Hybrid fanouts for semiconductor device assemblies, and associated methods and systems are disclosed. In one embodiment, at least one edge a first semiconductor die is attached to a molding including through mold vias (TMVs). Conductive traces may be formed on a first side of the first semiconductor die, where the first side includes integrated circuitry coupled to the conductive traces. Moreover, conductive pads may be formed on a surface of the molding, which is coplanar with the first side. The conductive pads are coupled to first ends of the TMVs, where second ends of the TMVs are coupled to bond wires connected to one or more second semiconductor dies that the first semiconductor die carries. Conductive bumps can be formed on the conductive traces and pads such that the first semiconductor die and the molding attached thereto can be directly attached to a printed circuit board.

An electronic chip including a semiconductor substrate in and on which an integrated circuit is formed at least one connection metallization of the integrated circuit formed on the side of a front face of the semiconductor substrate and a first passivation layer covering the front face of the semiconductor substrate, the first passivation layer including openings in line with the connection metallization of the integrated circuit The chip having a second passivation layer covering the side flanks of the semiconductor substrate, the second passivation layer being made of a parylene, and the first passivation layer and the second passivation layer being in contact with each other on the side of the front face of the semiconductor substrate. Methods of making a device are also provided.

Consistent with aspects of the present disclosure, fabrication processes are provided for manufacturing 3-D stacked dies in a staggered pattern. Such processes yield device structures having adequate flatness and provide sufficient alignment for effective hybrid bonding in staggered 3-D die stacked package.

Provided is a semiconductor package including a first semiconductor chip, a plurality of second semiconductor chips stacked on the first semiconductor chip, a step cover layer surrounding side surfaces of the plurality of second semiconductor chips and covering side portions of the plurality of second semiconductor chips, wherein a maximum thickness of the step cover layer is 40 micrometers (m) or less, and a moisture barrier layer covering an outer surface of the step cover layer.

A semiconductor die stack includes a first semiconductor die having a first lattice direction, and a second semiconductor die bonded to the first semiconductor die and having a second lattice direction different than the first lattice direction.

The present disclosure provides a semiconductor package including: a substrate; a socket on the substrate and including a socket body having a mounting region on which a first semiconductor chip is mounted and socket pins penetrating the socket body and electrically connected to the substrate; and one or more second semiconductor chips disposed side by side on the substrate adjacent the socket.

An electronic component embedded substrate may include at least an electronic component including a first terminal surface and a first terminal electrode, the first terminal electrode being on the first terminal surface, a first conductive layer facing the first terminal surface, an insulating layer between the first conductive layer and the first terminal surface, the insulating layer including a via hole penetrating therethrough, the first conductive layer filling the via hole and being connected to the first terminal electrode, and a seed layer in the via hole, the seed layer including a conductive film and an adhesive film, the adhesive film being between the conductive film and a boundary of the via hole.

A semiconductor device includes a circuit substrate, a first semiconductor element, a second semiconductor element, and a connection element. The circuit substrate includes a first pad. The first semiconductor element is disposed on the circuit substrate and includes a second pad and a third pad. The second semiconductor element is disposed on the circuit substrate. The connection element is disposed on the circuit substrate and electrically connects the first semiconductor element and the second semiconductor element. The connection element includes a fourth pad. The second pad is bonded to the first pad through a conductive material, and the third pad is directly bonded to the fourth pad.

Provided is a semiconductor package including a package substrate, a pair of first semiconductor chips on the package substrate and facing each other in a horizontal direction, a pair of second semiconductor chips on the pair of first semiconductor chips and facing each other in the horizontal direction, and a pair of molding members covering a periphery of the pair of second semiconductor chips on the pair of first semiconductor chip and a part of the pair of molding members on the package substrate, each of the pair of molding members include first and second widths in the horizontal direction, the first width in a first region where the pair of second semiconductor chips face each other is less than the second width in a second region where the pair of second semiconductor chips do not face each other.

A package structure includes a circuit substrate, a semiconductor package, a first ring structure and a second ring structure. The semiconductor package is disposed on and electrically connected to the circuit substrate. The first ring structure is attached to the circuit substrate and surrounding the semiconductor package, wherein the first ring structure includes a central opening and a plurality of corner openings extending out from corners of the central opening, the semiconductor package is located in the central opening, and the plurality of corner openings is surrounding corners of the semiconductor package.