Patent classifications
H10W74/121
PHYSICALLY UNCLONABLE FUNCTION DEVICE
A physically unclonable function (PUF) device comprises a plurality of conductors, at least some of which are arranged so that they interact electrically and/or magnetically with one another. A media surrounds at least a portion of each of the conductors, and circuitry is configured for applying an electrical challenge signal to at least one of the conductors and for receiving an electrical output from at least one of the other conductors to generate an identifying response to the challenge signal that is unique to the device. The media comprises a plurality of interactive regions, the interactive regions having an electrical and/or magnetic response characteristic which is permanently altered in response to a predetermined environmental event, and the identifying response is altered with the response characteristic.
SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME
A semiconductor package may include a first redistribution substrate, a first semiconductor chip and a second semiconductor chip, which are mounted on the first redistribution substrate and are horizontally spaced apart from each other, a first mold layer provided to surround the first and second semiconductor chips and expose bottom surfaces of the first and second semiconductor chips, a bridge chip mounted on the bottom surfaces of the first and second semiconductor chips, a second mold layer provided on the first redistribution substrate to embed the first and second semiconductor chips, the first mold layer, and the bridge chip, a second redistribution substrate disposed on the second mold layer, an upper package mounted on the second redistribution substrate, and a vertical connection structure provided adjacent to the first mold layer to connect the first and second redistribution substrates to each other. The first redistribution substrate may have a recess provided in a top surface of the first redistribution substrate, and the bridge chip may be disposed in the recess.
PACKAGE AND METHOD OF FORMING A PACKAGE
A package is provided. The package includes an electronic chip and at least one magnesium hydroxide layer (Mg(OH).sub.2) over the electronic chip. A method of forming the package is also described.
POWER CHIP PACKAGE STRUCTURE
A power chip package structure includes a power chip, a first transmission member, and at least two second transmission members, an encapsulant, and a diamond-like carbon (DLC) layer. The first transmission member and the at least two second transmission members are connected to the power chip. The power chip, the first transmission member, and the at least two second transmission members are embedded in the encapsulant. The encapsulant has a layout surface that is coplanar with a first end surface of the first transmission member and a second end surface of each of the at least two second transmission members. The DLC layer is formed on the layout surface with terminals. The DLC layer surrounds the first end surface to jointly form a first solder-receiving slot, and the DLC layer surrounds each of the two second end surfaces to jointly form a second solder-receiving slot.
FAN-OUT SEMICONDUCTOR PACKAGE
A fan-out semiconductor package includes a semiconductor chip; a metal pillar disposed on the semiconductor chip; a bonding metal layer disposed on the metal pillar; a bonding wire disposed on the bonding metal layer; a sealing layer over the semiconductor chip, and surrounding the metal pillar, the bonding metal layer, and the bonding wire; and a redistribution layer disposed on the sealing layer and the bonding wire.
HIGH BANDWIDTH MEMORY AND METHOD FOR MANUFACTURING THE SAME
In an embodiment of the present inventive concept, a high bandwidth memory includes a base die, and a semiconductor stack disposed on the base die, the semiconductor stack comprising a plurality of underfill members and a plurality of memory dies that are alternately stacked. Each of the plurality of underfill members includes first sides, each of the plurality of memory dies includes second sides, and each of the first sides is recessed from a corresponding second side.
PACKAGE FOR MULTI-SENSOR CHIP
An integrated sensor component includes a chip carrier and a first semiconductor chip and a second semiconductor chip, wherein either both semiconductor chips are arranged on the chip carrier or (alternatively) the second semiconductor chip is arranged on the chip carrier and the first semiconductor chip is arranged on the second semiconductor chip (chip-on-chip). The integrated sensor component further includes a first sensor element integrated in the first semiconductor chip and a second sensor element integrated in the second semiconductor chip, as well as a housing formed by a potting compound, which has an opening. Both the first sensor element and the second sensor element are located within the opening so that they can interact with the atmosphere surrounding the sensor component.
SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
An example semiconductor package includes a substrate, a semiconductor chip on the substrate, a heat-dissipation structure on the substrate, heat transfer paste, and a molding layer covering the heat transfer paste. The heat-dissipation structure is horizontally apart from the semiconductor chip. The heat transfer paste is between the semiconductor chip and the heat-dissipation structure. A top surface of the heat transfer paste is at a lower vertical level than a top surface of the heat-dissipation structure.
Heat spreading device and method
In an embodiment, a device includes: a die stack over and electrically connected to an interposer, the die stack including a topmost integrated circuit die including: a substrate having a front side and a back side opposite the front side, the front side of the substrate including an active surface; a dummy through substrate via (TSV) extending from the back side of the substrate at least partially into the substrate, the dummy TSV electrically isolated from the active surface; a thermal interface material over the topmost integrated circuit die; and a dummy connector in the thermal interface material, the thermal interface material surrounding the dummy connector, the dummy connector electrically isolated from the active surface of the topmost integrated circuit die.
Chip package structure
A chip package structure is provided. The chip package structure includes a first redistribution structure having a first surface and a second surface. The first redistribution structure includes a first pad and a second pad, the first pad is adjacent to the first surface, and the second pad is adjacent to and exposed from the second surface. The chip package structure includes a chip package bonded to the first pad through a first bump, wherein a first width of the first pad decreases in a first direction away from the chip package, and a second width of the second pad decreases in the first direction. The chip package structure includes a second bump over the second pad.