The present disclosure provides an electronic device including a first electronic unit, a second electronic unit, a circuit layer, a protection layer, and a flexible member. The first electronic unit is electrically connected to the second electronic unit through the circuit layer. The protection layer is disposed corresponding to the first electronic unit and the second electronic unit, and the protection layer has an opening. At least a portion of the flexible member is disposed in the opening. The protection layer has a first Young's modulus, the flexible member has a second Young's modulus, and the first Young's modulus is greater than the second Young's modulus.

Example implementations include a method of mass transfer of display elements, by depositing one or more resist layers between one or more display elements disposed on a photoemitting layer, depositing at least one stress buffer layer between the resist layers, removing the resist layer and at least a portion of the photoemitting layer disposed in contact with the resist layers to form resist layer gaps on a wafer substrate, dicing the wafer substrate at the resist layer gaps to form at least one wafer die, separating the wafer substrate from the display elements by irradiation at corresponding first surfaces of the display elements, removing the stress buffer layers from the wafer die, and bonding the portion of the display elements to a first handler substrate at one or more electrode pads of the portion of the display elements.

A die includes a substrate, a conductive pad, a connector a protection layer, and a passivation layer. The conductive pad is disposed over the substrate. The connector is disposed on the conductive pad. The connector comprises a seed layer and a conductive post on the seed layer. The protection layer laterally covers the connector. The passivation layer is disposed between the protection layer and the conductive pad. The conductive post is separated from the passivation layer and the protection layer by the seed layer.

A semiconductor device includes a first die pad, a first semiconductor element, a first lead, a first conductive member, and a sealing resin. The first conductive member is conductively bonded to the first semiconductor element and the first lead. The first die pad, the first semiconductor element, and the first conductive member are covered with the sealing resin. The first lead protrudes from the first side surface of the sealing resin. The first distance D1, the second distance D2, and the third distance D3 satisfy the relationship D1>D2D3. In the first direction z, the first conductive member is located between the first mounting surface of the first die pad and the top surface of the sealing resin.

A semiconductor device includes a first die pad, a first semiconductor element, a first lead, a first conductive member, and a sealing resin. The first conductive member is conductively bonded to the first semiconductor element and the first lead. The first die pad, the first semiconductor element, and the first conductive member are covered with the sealing resin. The first lead protrudes from the first side surface of the sealing resin. The first distance D1, the second distance D2, and the third distance D3 satisfy the relationship D1>D2D3. In the first direction z, the first conductive member is located between the first mounting surface of the first die pad and the top surface of the sealing resin.

A semiconductor device includes a first conductive portion, a second conductive portion, a first semiconductor element, a second semiconductor element, two first terminals, a second terminal, a third terminal, a first conductive member, a second conductive member, a plurality of first control terminals, a plurality of second control terminals, and a sealing resin. In a first direction orthogonal to the thickness direction, the first conductive portion and the second conductive portion are spaced apart from each other. The second terminal and the second conductive member form a conduction path located outside the plurality of first control terminals in a second direction orthogonal to the thickness direction and the first direction.

A semiconductor device includes a first conductive portion, a second conductive portion, a first semiconductor element, a second semiconductor element, two first terminals, a second terminal, a third terminal, a first conductive member, a second conductive member, a plurality of first control terminals, a plurality of second control terminals, and a sealing resin. In a first direction orthogonal to the thickness direction, the first conductive portion and the second conductive portion are spaced apart from each other. The second terminal and the second conductive member form a conduction path located outside the plurality of first control terminals in a second direction orthogonal to the thickness direction and the first direction.

An electronic device comprises multiple integrated circuit (IC) dice disposed on a package substrate having a substrate area, a mold layer that includes the IC dice, and multiple conductive pillars extending from a surface of at least one IC die to a first surface of the mold layer, and an interposer layer extending over the substrate area and comprised of a stiffening material more rigid than a material of the package substrate. The interposer layer includes multiple electrically conductive through layer vias contacting the conductive pillars at a first surface of the mold layer and extending through the stiffening material to a second surface of the interposer layer.

A semiconductor module includes a first logic chip including a first surface and a second surface parallel to a first direction and a second direction, a first semiconductor chip including a third surface and a fourth surface, arranged on the second surface, and connected to the first logic chip, and a semiconductor cube arranged on the fourth surface, the semiconductor cube including a plurality of second semiconductor chips stacked in the first direction. The second semiconductor chip includes a first inductor arranged in a third direction perpendicular to the first and second directions, and the first semiconductor chip includes a plurality of routers and a second inductor arranged parallel to the fourth surface. The plurality of circuits in the first logic chip and the plurality of circuits in the first semiconductor chip are connected using the plurality of routers, and enable contactless communication with the plurality of second semiconductor chips.

A semiconductor module includes a first logic chip including a first surface and a second surface parallel to a first direction and a second direction, a first semiconductor chip including a third surface and a fourth surface, arranged on the second surface, and connected to the first logic chip, and a semiconductor cube arranged on the fourth surface, the semiconductor cube including a plurality of second semiconductor chips stacked in the first direction. The second semiconductor chip includes a first inductor arranged in a third direction perpendicular to the first and second directions, and the first semiconductor chip includes a plurality of routers and a second inductor arranged parallel to the fourth surface. The plurality of circuits in the first logic chip and the plurality of circuits in the first semiconductor chip are connected using the plurality of routers, and enable contactless communication with the plurality of second semiconductor chips.