded thereto. The stacked memory structure is stacked on the first surface of the I/O die to be at least partially bonded thereto. The I/O die includes a plurality of conductive pads arranged on the first surface. The stacked memory structure includes a plurality of memory dies stacked in a shingled manner so that a plurality of bonding pads is exposed, and a plurality of vertical wires respectively connecting the bonding pads of the plurality of memory dies to the plurality of conductive pads. The host device and the stacked memory structure is configured to interface with each other through the I/O die.

Systems, devices, and manufacturing methods of a semiconductor device are provided. In one aspect, a semiconductor device includes a first semiconductor structure and a second semiconductor structure. The first semiconductor structure includes a memory array. The memory array includes a first memory subarray and a second memory subarray stacked along a first direction. A first row of memory cells of the first memory subarray and a first row of memory cells of the second memory subarray are coupled to a same bit line. The same bit line is between the first memory subarray and the second memory subarray along the first direction. The second semiconductor structure includes a control circuitry coupled to the memory array. The semiconductor device includes a second via structure that is coupled to the pad-out structure of the second semiconductor structure through the first via structure and the interconnection structure.

A semiconductor package comprises a base substrate, a first semiconductor chip on the base substrate, a first dam structure which overlaps a corner of the first semiconductor chip from a plan view and is placed on the base substrate and a first fillet layer which is placed vertically between the base substrate and the first semiconductor chip, and vertically between the first dam structure and the first semiconductor chip.

A semiconductor package includes a semiconductor chip including a semiconductor substrate having an active layer, ground chip pads on the semiconductor substrate, and signal chip pads on the semiconductor substrate and a package substrate supporting the semiconductor chip, the package substrate including a substrate insulating layer, a plurality of signal line patterns extending in the substrate insulating layer and electrically connected to the signal chip pads, and a plurality of ground line patterns extending in the substrate insulating layer at a same level as a level of the plurality of signal line patterns and electrically connected to the ground chip pads. At least one of the plurality of ground line patterns extends between the plurality of signal line patterns.

Methods of making a semiconductor device assembly are provided. The methods can comprise providing a first semiconductor device having a first dielectric material at a first surface, providing a carrier wafer having a second dielectric material at a second surface, and forming a dielectric-dielectric bond between the first dielectric material and the second dielectric material. At least one of the first surface and the second surface includes a region of hydrophobic material electrically isolated from any circuitry of the first semiconductor device and configured to have a reduced bonding strength to a facing region relative to the dielectric-dielectric bond. The method can further include stacking one or more second semiconductor devices over the first semiconductor device to form the semiconductor device assembly, and removing the semiconductor device assembly from the carrier wafer.

A package structure according to the present disclosure includes a bottom substrate, a bottom interconnect structure over the bottom substrate, a top interconnect structure disposed over the bottom interconnect structure and including a metal feature, a top substrate over the top interconnect structure, and a protective film disposed on the top substrate. The protective film includes an interfacial layer on the top substrate, at least one dipole-inducing layer on the interfacial layer, a moisture block layer on the at least one dipole-inducing layer, and a silicon oxide layer over the moisture block layer. The at least one dipole-inducing layer includes aluminum oxide, titanium oxide or zirconium oxide.

A method for automatically generating chip identifier for semiconductor dies in a stacked structure is provided. The method includes the following steps: obtaining a first semiconductor die and a second semiconductor die, wherein the first semiconductor die and the second semiconductor die include a first identifier generation circuit and a second identifier generation circuit, respectively; forming a stacked structure by stacking the second semiconductor die on the first semiconductor die, wherein the first identifier generation circuit is electrically connected to the second identifier generation circuit; and generating a first chip identifier and a second chip identifier for the first semiconductor die and the second semiconductor die by the first identifier generation circuit and the second identifier generation circuit, respectively. The second chip identifier is generated using the first chip identifier and an auxiliary input signal.

Provided is a semiconductor package including a plurality of first semiconductor chips respectively including a first semiconductor substrate and a plurality of first through electrodes penetrating the first semiconductor substrate, a second semiconductor chip on the plurality of first semiconductor chips, the second semiconductor chip including a second semiconductor substrate and a plurality of second through electrodes penetrating the second semiconductor substrate, a third semiconductor chip on the second semiconductor chip, the third semiconductor chip including a third semiconductor substrate and a plurality of third through electrodes penetrating the third semiconductor substrate, and a first encapsulation material on the plurality of first semiconductor chips, a planar shape of the second semiconductor chip is greater than a planar shape of each first semiconductor chip of the plurality of first semiconductor chips, and a planar shape of the third semiconductor chip is greater than the planar shape of the second semiconductor chip.

According to one embodiment, a semiconductor memory device includes: a first chip including a substrate defining a first region and a second region; and a second chip contacting the first chip in a first direction, the second chip being electrically connected to the first chip via a plurality of connection pads at a boundary region. The second chip includes a memory cell array, the memory cell array including a source line, word lines below the source line, and a memory pillar. The second chip further includes contacts extending in the first direction and each electrically connected to one of the connection pads, a conductor pattern contacting upper ends of the contacts, and a first interconnect extending above the conductor pattern and electrically connected to the conductor pattern.