In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

A semiconductor package includes a first die and a second die disposed side-by-side, an encapsulant laterally covering the first die and the second die, and an interconnect structure underlying the encapsulant. Each of the first die and the second die includes a front side and a back side opposite to each other. The second die further includes an optical interface at the back side, and a top surface of the back side of the second die and the optical interface are exposed by the encapsulant. The interconnect structure is connected to the front sides of the first and second dies, and the second die is electrically coupled to the first die through the interconnect structure.

A method of manufacturing a semiconductor device includes preparing a device substrate including a plurality of active regions, the device substrate including a substrate, a semiconductor device portion on a first surface of the substrate, and a first bonding layer on the semiconductor device portion, where the first bonding layer includes a first pad and a first insulation layer, forming a preliminary substrate by forming a sacrificial layer on the first bonding layer, bonding the preliminary substrate to a carrier substrate such that the sacrificial layer faces the carrier substrate, forming a second bonding layer on a second surface of the substrate, the second bonding layer including a second pad and a second insulation layer, and cutting the preliminary substrate to separate the plurality of active regions.

A semiconductor package structure and a method for making a semiconductor package. As non-limiting examples, various aspects of this disclosure provide various semiconductor package structures, and methods for making thereof, that comprise a connect die that routes electrical signals between a plurality of other semiconductor die.

A package structure and a method of forming the same are provided. A method includes forming first electrical connectors and second electrical connectors on a first side of an interposer wafer. An integrated circuit die is bonded to the first side of the interposer wafer using the first electrical connectors. A stiffener structure is attached to the first side of the interposer wafer adjacent the integrated circuit die. The stiffener structure covers the second electrical connectors in a plan view. The integrated circuit die and the stiffener structure are encapsulated with a first encapsulant. The interposer wafer and the stiffener structure are singulated to form a stacked structure.

A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a redistribution layer (RDL) module, a first semiconductor module, an interconnection module, a second semiconductor module and a molding material. The first semiconductor module is disposed on the RDL module. The interconnection module is disposed on the RDL module. The second semiconductor module is disposed on the interconnection module. The molding material covers the RDL module and surrounds the first semiconductor module and the second semiconductor module. A top surface of the first semiconductor module and a top surface of the second semiconductor module are exposed by the molding material.

A method to form a first diamond composite wafer, a second diamond composite wafer or a third diamond composite wafer with a predetermined diameter includes the following steps: preparing a plurality of diamond blocks, wherein each diamond block has a dimension smaller than the predetermined diameter; attaching the plurality of diamond blocks to a first semiconductor substrate with the predetermined diameter to form a first temporary composite wafer, wherein a thermal conductivity of the first semiconductor substrate is smaller than that of the diamond block; and filling gaps among the plurality of diamond blocks of the first temporary composite wafer to form the first diamond composite wafer; or attaching the first diamond composite wafer to a second semiconductor substrate with the predetermined diameter to form the second diamond composite wafer, or removing the first semiconductor substrate from the first diamond composite wafer to form the third diamond composite wafer.

An electronic device is provided. The electronic device includes a substrate, a driving circuit, a diode, an optical layer, a light shielding element and an inorganic layer. The driving circuit is disposed on the substrate. The diode is disposed on the substrate and electrically connected to the driving circuit. The optical layer is disposed on the diode and comprising a first curved surface. The light shielding element is disposed on the substrate and adjacent to the optical layer. The inorganic layer is disposed on the substrate. Moreover, the inorganic layer overlaps the optical layer and the light shielding element. The inorganic layer includes a second curved surface overlapping the first curved surface.

A semiconductor package that includes a first redistribution structure; a logic die on the first redistribution structure; a plurality of conductive posts on the first redistribution structure, the plurality of conductive posts being laterally next to the logic die; a second redistribution structure on the logic die and the plurality of conductive posts; and a memory package on the second redistribution structure. The memory package includes a plurality of first bumps; a plurality of second bumps laterally next to the plurality of first bumps; an interposer on the plurality of first bumps, the interposer defining a through opening through the interposer; a heat dissipating structure on the plurality of second bumps, the heat dissipating structure being in the through opening; and a memory structure on the interposer, the memory structure being laterally next to the heat dissipating structure.

An integrated circuit package and the method of forming the same are provided. The integrated circuit package may include an integrated circuit die and a dielectric material on sidewalls of the integrated circuit die. The integrated circuit die may include a substrate, a protective structure in the substrate, an interconnect structure on the substrate, and a seal ring structure in the interconnect structure and in contact with the protective structure. The protective structure and the substrate may include a same semiconductor material, and the protective structure may include a first dopant and a second dopant different from the first dopant. The interconnect structure may include dielectric layers and conductive features in the dielectric layers. The seal ring structure may encircle the conductive features of the interconnect structure in a top-down view.