A semiconductor package is provided. The semiconductor package includes a substrate, a die, and a molding compound. The die is mounted on the substrate. The molding compound is disposed on the substrate and surrounds the die. The molding compound includes a top surface and a first upper surface lower than the top surface. The die is exposed from the molding compound. The first upper surface of the molding compound is flush with a top surface of the die.

A semiconductor circuit, including a plurality of first devices and a plurality of second devices provided on the front surface of the main board, wherein each of the first device and the second device has a plurality of electrodes including a first main electrode and a second main electrode arranged on an upper surface, and the first main electrode and the second main electrode are connected to the front surface of the main board; each of the first devices has a first end side facing the second device; each of the second devices has a second end side facing the first device; a whole region between the first main electrode and the first end side in the first direction is a first region; and a whole region between the second main electrode and the second end side in the first direction is a second region.

A semiconductor processing apparatus includes a supporting platform configured to support a wafer stack structure comprising a first wafer bonded over a second wafer, and an injection device movably disposed above the supporting platform. The injection device includes an edge detector configured to locate a beveled edge between the first wafer and the second wafer, and a plasma injector coupled to the edge detector and configured to perform a plasma treatment over the beveled edge between the first wafer and the second wafer.

A package and a manufacturing method for the package are provided. The package includes a semiconductor die, an insulating encapsulant and a redistribution structure. The redistribution structure comprises a dielectric layer and a stacked via structure embedded in the dielectric layer. The stacked via structure comprises a first via plug, a first diffusion layer including first dopants, a second via plug, and a second diffusion layer including second dopants. The first via plug includes the first dopants dispersed within a first metal material of the first via plug, and the second via plug includes the second dopants dispersed within a second metal material of the second via plug.

Disclosed herein are chip packages having stiffeners and methods for making the same. In one example, a chip package includes a substrate, an integrated circuit (IC) die complex, a spacer, and a stiffener. The IC die complex is mechanically connected to the substrate. The spacer is formed on a top surface of the substrate outward of the IC die complex. The stiffener includes a ring base and a flange that extends inward from the ring base. The ring base has a bottom surface that is attached to the top surface of the substrate. The flange has a bottom surface attached to the top surface of the spacer. The attachment to the stiffener at inner and outer locations provides enhanced resistance to warpage.

A semiconductor device having one or more tiered pillars and methods of manufacturing such a semiconductor device are disclosed. The semiconductor device may include redistribution layers, a semiconductor die, and a plurality of interconnection structures that operatively couple a bottom surface of the semiconductor die to the redistribution layers. The semiconductor device may further include one or more conductive pillars about a periphery of the semiconductor die. The one or more conductive pillars may be electrically connected to the redistribution layers and may each comprise a plurality of stacked tiers.

A package structure includes a substrate, multiple memory chips, and at least one bridge chip. The memory chips are dispersedly disposed in the substrate. The at least one bridge chip is disposed on the substrate, and the memory chips are electrically connected to each other through the at least one bridge chip.

A semiconductor device (e.g., a System on Integrated Chip (SoIC) device) is formed by vertically integrating (e.g., bonding) semiconductor dies, where each of the semiconductor dies has a front-side interconnect structure and has a backside interconnect structure. A front-side to front-side bonding process is used to bond the integrated semiconductor dies, which reduces the lengths of the communication paths between the integrated semiconductor dies. The reduced lengths of the communication paths reduce the electrical resistance and the signal transmission delay of the communication paths, thus improving the processing speed of the semiconductor device and reducing power consumption. In addition, the bonding film stack around the bonding structure of the semiconductor dies can be formed thinner, which reduces the risk of metal cracking, thus improving device reliability and production yield.

A package structure is provided. The package structure includes a redistribution structure, and the redistribution structure has multiple insulating layers and multiple conductive features. The package structure also includes a semiconductor die over the redistribution structure and a protective layer partially or completely surrounding the semiconductor die. The package structure further includes a conductive bump over the redistribution structure. The protective layer surrounds a lower portion of the conductive bump, and an upper portion of the conductive bump protrudes from a surface of the protective layer. The upper portion of the conductive bump has a first curved sidewall curved outwards, the lower portion has a second curved sidewall, and the first curved sidewall has a different curvature than that of the second curved sidewall. The first curved sidewall, the second curved sidewall, and the surface of the protective layer meet together.

A redistribution layer is formed on a carrier wafer. A cavity is formed within the redistribution layer. An electro-optical die is flip-chip connected to the redistribution layer. A plurality of optical fiber alignment structures within the electro-optical die is positioned over and exposed to the cavity. Mold compound material is disposed over the redistribution layer and the electro-optical die. A residual kerf region of the electro-optical die interfaces with the redistribution layer to prevent mold compound material from entering into the optical fiber alignment structures and the cavity. The carrier wafer is removed from the redistribution layer. The redistribution layer and the mold compound material are cut to obtain an electro-optical chip package that includes the electro-optical die. The cutting removes the residual kerf region from the electro-optical die to expose the plurality of optical fiber alignment structures and the cavity at an edge of the electro-optical chip package.